Fault-Tolerant Resolvability of Certain Crystal Structures

An ordered set W of vertices of a graph G is called a resolving set, if all the vertices of G are uniquely determined by the vector of distances to the vertices in W. The metric dimension of G is the minimum cardinality of a resolving set of G. A resolving set W for G is fault-tolerant if W\{v} is also a resolving set, for each v in W, and the fault-tolerant metric dimension of G is the minimum cardinality of such a set. In this paper we determine the metric dimension and fault-tolerant metric dimension problems for the graphs of certain crystal structures.

A review on emerging materials with focus on BiI_(3) for room-temperature semiconductor radiation detectors

Purpose Considerable advances in the fundamental knowledge and applications of radiation science have led to significant progress and development of room-temperature semiconductor radiation detectors(RTSD).The RTSDs technologies are continuously evolving with accelerated research and material engineering in the last decade.Significant scientific and technological advancements have led to development of high-performance radiation detectors with high signal-to-noise ratio(SNR),better sensitivity,faster response and higher-resolution with capability of desired room-temperature operation.This paper is a review on emerging semiconductor radiation detector materials with a deeper insight into the prospective role of Bismuth tri-iodide(BiI_(3))for room-temperature radiation detectors.Methods An introduction of the state of art of most developed semiconductor materials,i.e.,cadmium telluride(CdTe),mercury iodide(HgI_(2)),lead iodide(PbI_(2)),etc.,and a critical examination of properties,shortcomings and challenges related to their synthesis have been elaborated.Polymer-semiconductor composites with desirable properties and their integration into detector devices is also presented.Subsequent sections discuss the role of BiI_(3) as an emerging radiation detector material for room-temperature operation with an in-depth discussion on the role of defects in charge transportation and electrode configuration.Furthermore,the current challenges along with the future prospects of these materials for radiation detection to promote continuous innovation and practical applications are also elaborated.Conclusion The comprehensive review on latest developments in room-temperature radiation detector materials is expected to help establish a technological roadmap for the synthesis,fabrication and commercialization of novel materials for development of efficient radiation detectors.

Porous N-doped-carbon coated CoSe2 anchored on carbon cloth as 3D photocathode for dye-sensitized solar cell with efficiency and stability outperforming Pt

Photocathode with superior catalytic activity,long-term stability,and fast mass/electron transfer is highly desirable but challenging for dye-sensitized solar cell(DSC).Herein,the ZIF-67 grown on carbon cloth is successfully transformed into CoSe2 embedded in N-doped carb on nano cage(CoSe2/N-C)via a growth-carbonization-selenization process.The carb on cloth supported CoSe2/N-C,as photocathode of DSC,demonstrates a good long-term stability and high photovoltaic efficiency(8.40%),outperforming Pt.The good efficiency can be attributed to the high catalytic activity of CoSe2,fast mass tran sfer of porous three-dimensi on al(3D)structure,and good electr on transport derived from the intimate con tact between CoSe2 and highly conductive carb on cloth.The high stability would be ascribed to N-doped carbon coating that perfectly prevents CoSe2 from decomposition.This work will pave the way to develop highly efficient and stable Pt-free photocathode for DSC.