An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and inve...An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and investigated by simulation. There are two key features in the proposed device： one is a U-shaped gate around the oxide trench, which extends from source to drain （UG LDMOS）; the other is an N pillar and P pillar located in the trench sidewall. In the on-state, electrons accumulate along the U-shaped gate, providing a continuous low resistance current path from source to drain. The Ron,sp is thus greatly reduced and almost independent of the drift region doping concentration. In the off-state, the N and P pillars not only enhance the electric field （E-field） strength of the trench oxide, but also improve the E-field distribution in the drift region, leading to a significant improvement in the BV. The BV of 662 V and Ron,sp of 12.4 mΩ.cm2 are achieved for the proposed UG LDMOS. The BV is increased by 88.6% and the Ron,sp is reduced by 96.4%, compared with those of the conventional trench LDMOS （CT LDMOS）, realizing the state-of-the-art trade-off between BV and Ron,sp.展开更多
从预装式U型电缆沟的技术可行性和经济合理性两方面分析了预装式U型电缆沟的特点。依托某500 k V变电工程,将预装式U型电缆沟作为应用试点。通过与现浇混泥土电缆沟进行对比分析,证明采用预装式U型电缆沟可以有效降低现场施工工作量和...从预装式U型电缆沟的技术可行性和经济合理性两方面分析了预装式U型电缆沟的特点。依托某500 k V变电工程,将预装式U型电缆沟作为应用试点。通过与现浇混泥土电缆沟进行对比分析,证明采用预装式U型电缆沟可以有效降低现场施工工作量和施工周期,解决传统施工方法存在的问题,为变电站进一步实现"设计标准化、加工工厂化、安装机械化、施工专业化"建设奠定了基础。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176069 and 61376079)the Program for New Century Excellent Talents at the University of Ministry of Education of China(Grant No.NCET-11-0062)
文摘An ultra-low specific on-resistance （Ron,sp） oxide trench-type silicon-on-insulator （SOI） lateral double-diffusion metal-oxide semiconductor （LDMOS） with an enhanced breakdown voltage （BV） is proposed and investigated by simulation. There are two key features in the proposed device： one is a U-shaped gate around the oxide trench, which extends from source to drain （UG LDMOS）; the other is an N pillar and P pillar located in the trench sidewall. In the on-state, electrons accumulate along the U-shaped gate, providing a continuous low resistance current path from source to drain. The Ron,sp is thus greatly reduced and almost independent of the drift region doping concentration. In the off-state, the N and P pillars not only enhance the electric field （E-field） strength of the trench oxide, but also improve the E-field distribution in the drift region, leading to a significant improvement in the BV. The BV of 662 V and Ron,sp of 12.4 mΩ.cm2 are achieved for the proposed UG LDMOS. The BV is increased by 88.6% and the Ron,sp is reduced by 96.4%, compared with those of the conventional trench LDMOS （CT LDMOS）, realizing the state-of-the-art trade-off between BV and Ron,sp.
文摘从预装式U型电缆沟的技术可行性和经济合理性两方面分析了预装式U型电缆沟的特点。依托某500 k V变电工程,将预装式U型电缆沟作为应用试点。通过与现浇混泥土电缆沟进行对比分析,证明采用预装式U型电缆沟可以有效降低现场施工工作量和施工周期,解决传统施工方法存在的问题,为变电站进一步实现"设计标准化、加工工厂化、安装机械化、施工专业化"建设奠定了基础。
