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Structural and optical properties of tungsten-doped vanadium dioxide films 被引量:1
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作者 王学进 刘玉颖 +3 位作者 李德华 冯宝华 何志巍 祁铮 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期491-493,共3页
Thin films of tungsten (W)-doped thermochromic vanadium dioxide (VO2) were deposited onto soda-lime glass and fused silica by radio frequency magnetron sputtering. The doped VO2 films were characterized by X-ray d... Thin films of tungsten (W)-doped thermochromic vanadium dioxide (VO2) were deposited onto soda-lime glass and fused silica by radio frequency magnetron sputtering. The doped VO2 films were characterized by X-ray diffraction, optical transmittance measurement, and near field optical microscopy with Raman spectroscopy. X-ray diffraction patterns show that the (011) peak of W-doped thermochromic VO2 film shifts to a lower diffraction angle with the increase of W concentration. The optical measurements indicated that the transmittance change (AT) at wavelength of 2500 nm drops from 65% (AT at 35 ℃ and 80 ℃ for undoped VO2 film) to 38% (AT at 30 ℃ and 42 ℃ for the doped VO2 film). At the same time, phase transition temperature drops from 65 ℃ to room temperature or lower with the increase of W concentration. Near field optical microscopy image shows that the surface of W-doped VO2 film is smooth. Raman results show that the main Raman modes of W-doped VO2 are centered at 614 cm 1, the same as that of undoped VO2, suggesting no Raman mode changes for lightly W-doped VO2 at room temperature, due to no phase transition appearing under this condition. 展开更多
关键词 tungsten-doped vanadium dioxide THERMOCHROMIC magnetron sputtering
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Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 被引量:5
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作者 LIANG Jiran HU Ming +4 位作者 KAN Qiang LIANG Xiuqin WANG Xiaodong LI Guike CHEN Hongda 《Rare Metals》 SCIE EI CAS CSCD 2011年第3期247-251,共5页
Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray diffraction (XRD), atom force microscopy (AFM), and Fourier transform infrared s... Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. X-ray diffraction (XRD), atom force microscopy (AFM), and Fourier transform infrared spectrum (FTIR) were employed to measure the crystalline structure, surface morphology, and infrared optical transmittance. The phase transition properties were characterized by transmittance. The results show that the annealed vanadium oxide thin film is composed of monoclinic VO2, with preferred orientation of (011). The maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80 C. The reversible changes in optical transmittance against temperature were observed. The change rate of transmittance at short wavelength is higher than that at long wavelength at the same temperature across semiconductor-metal phase transition. This phenomenon was discussed using diffraction effect. 展开更多
关键词 vanadium dioxide infrared transition diffraction effect dual ion beam sputtering ANNEALING
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Synthesis and Characterization of Tungsten Doped Vanadium Dioxide Nanopowders by Thermolysis 被引量:3
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作者 Zi Fei PENG Wei JIANG 《Chinese Chemical Letters》 SCIE CAS CSCD 2006年第10期1417-1420,共4页
As far as we known, with white powdery tungstic acid (WPTA) used as the dopant for the first time, tungsten-doped vanadium dioxide (VO2) nanopowders were synthesized through thermolysis at low temperature. The pro... As far as we known, with white powdery tungstic acid (WPTA) used as the dopant for the first time, tungsten-doped vanadium dioxide (VO2) nanopowders were synthesized through thermolysis at low temperature. The products were characterized by XRD, TEM and DSC. When WPTA was added into V205 (with W/V = 2 atom %), the phase transition temperature (Tc) of VO2 decreased markedly from 67.15℃ to 26.46℃ after annealing at 500℃. Such a low Tc is beneficial to the application and development of smart windows materials. 展开更多
关键词 vanadium dioxide white powdery tungstic acid phase transition THERMOLYSIS
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Surface oxidation of vanadium dioxide films prepared by radio frequency magnetron sputtering 被引量:2
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作者 王学进 梁春军 +6 位作者 管康萍 李德华 聂玉昕 朱世秋 黄峰 张葳葳 成正维 《Chinese Physics B》 SCIE EI CAS CSCD 2008年第9期3512-3515,共4页
This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering, and then aged under circumstance for years. Samples were chara... This paper reports that the thermochromic vanadium dioxide films were deposited on various transparent substrates by radio frequency magnetron sputtering, and then aged under circumstance for years. Samples were characterized with several different techniques such as x-ray diffraction, x-ray photoelectron spectroscopy, and Raman, when they were fresh from sputter chamber and aged after years, respectively, in order to determine their structure and composition. It finds that a small amount of sodium occurred on the surface of vanadium dioxide films, which was probably due to sodium ion diffusion from soda-lime glass when sputtering was performed at high substrate temperature. It also finds that aging for years significantly affected the nonstoichiometry of vanadium dioxide films, thus inducing much change in Raman modes. 展开更多
