The optical properties of N,N’-bis (Inaphthyl)N,N’-diphenyl-1,1’-biphenyl-4,4’-diamine (NPB) and tris (8-hydroxyquinolinato) aluminum (Alq3) organic materials used as hole transport and electron transport layers i...The optical properties of N,N’-bis (Inaphthyl)N,N’-diphenyl-1,1’-biphenyl-4,4’-diamine (NPB) and tris (8-hydroxyquinolinato) aluminum (Alq3) organic materials used as hole transport and electron transport layers in organic light-emitting devices (OLED) have been investigated. The NPB and Alq3 layers were prepared using thermal evaporation method. The results show that the energy band gap of Alq3 is thickness independence while the energy band gap of NPB decreases with the increasing of sample thickness. For the case of photoluminescence the Alq3 with thickness of 84 nm shows the highest relative intensity peak at 510 nm.展开更多
A novel solid state cathodoluminescence(SSCL) device(the device has a structure of ITO/SiO2/Alq3/SiO2/Al) is fabricated using organic materials as the fluorescent film sandwiched between two SiO2 layers.When alternati...A novel solid state cathodoluminescence(SSCL) device(the device has a structure of ITO/SiO2/Alq3/SiO2/Al) is fabricated using organic materials as the fluorescent film sandwiched between two SiO2 layers.When alternating current(AC) voltage is applied to this device,uniform emissions are observed.When the voltage is 50 V,a longer wavelength emission(522 nm) is obtained,but the shorter wavelength emission(465 nm) is dominant when the voltage is 76 V.The origins of these emissions are discussed.The interface formed between SiO2 and tris-(8-hydroquinoline) aluminum(Alq3) of SSCL device was investigated by using X-ray photoelectron spectroscopy(XPS).Analyses of the XPS spectra reveal a deep diffusion of the indium into the interface.On the other hand,the interaction between indium and Alq3 occurs at the interface and results in the formation of a carbon-oxygen-metal(In or Al) complex in the contact region.This effect causes a luminescence quenching in the SSCL device.展开更多
文摘The optical properties of N,N’-bis (Inaphthyl)N,N’-diphenyl-1,1’-biphenyl-4,4’-diamine (NPB) and tris (8-hydroxyquinolinato) aluminum (Alq3) organic materials used as hole transport and electron transport layers in organic light-emitting devices (OLED) have been investigated. The NPB and Alq3 layers were prepared using thermal evaporation method. The results show that the energy band gap of Alq3 is thickness independence while the energy band gap of NPB decreases with the increasing of sample thickness. For the case of photoluminescence the Alq3 with thickness of 84 nm shows the highest relative intensity peak at 510 nm.
基金This work is supported by the National Natural Science Foundation of China （No. 10274072, 20240430654）the Specialized Research Fund for the Doctoral Program of Higher Education of China （No. 20030335017）.
基金supported by the National Natural Science Foundation of China (Grant No. 60806047)the Natural Science Foundation Project of CQ CSTC (Grant No. 2009BB2237)+1 种基金the Science and Technology of Chongqing Municipal Education Commission (Grant No. KJ080816)the Natural Science Foundation of Chongqing Normal University (Grant Nos. 07XLB015 and 08XLS12)
文摘A novel solid state cathodoluminescence(SSCL) device(the device has a structure of ITO/SiO2/Alq3/SiO2/Al) is fabricated using organic materials as the fluorescent film sandwiched between two SiO2 layers.When alternating current(AC) voltage is applied to this device,uniform emissions are observed.When the voltage is 50 V,a longer wavelength emission(522 nm) is obtained,but the shorter wavelength emission(465 nm) is dominant when the voltage is 76 V.The origins of these emissions are discussed.The interface formed between SiO2 and tris-(8-hydroquinoline) aluminum(Alq3) of SSCL device was investigated by using X-ray photoelectron spectroscopy(XPS).Analyses of the XPS spectra reveal a deep diffusion of the indium into the interface.On the other hand,the interaction between indium and Alq3 occurs at the interface and results in the formation of a carbon-oxygen-metal(In or Al) complex in the contact region.This effect causes a luminescence quenching in the SSCL device.
