Intrinsic ferroelectric materials play a critical role in the development of high-density integrated device. Despite some two-dimensional (2D) ferroelectrics have been reported, the research on one-dimensional (1D) in...Intrinsic ferroelectric materials play a critical role in the development of high-density integrated device. Despite some two-dimensional (2D) ferroelectrics have been reported, the research on one-dimensional (1D) intrinsic ferroelectric materials remains relatively scare since 1D atomic structures limit their van der Waals (vdW) epitaxy growth. Here, we report the synthesis of 1D intrinsic vdW ferroelectric SbSI nanowires via a confined-space chemical vapor deposition. By precisely controlling the partial vapor pressure of I2 and reaction temperature, we can effectively manipulate kinetics and thermodynamics processes, and thus obtain high quality of SbSI nanowires, which is determined by Raman spectroscopy and high-resolution scanning transmission electron microscopy characterizations. The ferroelectricity in SbSI is confirmed by piezo-response force microscopy measurements and the ferroelectric transition temperature of 300 K is demonstrated by second harmonic generation. Moreover, the in-plane polarization switching can be maintained in the thin SbSI nanowires with a thickness of 20 nm. Our prepared 1D vdW ferroelectric SbSI nanowires not only enrich the vdW ferroelectric systems, but also open a new possibility for high-power energy storage nanodevices.展开更多
As an emerging groupⅢ–Ⅵsemiconductor two-dimensional(2D)material,gallium selenide(GaSe)has attracted much attention due to its excellent optical and electrical properties.In this work,high-quality epitaxial growth ...As an emerging groupⅢ–Ⅵsemiconductor two-dimensional(2D)material,gallium selenide(GaSe)has attracted much attention due to its excellent optical and electrical properties.In this work,high-quality epitaxial growth of few-layer GaSe nanoflakes with different thickness is achieved via chemical vapor deposition(CVD)method.Due to the non-centrosymmetric structure,the grown GaSe nanoflakes exhibits excellent second harmonic generation(SHG).In addition,the constructed GaSe nanoflake-based photodetector exhibits stable and fast response under visible light excitation,with a rise time of 6 ms and decay time of 10 ms.These achievements clearly demonstrate the possibility of using GaSe nanoflake in the applications of nonlinear optics and(opto)-electronics.展开更多
基金supported by the National Key R&D Program of China(Nos.2022YFA1203901 and 202221855043)the National Natural Science Foundation of China(Nos.62174013,92265111,and 12104050)+2 种基金the National Science Foundation for Distinguished Young Scholars(No.JQ23007)the Beijing Natural Science Foundation(No.JQ23007)the special fund for Science and Technology Innovation Teams of Shanxi Province(No.202304051001026)。
文摘Intrinsic ferroelectric materials play a critical role in the development of high-density integrated device. Despite some two-dimensional (2D) ferroelectrics have been reported, the research on one-dimensional (1D) intrinsic ferroelectric materials remains relatively scare since 1D atomic structures limit their van der Waals (vdW) epitaxy growth. Here, we report the synthesis of 1D intrinsic vdW ferroelectric SbSI nanowires via a confined-space chemical vapor deposition. By precisely controlling the partial vapor pressure of I2 and reaction temperature, we can effectively manipulate kinetics and thermodynamics processes, and thus obtain high quality of SbSI nanowires, which is determined by Raman spectroscopy and high-resolution scanning transmission electron microscopy characterizations. The ferroelectricity in SbSI is confirmed by piezo-response force microscopy measurements and the ferroelectric transition temperature of 300 K is demonstrated by second harmonic generation. Moreover, the in-plane polarization switching can be maintained in the thin SbSI nanowires with a thickness of 20 nm. Our prepared 1D vdW ferroelectric SbSI nanowires not only enrich the vdW ferroelectric systems, but also open a new possibility for high-power energy storage nanodevices.
基金supported by the National Natural Science Foundation of China(Grant Nos.51902227 and 11574241)the Open Project of State Key Laboratory of Materials Processing and Die&Mould Technology,Huazhong University of Science and Technology,China(Grant No.P2020-021).
文摘As an emerging groupⅢ–Ⅵsemiconductor two-dimensional(2D)material,gallium selenide(GaSe)has attracted much attention due to its excellent optical and electrical properties.In this work,high-quality epitaxial growth of few-layer GaSe nanoflakes with different thickness is achieved via chemical vapor deposition(CVD)method.Due to the non-centrosymmetric structure,the grown GaSe nanoflakes exhibits excellent second harmonic generation(SHG).In addition,the constructed GaSe nanoflake-based photodetector exhibits stable and fast response under visible light excitation,with a rise time of 6 ms and decay time of 10 ms.These achievements clearly demonstrate the possibility of using GaSe nanoflake in the applications of nonlinear optics and(opto)-electronics.
