We investigated the effect of grain boundary structures on the trapping strength of HeN（N is the number of helium atoms） defects in the grain boundaries of nickel. The results suggest that the binding energy of an i...We investigated the effect of grain boundary structures on the trapping strength of HeN（N is the number of helium atoms） defects in the grain boundaries of nickel. The results suggest that the binding energy of an interstitial helium atom to the grain boundary plane is the strongest among all sites around the plane. The He_N defect is much more stable in nickel bulk than in the grain boundary plane. Besides, the binding energy of an interstitial helium atom to a vacancy is stronger than that to a grain boundary plane. The binding strength between the grain boundary and the HeN defect increases with the defect size. Moreover, the binding strength of the HeN defect to the Σ3（112）[110] grain boundary becomes much weaker than that to other grain boundaries as the defect size increases.展开更多
基金Project supported by the Program of International S&T Cooperation,China(Grant No.2014DFG60230)the National Basic Research Program of China(Grant No.2010CB934504)+2 种基金Strategically Leading Program of the Chinese Academy of Sciences(Grant No.XDA02040100)the Shanghai Municipal Science and Technology Commission,China(Grant No.13ZR1448000)the National Natural Science Foundation of China(Grant Nos.91326105 and 21306220)
文摘We investigated the effect of grain boundary structures on the trapping strength of HeN（N is the number of helium atoms） defects in the grain boundaries of nickel. The results suggest that the binding energy of an interstitial helium atom to the grain boundary plane is the strongest among all sites around the plane. The He_N defect is much more stable in nickel bulk than in the grain boundary plane. Besides, the binding energy of an interstitial helium atom to a vacancy is stronger than that to a grain boundary plane. The binding strength between the grain boundary and the HeN defect increases with the defect size. Moreover, the binding strength of the HeN defect to the Σ3（112）[110] grain boundary becomes much weaker than that to other grain boundaries as the defect size increases.