关键词 surface oxidation vanadium dioxide FILMS magnetron sputtering
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Wideband switchable dual-functional terahertz polarization converter based on vanadium dioxide-assisted metasurface 被引量:1
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作者 De-Xian Yan Qin-Yin Feng +4 位作者 Zi-Wei Yuan Miao Meng Xiang-Jun Li Guo-Hua Qiu Ji-Ning Li 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第1期324-331,共8页
The terahertz technology has attracted considerable attention because of its potential applications in various fields.However,the research of functional devices,including polarization converters,remains a major demand... The terahertz technology has attracted considerable attention because of its potential applications in various fields.However,the research of functional devices,including polarization converters,remains a major demand for practical applications.In this work,a reflective dual-functional terahertz metadevice is presented,which combines two different polarization conversions through using a switchable metasurface.Different functions can be achieved because of the insulator-to-metal transition of vanadium dioxide(VO_(2)).At room temperature,the metadevice can be regarded as a linear-to-linear polarization convertor containing a gold circular split-ring resonator(CSRR),first polyimide(PI)spacer,continuous VO_(2) film,second PI spacer,and gold substrate.The converter possesses a polarization conversion ratio higher than 0.9 and a bandwidth ratio of 81%in a range from 0.912 THz to 2.146 THz.When the temperature is above the insulator-to-metal transition temperature(approximately 68℃)and VO_(2) becomes a metal,the metasurface transforms into a wideband linear-to-circular polarization converter composed of the gold CSRR,first PI layer,and continuous VO_(2) film.The ellipticity is close to-1,while the axis ratio is lower than 3 dB in a range of 1.07 THz-1.67 THz.The metadevice also achieves a large angle tolerance and large manufacturing tolerance. 展开更多
关键词 metasurface polarization conversion vanadium dioxide dual-functional
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Multi-functional vanadium dioxide integrated metamaterial for terahertz wave manipulation 被引量:1
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作者 Jian-Xing Zhao Jian-Lin Song +3 位作者 Yao Zhou Rui-Long Zhao Yi-Chao Liu Jian-Hong Zhou 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第9期331-336,共6页
We proposed a vanadium dioxide(VO2)-integrated multi-functional metamaterial structure that consists of three metallic grating layers and two VO2 films separated by SiO2 dielectric spacers.The proposed structure can b... We proposed a vanadium dioxide(VO2)-integrated multi-functional metamaterial structure that consists of three metallic grating layers and two VO2 films separated by SiO2 dielectric spacers.The proposed structure can be flexibly switched among three states by adjusting temperature,incident direction,and polarization.In state 1,the incident wave is strongly transmitted and perfectly converted to its orthogonal polarization state.In state 2,the incident wave is perfectly absorbed.In state 3,incident wave is totally reflected back.The working frequency of the multi-functional metamaterial can be arbitrarily tuned within a broad pass band.We believe that our findings are beneficial in designing temperature-controlled metadevices. 展开更多
关键词 METAMATERIAL vanadium dioxide multi-functionality
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Terahertz Metamaterial Modulator Based on Vanadium Dioxide
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作者 Ji-Ning Li Wei Li Sheng-Jiang Chang 《Journal of Electronic Science and Technology》 CAS 2014年第1期44-48,共5页
We present a design of terahertz modulator based on metamaterial absorber structure withvanadium dioxide (VO2), which can be controlled by optical-pumping or temperature variation. With the state change of VO2 from ... We present a design of terahertz modulator based on metamaterial absorber structure withvanadium dioxide (VO2), which can be controlled by optical-pumping or temperature variation. With the state change of VO2 from an insulator to a metal, the absorption has an abrupt increase from zero to 88.5%. In particular, the VO2 layer here is used to not only provide the modulating character, but also replace the metal ground plane to join the resonance operating as a metamaterial absorber. This work demonstrates a feasibility of VO2 in metamaterial perfect absorber, and exhibits potential applications in controllable terahertz devices. 展开更多
关键词 ABSORBER METAMATERIALS modulator terahertz vanadium dioxide.
