The performance of UV/H_2O_2, UV/O_3, and UV/H_2O_2/O_3 oxidationsystems for the treatment of municipal solid-waste landfill leachatewas investigated. Main objective of the experiment was to removetotal organic carbon...The performance of UV/H_2O_2, UV/O_3, and UV/H_2O_2/O_3 oxidationsystems for the treatment of municipal solid-waste landfill leachatewas investigated. Main objective of the experiment was to removetotal organic carbon (TOC), non-biodegradable organic compounds(NBDOC) and color. In UV/H_2O_2 oxidation experiment, with theincrease of H_2O_2 dosage, removal efficiencies of TOC and coloralong with the ratio of biochemical oxygen demand (BOD) to chemicaloxygen demand (COD) of the effluent were increased and a betterperformance was obtained than the system H_2O_2 alone.展开更多
Surface treatment plays an important role in the process of making high performance AlGaN/GaN HEMTs. A clean surface is critical for enhancing device performance and long-term reliability. By experimenting with differ...Surface treatment plays an important role in the process of making high performance AlGaN/GaN HEMTs. A clean surface is critical for enhancing device performance and long-term reliability. By experimenting with different surface treatment methods, we find that using UV/ozone treatment significantly influences the electrical properties of Ohmic contacts and Schottky contacts. According to these experimental phenomena and Xray photoelectron spectroscopy surface analysis results, the effect of the UV/ozone treatment and the reason that it influences the Ohmic/Schottky contact characteristics of AlGaN/GaN HEMTs is investigated.展开更多
A simple and reproducible method to control the thickness of black phosphorus flakes in real time using a UV/ozone treatment is demonstrated. Back-gated black phosphorus field-effect transistors （FETs） were fabricat...A simple and reproducible method to control the thickness of black phosphorus flakes in real time using a UV/ozone treatment is demonstrated. Back-gated black phosphorus field-effect transistors （FETs） were fabricated using thick black phosphorus flakes obtained by thinning of black phosphorus, as oxygen radicals generated by UV irradiation formed phosphorus oxides on the surface. In order to monitor the thickness effect on the electrical properties, the fabricated FETs were loaded in the UV/ozone chamber, where both the optical （micro-Raman spectroscopy and optical microscopy） and electrical properties （current-voltage characteristics） were monitored in situ. We observed an intensity decrease of the Raman modes of black phosphorus while the field-effect mobility and on/off ratio increased by 48% and 6,800%, respectively. The instability in ambient air limits the investigation and implementation of ultra-thin black phosphorus. However, the method reported in this study allowed us to start with thick black phosphorous flakes, providing a reliable approach for optimizing the electrical performance of black phosphorus-based electronic devices. We believe that these results can motivate further studies using mono- and few-layer black phosphorus.展开更多
文摘The performance of UV/H_2O_2, UV/O_3, and UV/H_2O_2/O_3 oxidationsystems for the treatment of municipal solid-waste landfill leachatewas investigated. Main objective of the experiment was to removetotal organic carbon (TOC), non-biodegradable organic compounds(NBDOC) and color. In UV/H_2O_2 oxidation experiment, with theincrease of H_2O_2 dosage, removal efficiencies of TOC and coloralong with the ratio of biochemical oxygen demand (BOD) to chemicaloxygen demand (COD) of the effluent were increased and a betterperformance was obtained than the system H_2O_2 alone.
文摘Surface treatment plays an important role in the process of making high performance AlGaN/GaN HEMTs. A clean surface is critical for enhancing device performance and long-term reliability. By experimenting with different surface treatment methods, we find that using UV/ozone treatment significantly influences the electrical properties of Ohmic contacts and Schottky contacts. According to these experimental phenomena and Xray photoelectron spectroscopy surface analysis results, the effect of the UV/ozone treatment and the reason that it influences the Ohmic/Schottky contact characteristics of AlGaN/GaN HEMTs is investigated.
文摘A simple and reproducible method to control the thickness of black phosphorus flakes in real time using a UV/ozone treatment is demonstrated. Back-gated black phosphorus field-effect transistors （FETs） were fabricated using thick black phosphorus flakes obtained by thinning of black phosphorus, as oxygen radicals generated by UV irradiation formed phosphorus oxides on the surface. In order to monitor the thickness effect on the electrical properties, the fabricated FETs were loaded in the UV/ozone chamber, where both the optical （micro-Raman spectroscopy and optical microscopy） and electrical properties （current-voltage characteristics） were monitored in situ. We observed an intensity decrease of the Raman modes of black phosphorus while the field-effect mobility and on/off ratio increased by 48% and 6,800%, respectively. The instability in ambient air limits the investigation and implementation of ultra-thin black phosphorus. However, the method reported in this study allowed us to start with thick black phosphorous flakes, providing a reliable approach for optimizing the electrical performance of black phosphorus-based electronic devices. We believe that these results can motivate further studies using mono- and few-layer black phosphorus.
