Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.

Characteristics of a prototype CdZnTe detector

Cadmium zinc telluride(CZT)is a preferred material for X-ray and gamma-ray detector.Thanks to the relatively high atomic number,high density and wide band-gap,CZT detector possesses sharp energy resolution and high detection efficiency without cryogenic cooling.We have developed a CdZnTe detector with an energy resolution of 3.45%(FWHM)at 59.54 keV at room temperature,and it is used for X-ray fluorescence analysis.In this paper, leakage current,energy resolution and long term stability of the CZT detector are discussed.

Simulation of the anode structure for capacitive Frisch grid CdZnTe detectors

CdZnTe(CZT)capacitive Frisch grid detectors can achieve a higher detecting resolution.The anode structure might have an important role in improving the weighting potential distribution of the detectors.In this paper, four anode structures of capacitive Frisch grid structures have been analyzed with FE simulation,based on a 3-dimensional weighting potential analysis.The weighting potential distributions in modified anode devices(Model B, C and D)are optimized compared with a square device(Model A).In model C and D,the abrupt weighting potential can be well modified.However,with increased radius of the circular electrode in Model C the weighting potential platform away from the anode becomes higher and higher and in Model D,the weighting potential does not vary too much.

Research of CdZnTe detector based portable energy dispersive spectrometer

A kind of excellent CdZnTe crystal has been grown in Yinnel Tech, Inc. in recent years. Based on these CdZnTe crystals and some new techniques, a portable energy-dispersive spectrometer has been constructed which has yielded good results. CdZnTe detector has a 3% relative resolution in high-energy field and can detect gamma rays at room temperature. An integrated circuit based on preamplifier and shaping amplifier chips is connected to the detector. Voltage pulses are transformed into digital signals in MCA (multichannel analyzer) and are then transmitted to com- puter via USB bus. Data process algorithms are improved in this spectrometer. Fast Fourier transform (FFT) and nu- merical differentiation (ND) are used in energy peak’s searching program. Sampling-based correction technique is used in X-ray energy calibration. Modified Gaussian-Newton algorithm is a classical method to solve nonlinear curve fitting problems, and it is used to compute absolute intensity of each detected characteristic line.

Study of Chemical Etching and Chemo-Mechanical Polishing on CdZnTe Nuclear Detectors

Cadmium zinc telluride (CdZnTe) semiconductor has applications in the detection of X-rays and gamma-rays at room temperature without having to use a cooling system. Chemical etching and chemo-mechanical polishing are processes used to smoothen CdZnTe wafer during detector device fabrication. These processes reduce surface damages left after polishing the wafers. In this paper, we compare the effects of etching and chemo-mechanical polishing on CdZnTe nuclear detectors, using a solution of hydrogen bromide in hydrogen peroxide and ethylene glycol mixture. X-ray photoelectron spectroscopy (XPS) was used to monitor TeO2 on the wafer surfaces. Current-voltage and detector-response measurements were made to study the electrical properties and energy resolution. XPS results showed that the chemical etching process resulted in the formation of more TeO2 on the detector surfaces compared to chemo-mechanical polishing. The electrical resistivity of the detector is of the order of 1010 Ω-cm. The chemo-mechanical polishing process increased the leakage current more that chemical etching. For freshly treated surfaces, the etching process is more detrimental to the energy resolution compared to chemo-mechanically polishing.

Performance simulation and structure design of Binode CdZnTe gamma-ray detector

A new electrode structure CdZnTe(Cadmium Zinc Telluride) detector named Binode CdZnTe has been proposed in this paper.Together with the softwares of MAXWELL,GEANT4,and ROOT,the charge collection process and its gamma spectrum of the detector have been simulated and the detector structure has been optimized.In order to improve its performance further,Compton scattering effect correction has been used.The simulation results demonstrate that with refined design and Compton scattering effect correction,Binode CdZnTe detectors is capable of achieving 3.92%FWHM at 122 keV,and 1.27%FWHM at 662 keV.Compared with other single-polarity(electron-only) detector configurations,Binode CdZnTe detector offers a cost effective and simple structure alternative with comparable energy resolution.

Electrode Design of Cylindrical Coplanar-grid CdZnTe Detector by Finite Element Methods

Cylindrical coplanar-grid configurations,which offer a lot of advantages over established designs,can effectively overcome the problem of poor hole collection.Finite element analysis is utilized for simulating the potential distribution of the cylindrical coplanar-grid detector under different models by varying the widths of grid and pitch of electrodes. In addition, a modified grid pattern has been discussed to improve the weighting potential match between two grids. In this way, the geometry of electrodes for cylindrical coplanar-grid detectors is optimized.