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Dynamically Tunable Perfect Absorbers Utilizing Hexagonal Aluminum Nano-Disk Array Cooperated with Vanadium Dioxide
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作者 Peng Zhou Gai-Ge Zheng +2 位作者 Yun-Yun Chen Feng-Lin Xian Lin-Hua xu 《Chinese Physics Letters》 SCIE CAS CSCD 2019年第1期19-23,共5页
A tunable perfect absorber composed of hexagonal-arranged aluminum nano-disk array embedded in the vanadium dioxide(VO_2) film is proposed. The aim is to achieve the tunability of resonance absorption peak in the visi... A tunable perfect absorber composed of hexagonal-arranged aluminum nano-disk array embedded in the vanadium dioxide(VO_2) film is proposed. The aim is to achieve the tunability of resonance absorption peak in the visible and near-infrared regimes. Numerical results reveal that the absorption peak achieves a large tunability of 76.6% while VO_2 undergoes a structural transition from insulator phase to metallic phase. By optimizing the structural parameters, an average absorption of 95% is achieved from 1242 to 1815 nm at the metallic phase state. In addition, the near unity absorption can be fulfilled in a wide range of incident angle(0°–60°) and under all polarization conditions. The method and results presented here would be beneficial for the design of active optoelectronic devices. 展开更多
关键词 vanadium dioxide HEXAGONAL ALUMINUM nanodisc array ABSORBENT
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Manipulation of Terahertz Radiation Using Vanadium Dioxide
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作者 Qi-Ye Wen 《Journal of Electronic Science and Technology》 CAS 2014年第3期255-261,共7页
Vanadium dioxide (VO2) is a phase transition material which undergoes a reversible metal-insulator transition (MIT) when triggered by thermal, photo, electrical, and even stress. The huge conduction change of VO2 ... Vanadium dioxide (VO2) is a phase transition material which undergoes a reversible metal-insulator transition (MIT) when triggered by thermal, photo, electrical, and even stress. The huge conduction change of VO2 renders it a promising material for terahertz (THz) manipulation. In this paper, some interesting works concerning the growth and characteristics of the VO2 film are selectively reviewed. A switching of THz radiation by photo-driven VO2 film is demonstrated. Experiments indicate an ultrafast optical switching to THz transmission within 8 picoseconds, and a switching ratio reaches to over 80%during a wide frequency range from 0.3 THz to 2.5 THz. 展开更多
关键词 Active device phase transition terahertz(THz) vanadium dioxide
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Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film
