This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack chan...This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack channel(TLSC)(Si-SiGe-Si),(b)double layer stack channel(DLSC)(SiGe-Si),(c)single layer channel(SLC)(S_(i)).The I−V characteristics,subthreshold swing(SS),drain-induced barrier lowering(DIBL),threshold voltage(V_(t)),drain current(ION),OFF current(IOFF),and ON-OFF current ratio(ION/IOFF)are observed for the structures at a 20 nm gate length.It is seen that TLSC provides 21.3%and 14.3%more ON current than DLSC and SLC,respectively.The paper also explores the analog and RF factors such as input transconductance(g_(m)),output transconductance(gds),gain(gm/gds),transconductance generation factor(TGF),cut-off frequency(f_(T)),maximum oscillation frequency(f_(max)),gain frequency product(GFP)and linearity performance parameters such as second and third-order harmonics(g_(m2),g_(m3)),voltage intercept points(VIP_(2),VIP_(3))and 1-dB compression points for the three structures.The results show that the TLSC has a high analog performance due to more gm and provides 16.3%,48.4%more gain than SLC and DLSC,respectively and it also provides better linearity.All the results are obtained using the VisualTCAD tool.展开更多
A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be a...A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be accurately removed in each cycleby utilizing a self-limited oxidation with 40%HNO_(3)solution in 40 s and oxidation removal can be achieved with 1%HFsolution in 10 s.As a result,after the dummy gate removal,the fin width of Si_(0.7)Ge_(0.3)can be narrowed from 20 nm to 8 nmby utilizing 10 cycles of this wet treatment process.Compared with the conventional Si_(0.7)Ge_(0.3)FinFET under a similarprocess,the narrowed Si_(0.7)Ge_(0.3)channel FinFET can realize a strong gate control capability by using this newly developedwet treatment process,because its subthreshold slope can be reduced by 24%,improving from 87 mV/dec to 64 mV/dec.展开更多
金属功函数波动作为器件制造过程中的主要工艺波动源之一,其波动变化对器件电学特性有极大的影响。本文提出一种简便、快速预测半导体场效应管金属功函数波动效应的方法,并将其与商业软件中计算功函数波动的统计阻抗场法进行对比分析。...金属功函数波动作为器件制造过程中的主要工艺波动源之一,其波动变化对器件电学特性有极大的影响。本文提出一种简便、快速预测半导体场效应管金属功函数波动效应的方法,并将其与商业软件中计算功函数波动的统计阻抗场法进行对比分析。参考IBM公司发布的14 nm SOI FinFET结构建立FinFET器件仿真模型并与实验数据对比验证后,引入金属功函数波动,分别用统计阻抗场法与本文提出的快速预测方法计算得到对应随机波动下模型的阈值电压V_(th)、关断电流I_(off)、工作电流I_(on)等电学特性参数的随机分布及这些参数结果的期望值、标准差、极差等统计参数,通过两者结果对比验证了快速预测方法的准确性。展开更多
文摘This manuscript explores the behavior of a junctionless tri-gate FinFET at the nano-scale region using SiGe material for the channel.For the analysis,three different channel structures are used:(a)tri-layer stack channel(TLSC)(Si-SiGe-Si),(b)double layer stack channel(DLSC)(SiGe-Si),(c)single layer channel(SLC)(S_(i)).The I−V characteristics,subthreshold swing(SS),drain-induced barrier lowering(DIBL),threshold voltage(V_(t)),drain current(ION),OFF current(IOFF),and ON-OFF current ratio(ION/IOFF)are observed for the structures at a 20 nm gate length.It is seen that TLSC provides 21.3%and 14.3%more ON current than DLSC and SLC,respectively.The paper also explores the analog and RF factors such as input transconductance(g_(m)),output transconductance(gds),gain(gm/gds),transconductance generation factor(TGF),cut-off frequency(f_(T)),maximum oscillation frequency(f_(max)),gain frequency product(GFP)and linearity performance parameters such as second and third-order harmonics(g_(m2),g_(m3)),voltage intercept points(VIP_(2),VIP_(3))and 1-dB compression points for the three structures.The results show that the TLSC has a high analog performance due to more gm and provides 16.3%,48.4%more gain than SLC and DLSC,respectively and it also provides better linearity.All the results are obtained using the VisualTCAD tool.
基金Project supported by the Beijing Municipal Natural Science Foundation,China(Grant No.4202078).
文摘A narrowed Si_(0.7)Ge_(0.3)channel fin field-effect transistor(FinFET)device is demonstrated in detail by using an accuratecyclic wet treatment process.The Si_(0.7)Ge_(0.3)fin/per side of 0.63 nm in thickness can be accurately removed in each cycleby utilizing a self-limited oxidation with 40%HNO_(3)solution in 40 s and oxidation removal can be achieved with 1%HFsolution in 10 s.As a result,after the dummy gate removal,the fin width of Si_(0.7)Ge_(0.3)can be narrowed from 20 nm to 8 nmby utilizing 10 cycles of this wet treatment process.Compared with the conventional Si_(0.7)Ge_(0.3)FinFET under a similarprocess,the narrowed Si_(0.7)Ge_(0.3)channel FinFET can realize a strong gate control capability by using this newly developedwet treatment process,because its subthreshold slope can be reduced by 24%,improving from 87 mV/dec to 64 mV/dec.
文摘金属功函数波动作为器件制造过程中的主要工艺波动源之一,其波动变化对器件电学特性有极大的影响。本文提出一种简便、快速预测半导体场效应管金属功函数波动效应的方法,并将其与商业软件中计算功函数波动的统计阻抗场法进行对比分析。参考IBM公司发布的14 nm SOI FinFET结构建立FinFET器件仿真模型并与实验数据对比验证后,引入金属功函数波动,分别用统计阻抗场法与本文提出的快速预测方法计算得到对应随机波动下模型的阈值电压V_(th)、关断电流I_(off)、工作电流I_(on)等电学特性参数的随机分布及这些参数结果的期望值、标准差、极差等统计参数,通过两者结果对比验证了快速预测方法的准确性。