Analog rise-time discriminator for CdZnTe detector

Due to variable time for charge collection,energy resolution of nuclear detectors declines,especially compound semiconductor detectors like cadmium zinc telluride(CdZnTe) detector.To solve this problem,an analog rise-time discriminator based on charge comparison principle is designed.The reference charge signal after attenuation is compared with the deconvoluted and delayed current signal.It is found that the amplitude of delayed current signal is higher than that of the reference charge signal when rise time of the input signal is shorter than the discrimination time,thus generating gating signal and triggering DMCA(digital multi-channel analyzer) to receive the total integral charge signal.When rise time of the input signal is longer than discrimination time,DMCA remains inactivated and the corresponding total integral charge signal is abandoned.Test results show that combination of the designed rise-time discriminator and DMCA can reduce hole tailing of CdZnTe detector significantly.Energy resolution of the system is 0.98%@662 keV,and it is still excellent under high counting rates.

Analysis of Te and TeO₂on CdZnTe Nuclear Detectors Treated with Hydrogen Bromide and Ammonium-Based Solutions

Surface defects caused during cutting and polishing in the fabrication of cadmium zinc telluride (CdZnTe) nuclear detectors limit their spectral performance. Chemical treatments are often used to remove surface damages and defects. In this paper, we present the analysis of Te and TeO2 species on the surfaces of CdZnTe nuclear detectors treated with hydrogen bromide and ammonium-based solutions. The CdZnTe wafers were chemo-mechanically polished in a mixture of hydrogen bromide in hydrogen peroxide and ethylene glycol, followed by a chemical passivation in a mixture of ammonium fluoride and hydrogen peroxide solution. X-ray photoelectron spectroscopy showed significant conversion of Te to TeO2, thus producing a more chemically stable surface. The resistivity of the CdZnTe samples is in the order of 1010 ohms-cm. The current for a given applied voltage increased following the passivation and decreased after a 3-hour period. Results from spectral response measurements showed that the 59.5-keV gamma-peak of Am-241 was stable under the same channel for the surface treatment processes.

Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector

The space charge accumulation in CdZnTe crystals seriously affects the performance of high-flux pulse detectors.The influence of sub-bandgap illumination on the space charge distribution and device performance in CdZnTe crystals were studied theoretically by Silvaco TCAD software simulation.The sub-bandgap illumination with a wavelength of 890 nm and intensity of 8×10−8 W/cm2 were used in the simulation to explore the space charge distribution and internal electric field distribution in CdZnTe crystals.The simulation results show that the deep level occupation faction is manipulated by the sub-bandgap illumination,thus space charge concentration can be reduced under the bias voltage of 500 V.A flat electric field distribution is obtained,which significantly improves the charge collection efficiency of the CdZnTe detector.Meanwhile,premised on the high resistivity of CdZnTe crystal,the space charge concentration in the crystal can be further reduced with the wavelength of 850 nm and intensity of 1×10−7 W/cm2 illumination.The electric field distribution is flatter and the carrier collection efficiency of the device can be improved more effectively.

Superior photovoltaics/optoelectronics of two-dimensional halide perovskites

Taking advantage of the excellent stability and photoelectric properties,two-dimensional(2D)organicinorganic halide perovskites have been widely researched and applied in optoelectronic and photovoltaic devices.The remarkable properties are attributed to the unique quantum well structures by intercalating large organic ammonium space layers.In this review,we first summarize the crystal structures and growth methods of 2D halide perovskite crystals.Then,the distinctive optical characteristics and enhanced stability under high humidity,phase stability,suppressed ion migration,and high formation energy,are discussed in detail.Furthermore,we discuss orientation control in 2D perovskite films.The applications of 2D perovskites in solar cells,photo detectors and X-ray detectors are discussed in detail.Finally,we propose an outlook and perspectives to overcome the present challenges and broaden this new class of perovskite materials with other 2D nanomaterials.

电极对CdZnTe光电探测器性能的影响

CdZnTe材料具有较宽的禁带宽度和化学稳定性,使其成为制备紫外光电探测器的理想材料.电极与CdZnTe材料之间良好的接触特性对制备高灵敏度和高稳定性的紫外探测器具有关键作用.制备了单电极Au/CdZnTe/Au探测器和复合电极Au/GaZnO(GZO)/CdZnTe/GZO/Au探测器,研究了不同电极对CdZnTe紫外光电探测器性能的影响.

Design of a Low-Noise Front-End Readout Circuit for CdZnTe Detectors

In this paper, the design of a novel low-noise front-end readout circuit for Cadmium zinc telluride (CdZnTe) X-ray and γ-ray detectors is described. The front-end readout circuits include the charge sensitive amplifier (CSA) and the CR-RC shaper is implemented in TSMC 0.35 μm mixed-signal CMOS technology. The die size of the prototype chip is 4.9 mm × 2.2 mm. The simulation results show that, the noise performance is 46 electrons + 10 electrons/pF, and power consumption is 1.65 mW per channel.