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作者 Qing-Jian Lu Min Gao +3 位作者 Chang Lu Fei Long Tai-Song Pan Yuan Lin 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第9期419-423,共5页
Vanadium dioxide(VO_(2))is a strongly correlated material,and it has become known due to its sharp metal-insulator transition(MIT)near room temperature.Understanding the thermal properties and their change across MIT ... Vanadium dioxide(VO_(2))is a strongly correlated material,and it has become known due to its sharp metal-insulator transition(MIT)near room temperature.Understanding the thermal properties and their change across MIT of VO_(2)thin film is important for the applications of this material in various devices.Here,the changes in thermal conductivity of epitaxial and polycrystalline VO_(2)thin film across MIT are probed by the time-domain thermoreflectance(TDTR)method.The measurements are performed in a direct way devoid of deposition of any metal thermoreflectance layer on the VO_(2)film to attenuate the impact from extra thermal interfaces.It is demonstrated that the method is feasible for the VO_(2)films with thickness values larger than 100 nm and beyond the phase transition region.The observed reasonable thermal conductivity change rates across MIT of VO_(2)thin films with different crystal qualities are found to be correlated with the electrical conductivity change rate,which is different from the reported behavior of single crystal VO_(2)nanowires.The recovery of the relationship between thermal conductivity and electrical conductivity in VO_(2)film may be attributed to the increasing elastic electron scattering weight,caused by the defects in the film.This work demonstrates the possibility and limitation of investigating the thermal properties of VO_(2)thin films by the TDTR method without depositing any metal thermoreflectance layer. 展开更多
关键词 vanadium dioxide thin film thermal conductivity time-domain thermoreflectance
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Preparation of Vanadium Dioxide Films for Protection from High-energy Laser Hits
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作者 LIXiong-wei YIXin-jian 《Semiconductor Photonics and Technology》 CAS 2003年第1期46-49,共4页
Vanadium dioxide(VO 2)thin films are used for protection from high-energy laser hits due to their semiconductor-to-metal phase transition experienced during heating at temperature of approximately 68 ℃,which followed... Vanadium dioxide(VO 2)thin films are used for protection from high-energy laser hits due to their semiconductor-to-metal phase transition experienced during heating at temperature of