期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
A New Structure IGBT with High Performance 被引量:2
1
作者 程序 吴郁 +4 位作者 刘兴明 王哲 亢宝位 李俊峰 韩郑生 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2003年第6期586-591,共6页
A new structure IGBT is proposed for reducing the power dissipation.It features a composite voltage-sustaining layer which includes a n-type buffer layer formed by ultra-deep diffusion and a transparent backside emitt... A new structure IGBT is proposed for reducing the power dissipation.It features a composite voltage-sustaining layer which includes a n-type buffer layer formed by ultra-deep diffusion and a transparent backside emitter formed by boron implantation.Working in a deep punch-through state during its normal operating condition,it still possesses all the characteristics of the robust non-punch-through IGBT (NPT-IGBT).With a chip-thickness thinner than that of the NPT-IGBT,the new structure presents a better trade-off relationship between the on-state voltage-drop and the turn-off loss.Experimental results show that the power loss of the new structure IGBT is 40% lower than that of the NPT-IGBT. 展开更多
关键词 buffer layer deep punch through NPT-IGBT transparent emitter
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部