Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance

An analytical model for a novel triple reduced surface field（RESURF） silicon-on-insulator（SOI） lateral doublediffused metal–oxide–semiconductor（LDMOS） field effect transistor with n-type top（N-top） layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional（2D） Poisson＇s equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage（BV） is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer（Q_（ntop）） is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.

Controlling the Goos-H?nchen Shift via Incoherent Pumping Field and Electron Tunneling in the Triple Coupled InGaAs/GaAs Quantum Dots

We study the controlling of the Goos-Hanchen （GH） shifts in reflected and transmitted light beams in the triple coupled InGaAs/GaAs quantum dot （QD） nanostructures with electron tunneling and incoherent pumping field. It is shown that the lateral shift can become either large negative or large positive, which can be controlled by the electron tunneling and the rate of incoherent pump field in different incident angles. It is also demonstrated that the properties of the OH shifts are strongly dependent on the probe absorption beam of the intracavity medium due to the switching from superluminal light propagation to subluminal behavior or vice versa. Our suggested system can be considered as a new theoretical method for developing a new nano-optoelectronic sensor.

Left-Handedness with Three Zero-Absorption Windows Tuned by the Incoherent Pumping Field and Inter-Dot Tunnelings in a GaAs/AlGaAs Triple Quantum Dots System

Left-handedness with three zero-absorption windows is achieved in a triple-quantum-dot system. With the typ- ical parameters of a GaAs/AlGaAs heterostructure, the simultaneous negative relative electric permittivity and magnetic permeability are obtained by the adjustable incoherent pumping field and two inter-dot tunnelings. Furthermore, three zero-absorption windows in the left-handedness frequency bands are observed. The left- handedness with zero-absorption in the solid state heterostrueture may solve the challenges not only in the left-handed materials achieved by the photonic resonant scheme but also in the application of negative refractive materials with a large amount of absorption.