approximately 68 ℃,which followed by a abrupt change of optical behavior, namely from transparent semiconductor state below 68 ℃ to highly reflective metallic state beyond 68 ℃.The preparation and properties of the films are described as well as the primary principle of the device for protection from high energy laser hits. An ion-beam-sputtering system is used to deposit VO 2 thin films.The technique is reactive ion beam sputtering of vanadium at temperature of 200 ℃ on Si, Ge and Si 3N 4 substrates in a well controlled atmosphere of argon with a partial pressure of O 2, followed by a post annealing at 400-550 ℃ with argon gas.The optical transmittance changes from 60% to 4% are obtained within the temperature range from 50 ℃ to 70 ℃. X-ray diffraction (XRD) shows that the films are of single-phase VO 2. 展开更多
关键词 vanadium dioxide ion beam sputtering ANNEALING phase transition laserprotection
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Structural Stability and Electronic Properties of the I41/amd Vanadium Dioxide
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作者 王成龙 刘光华 +1 位作者 陈颖 默广 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 2017年第7期1055-1062,共8页
By using LDA+U approach based on the density functional theory, the structural stability of I41/amd VO2 is investigated. According to the phonon dispersion and stability criteria, the I41/amd is suggested to be anoth... By using LDA+U approach based on the density functional theory, the structural stability of I41/amd VO2 is investigated. According to the phonon dispersion and stability criteria, the I41/amd is suggested to be another possible and stable structure for the VO2. Lattice parameters of the I41/amd VO2 are determined by geometry optimization. The energy band structure shows that the I41/amd VO2 should be a metal. Furthermore, the upper valence band has dominant 2p-orbital characters, but the lower conduction band shows distinctive 3d-orbital characters. Obvious hybridization between the O-2p and V-3d orbitals is observed. 展开更多
关键词 structural stability electronic properties vanadium dioxide
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二氧化钒发射率的调控方法与实践
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作者 曹传祥 张志强 +2 位作者 张良苗 陈长 高彦峰 《自然杂志》 CAS 2024年第1期50-62,共13页
二氧化钒(VO_(2))是一种常用的相变材料,它能在68℃附近可逆地改变光学、电学特性以响应外部温度刺激。自20世纪90年代以来,人们对VO_(2)光学特性进行了广泛的研究,并在紫外、可见和近红外区域的调制方面取得了重大进展,而室温黑体辐射... 二氧化钒(VO_(2))是一种常用的相变材料,它能在68℃附近可逆地改变光学、电学特性以响应外部温度刺激。自20世纪90年代以来,人们对VO_(2)光学特性进行了广泛的研究,并在紫外、可见和近红外区域的调制方面取得了重大进展,而室温黑体辐射所处的中远红外区能量只相当于太阳辐射的15%,因而获得的关注较少。然而随着研究的深入,研究者发现中远红外光区的长波辐射对热调控也具有至关重要的作用,甚至在太阳辐射较强的白天也是不容忽视的,因此有关VO_(2)发射率调控的研究受到越来越多的关注。文章聚焦VO2发射率调控的最新研究进展,着重介绍VO_(2)发射率的调控手段以及常温热辐射调控性能,并对其应用前景进行了展望。文章指出,VO_(2)发射率可以有效调控室温黑体辐射能量,通过新型结构如Fabry-Pérot谐振腔、超材料等与VO_(2)的有机结合,极大丰富了VO_(2)发射率的调控手段,展现出显著的调控效果,这对于实现具有更高节能效率的智能建筑、空间热管理以及红外伪装具有很大的潜力。 展开更多