A test device for isotopic γ-ray imaging with CdZnTe detector

A test device for isotopic γ-ray imaging, which consists of an isotope γ-ray source, a CdZnTe γ-ray spec- trometer and other auxiliary equipment, is studied here. Compared with the conventional X-ray, the isotope γ-ray, which is utilized in this project, has its own advantages in imaging. Furthermore, with a room-temperature high-energy-resolution CdZnTe detector and a modern imaging processing technique, this device is capable of effec- tively suppressing the background and gaining more information, thus it can obtain a better image than conventional X-ray devices. In the experiment of PCB imaging, all soldered points and chip components are sharply demonstrated.

室温半导体CdZnTe(CdTe)探测器性能综述

CdZnTe(CdTe)探测器是近年来迅速发展的新型半导体探测器,具有体积小、分辨率高、可在室温下工作等优点。由于探测器晶体内电荷收集不完全,导致所测的γ谱会产生低能尾巴,从而增加了谱解析的困难,需要进行新的解谱算法研究。介绍了其基本性能、电极设计、γ谱解析方法和发展趋势。

室温辐射探测器用CdZnTe晶体生长及其器件制备

采用改进的垂直布里奇曼法生长了直径为60 mm的碲锌镉晶体,晶体利用率达到70%以上。晶体中Te沉淀/夹杂密度小于1×10-3cm2,电阻率达到4×1010Ω.cm。利用得到的晶体制备了平面型单元探测器,测量了对不同能量射线的分辨率,其中对241Amγ能谱的分辨率达到4.7%,对137Cs能谱的分辨率为4.2%。采用Hecht公式对探测器收集效率与偏压的关系进行了拟合,得到电子的迁移率与寿命乘积值达到2.3×10-3cm2/V。

基于CdZnTe像素阵列探测技术的伽玛源成像

根据高能射线针孔成像理论,采用CdZnTe像素阵列探测器建立了直接成像探测模式的伽玛源针孔探测系统。测试分析了CdZnTe像素阵列探测器的能量分辨力及峰值效率,讨论研究了针孔成像探测系统的调制传递函数和附加噪声特性,测试获得直径5mm137Cs源的探测图像,采用Lucy-Richardson迭代算法得到了137Cs源的复原图像。实验结果表明:CdZnTe探测器对662keV137Cs源的能量分辨力为6.25%～7.50%,峰值效率65.0%～72.5%;成像系统探测图像存在一定扩散现象,所采用的Lucy-Richardson迭代复原算法能较好地修正图像扩散,提高探测图像中心区域细节分辨力;估算所得137Cs源尺寸误差约0.5mm,所建立的CdZnTe针孔成像探测系统能有效得到小尺寸伽玛源的辐照强度分布及尺寸信息。

CdZnTe像素探测器的制备与表征

本文采用CdZnTe单晶制成像素探测器,并对其能谱响应特性及均匀性进行了系统表征。通过I-V和能谱响应测试,测定了晶体的电阻率和载流子迁移率与寿命的积,并用红外透过显微成像观察了晶体内Te夹杂的分布特性。采用光刻、剥离和真空蒸镀技术,在CdZnTe晶片上制备了8×8的像素电极,用丝网印刷和贴片技术通过导电银胶实现像素电极与读出电路的准确连接,制备出CdZnTe像素探测器。对像素探测器的测试表明,-300V下单像素最大漏电流小于0.7nA,对241 Am 59.5keV的能量分辨率可达5.6%,优于平面探测器。进一步分析了晶体内Te夹杂等缺陷对探测器漏电流和能谱响应特性的影响规律,结果表明,Te夹杂的聚集会显著增加漏电流,并降低探测器的能量分辨率。

钝化处理对CdZnTe Γ射线探测器漏电流的影响

表面漏电流引起的噪声会限制CdZnTe探测器的性能 ,尤其对于共面栅探测器 ,漏电噪声的大小与器件的电极设计和表面处理工艺密切相关。研究了化学钝化的工艺条件对CdZnTe表面状态的影响 ,借助原子力显微镜、电子探针和微电流测试仪等手段 ,研究了CZT表面形貌、组成等特性与器件电学性能之间的关系 。

低压布里奇曼法CdZnTe晶体生长及其热应力模拟

采用有限元方法,对晶体结晶结束位置处的晶体内部热应力分布进行了数值模拟,结果表明:晶体在石英安瓿内壁附近,变径处以及头部尖端处的热应力较大,应力值约在108N/m2数量级,晶体中部热应力分布较小且比较均匀,约为107N/m2。为了防止晶体在生长过程中头部尖端处以及变径处的位错延伸至晶体内部,提出了在不同生长阶段采用不同下降速度,并且在晶体下降至变径处采用“回熔”操作的新工艺。实验结果表明:利用新工艺生长的晶体位错密度明显降低,约为2×102cm-2,同时显著地提高了晶体的利用率。