关键词 二氧化钒 发射率 金属半导体相变 超材料
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频率可调谐的双偏振非对称传输器件
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作者 吕婷婷 刘东明 +1 位作者 付天舒 史金辉 《哈尔滨工程大学学报》 EI CAS CSCD 北大核心 2024年第2期415-422,共8页
为了研究太赫兹超构材料的可调谐非对称传输特性,本文基于相变原理提出一种类S型的双层结构,采用有限积分算法求解其偏振传输特性。利用温度调控二氧化钒的相变特性,实现了频率可调谐的双偏振非对称传输效应。在宽角度入射范围内,45... 为了研究太赫兹超构材料的可调谐非对称传输特性,本文基于相变原理提出一种类S型的双层结构,采用有限积分算法求解其偏振传输特性。利用温度调控二氧化钒的相变特性,实现了频率可调谐的双偏振非对称传输效应。在宽角度入射范围内,45°线偏振光的非对称传输特性保持着较高的工作效率,倾斜入射角为60°时,效率优于0.4,且绝缘态和金属态下的谐振频率几乎保持不变,谐振频率的可调谐度为16.3%。本文所提出的频率可调谐双偏振非对称传输器件在偏振调控、太赫兹通信和太赫兹芯片领域具有潜在的应用前景。 展开更多
关键词 超构材料 非对称传输 相变原理 二氧化钒 偏振调控 宽角度 频率可调谐 太赫兹
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基于金属-绝缘体相变材料的高钝感集成半导体桥芯片设计 被引量:2
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作者 程鹏涛 李慧 +4 位作者 骆建军 冯春阳 骆懿 任炜 梁小会 《火工品》 CAS CSCD 北大核心 2024年第2期1-7,共7页
为了提高半导体桥(SCB)火工品的安全性与可靠性,通过片上集成方式,在SCB两端并联金属-绝缘体相变材料VO_(2)对其进行分流防护。提出蛇形设计方法来降低VO_(2)薄膜在金属态的电阻值,使其与SCB阻值相匹配,测试了不同长宽比的VO_(2)薄膜及... 为了提高半导体桥(SCB)火工品的安全性与可靠性,通过片上集成方式,在SCB两端并联金属-绝缘体相变材料VO_(2)对其进行分流防护。提出蛇形设计方法来降低VO_(2)薄膜在金属态的电阻值,使其与SCB阻值相匹配,测试了不同长宽比的VO_(2)薄膜及相应的集成芯片在室温(25℃)至100℃范围内的电阻曲线,并对集成芯片及单独SCB在1A1W5min和1.5A2.25W5min安流试验中的传热过程进行了仿真。结果表明:蛇形设计可以有效降低VO_(2)薄膜电阻,其阻值与蛇形长宽比(Ws/L)成反比;VO_(2)薄膜能够对SCB起到一定的分流防护作用;集成芯片尺寸对安流试验热传导过程的平衡温度有一定影响;能够通过1.5 A安流试验的最大VO_(2)阻值为5Ω,这是下一步的设计目标。 展开更多
关键词 半导体桥(SCB) 二氧化钒(VO_(2)) 集成芯片 电阻 仿真
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低温相变V_(1-x)Mo_(x)O_(2-y)F_(y)(M)的固相合成及其光学隔热性能研究
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作者 刘党豪 孟晓荣 +4 位作者 张丽萍 吴娇 杜金晶 王斌 朱军 《功能材料》 CAS CSCD 北大核心 2024年第4期4127-4134,共8页
为解决低温热致相变性VO_(2)(M)智能窗材料实际应用对绿色节能生产技术的需求,借助偏心振动磨作为预处理分散设备,以V_(2)O_5和酸为原料,优化了固相法合成VO_(2)(M)的合成工艺,研究了Mo/F共掺型低温热致相变V_(1-x)Mo_(x)O_(2-y)F_(y)... 为解决低温热致相变性VO_(2)(M)智能窗材料实际应用对绿色节能生产技术的需求,借助偏心振动磨作为预处理分散设备,以V_(2)O_5和酸为原料,优化了固相法合成VO_(2)(M)的合成工艺,研究了Mo/F共掺型低温热致相变V_(1-x)Mo_(x)O_(2-y)F_(y)材料的制备工艺及Mo/F掺量对VO_(2)(M)的相变调控规律,评价了其光学及隔热性能。结果显示10 min/10.0 g原料的研磨时间和750℃的焙烧温度下可获得纯相VO_(2)(M)。以钼酸铵和氟化铵为Mo/F共掺原料,可获得相变温度随掺量呈规律性下降的低温热致相变V_(1-x)Mo_(x)O_(2-y)F_(y)(M),2%Mo和3%F掺杂后VO_(2)(M)相变温度降低至38.20℃。VO_(2)(M)和V_(1-x)Mo_(x)O_(2-y)F_(y)(M)粒径在300 nm左右,热致回宽(ΔT_c)介于之间6.1~7.9℃之间,显示了灵敏的热致相变能力。V_(1-x)Mo_(x)O_(2-y)F_(y)(M)/PVB复合薄膜可见光透过率48.7%,具有良好的隔热效果。 展开更多
关键词 偏心振动磨 Mo/F掺杂 二氧化钒 智能窗
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VO_(2)薄膜材料的变温光学性质及1550 nm激光防护性能研究
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作者 段嘉欣 江林 +6 位作者 郑国彬 丁长春 黄敬国 刘奕 高艳卿 周炜 黄志明 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2024年第2期150-157,共8页
具有半导体-金属态相变性质的二氧化钒材料可用于光电探测器的激光致盲防护。本文报道了基于磁控溅射法制备二氧化钒薄膜材料的结构、形貌特性,以及在不同温度下的光学性质。使用椭偏光谱法测量了20~100℃下可见-近红外波段二氧化钒材... 具有半导体-金属态相变性质的二氧化钒材料可用于光电探测器的激光致盲防护。本文报道了基于磁控溅射法制备二氧化钒薄膜材料的结构、形貌特性,以及在不同温度下的光学性质。使用椭偏光谱法测量了20~100℃下可见-近红外波段二氧化钒材料的椭偏参数,利用Gaussian、Lorentz模型获取了薄膜在相变前的光学性质,结合Drude模型拟合获取了材料在相变后的光学特性,获取了材料在300~1700 nm之间的变温折射率和消光系数等参数。变功率下1550 nm红外激光透射率的实验测试研究表明,VO_(2)薄膜样品的相变阈值功率为12 W/cm^(2),相变前后透射率由51%减小到15%~17%,开关率为69%。 展开更多
关键词 激光防护 二氧化钒薄膜 半导体-金属态相变 红外光学性质
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镁掺杂对二氧化钒薄膜光学性能的影响
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作者 赵鑫 康同同 +3 位作者 梁潇 邬春阳 周阳 秦俊 《表面技术》 EI CAS CSCD 北大核心 2024年第20期183-189,222,共8页
目的通过在二氧化钒薄膜中掺杂镁元素,实现高优值光学相变材料的制备。方法通过脉冲激光沉积方法在(0001)氧化铝单晶衬底上沉积二氧化钒外延薄膜,进一步采用交叉打靶的方法沉积不同镁掺杂浓度的二氧化钒外延薄膜;通过高分辨XRD和TEM表... 目的通过在二氧化钒薄膜中掺杂镁元素,实现高优值光学相变材料的制备。方法通过脉冲激光沉积方法在(0001)氧化铝单晶衬底上沉积二氧化钒外延薄膜,进一步采用交叉打靶的方法沉积不同镁掺杂浓度的二氧化钒外延薄膜;通过高分辨XRD和TEM表征镁掺杂外延二氧化钒薄膜的晶体结构和微观原子分布,采用XPS表征表面原子化学态,采用光谱椭偏仪表征不同镁掺杂浓度的二氧化钒外延薄膜的折射率和消光系数,并计算获得光学优值;最后构建第一性原理计算模型得到镁掺杂对二氧化钒薄膜光学优值影响的机理。结果制备出4种不同镁掺杂浓度的外延二氧化钒薄膜,分析了镁掺杂对薄膜相变前后的晶体取向和微观原子结构的影响,分析了薄膜中镁和钒元素的价态,分析了镁掺杂对单斜相和金红石相光学常数和光学优值的影响,从电子态密度分布分析了镁掺杂对提升材料光学优值的原因。结论镁掺杂二氧化钒与氧化铝衬底的外延关系为(020)_(VO_(2))//(0006)_(Al_(2)O_(3)),随着镁掺杂浓度的提高,金红石相二氧化钒薄膜的光学损耗降低,且中红外波段的光学优值提升。在11.9%(原子数分数)掺杂量时光学优值比未掺杂提高3.7倍。第一性原理计算表明,高光学优值是源于镁掺杂后导带周围电子态密度的局部化。 展开更多
关键词 二氧化钒 相变材料 镁掺杂 光学优值 脉冲激光沉积
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W-VO_(2)@SiO_(2)热致相变材料的制备及性能研究
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作者 吴娇 孟晓荣 +1 位作者 刘党豪 饶锐 《功能材料》 CAS CSCD 北大核心 2024年第8期8120-8127,共8页
为在降低VO_(2)(M)相变温度的同时提升其稳定性,以五氧化二钒(V_(2)O_(5))为钒源,水合肼(N_(2)H_(4)·H_(2)O)为还原剂,优化了VO_(2)(M)的水热合成工艺。通过W^(6+)掺杂和表面沉积SiO_(2),在保证相变性能的同时提升稳定性。结果表明... 为在降低VO_(2)(M)相变温度的同时提升其稳定性,以五氧化二钒(V_(2)O_(5))为钒源,水合肼(N_(2)H_(4)·H_(2)O)为还原剂,优化了VO_(2)(M)的水热合成工艺。通过W^(6+)掺杂和表面沉积SiO_(2),在保证相变性能的同时提升稳定性。结果表明:水热过程中存在VO_(2)(A)-VO_(2)(M)相互转变的过程,调整水热反应条件可得到结晶度良好,相变温度为66.3℃、热滞回宽为9.2℃的VO_(2)(M)。随着W掺杂量(原子分数表示)的增大,W-VO_(2)(M)@SiO_(2)的Tc降低,在W掺杂量为1.0%(原子分数)时ΔT=7.2℃;加速试验后W-VO_(2)@SiO_(2)复合材料的VO_(2)仍以V 4+存在,具有良好的热稳定性。 展开更多
关键词 二氧化钒 水热法 钨掺杂 二氧化硅 热稳定性
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3D花状VO_(2)(B)正极材料的制备与电化学性能研究
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作者 孔孟 郭攀 陈阳阳 《矿冶工程》 CAS 北大核心 2024年第4期42-46,53,共6页
以五氧化二钒和柠檬酸为原料,采用水热反应法制备了具有大比表面积和优异结构稳定性的3D花状VO_(2)(B)电极材料。采用X射线衍射、扫描电子显微镜、透射电子显微镜等对VO_(2)(B)晶体结构和形貌进行了表征,通过恒流充放电、循环伏安法等对... 以五氧化二钒和柠檬酸为原料,采用水热反应法制备了具有大比表面积和优异结构稳定性的3D花状VO_(2)(B)电极材料。采用X射线衍射、扫描电子显微镜、透射电子显微镜等对VO_(2)(B)晶体结构和形貌进行了表征,通过恒流充放电、循环伏安法等对VO_(2)(B)电极材料的电化学性能进行了测试。结果表明:电流密度0.1 A/g下,3D花状VO_(2)(B)电极材料的首次放电比容量达227 mAh/g;1 A/g高电流密度下,初始放电比容量仍达151 mAh/g,300次充放电循环后的容量保持率为79.6%,该电极材料表现出良好的倍率性能。 展开更多
关键词 锂离子电池 二氧化钒 正极材料 循环性能 3D花状结构 钒电极材料
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