UV-ozone-treated MoO_3 as the hole-collecting buffer layer for high-efficiency solution-processed SQ:PC_(71) BM photovoltaic devices

The enhanced performance of a squaraine compound, with 2,4-bis[4-（N,N-diisobutylamino）-2,6-dihydroxyphenyl] squaraine as the donor and [6,6]-phenyl-C71-butyric acid methyl ester （PC71BM） as the acceptor, in solution-processed or- ganic photovoltaic devices is obtained by using UV-ozone-treated MoO3 as the hole-collecting buffer layer. The optimized thickness of the MoO3 layer is 8 nm, at which the device shows the best power conversion efficiency （PCE） among all devices, resulting from a balance of optical absorption and charge transport. After being treated by UV-ozone for 10 min, the transmittance of the MoO3 film is almost unchanged. Atomic force microscopy results show that the treated surface morphology is improved. A high PCE of 3.99% under AM 1.5 G illumination （100 mW/cm2） is obtained.

Influence of a UV-ozone treatment on amorphous SnO_(2) electron selective layers for highly efficient planar MAPbI3 perovskite solar cells

The effect of ultraviolet-ozone(UVO)irradiation on amorphous(am)SnO_(2) and its impact on the photoconversion efficiency of MAPbI3-based perovskite solar cells were investigated in detail.UVO treatment was found to increase the amount of chemisorbed oxygen on the am-SnO_(2) surface,reducing the surface energy and contact angle.Physicochemical changes in the am-SnO_(2) surface lowered the Gibbs free energy for the densification of perovskite films and facilitated the formation of homogeneous perovskite grains.In addition,the Fermi energy of the UVO-treated am-SnO_(2) shifted upwards to achieve an ideal band offset for MAPbI3,which was verified by theoretical calculations based on the density functional theory.We achieved a champion efficiency of 19.01% with a statistical reproducibility of 17.01±1.34% owing to improved perovskite film densification and enhanced charge transport/extraction,which is considerably higher than the 13.78±2.15% of the counterpart.Furthermore,UVO-treated,am-SnO_(2)-based devices showed improved stability and less hysteresis,which is encouraging for the future application of up-scaled perovskite solar cells.

A novel silver-doped nickel oxide hole-selective contact for crystalline silicon heterojunction solar cells

Based on its band alignment,p-type nickel oxide(NiO_(x))is an excellent candidate material for hole transport layers in crystalline silicon heterojunction solar cells,as it has a smallΔEV and largeΔEC with crystalline silicon.Herein,to overcome the poor hole selectivity of stoichiometric NiO_(x) due to its low carrier concentration and conductivity,silver-doped nickel oxide(NiO_(x):Ag)hole transport layers with high carrier concentrations were prepared by co-sputtering high-purity silver sheets and pure NiO_(x) targets.The improved electrical conductivity of NiO_(x) was attributed to the holes generated by the Ag^(+)substituents for Ni^(2+),and moreover,the introduction of Ag^(+)also increased the amount of Ni^(3+)present,both of which increased the carrier concentration in NiO_(x).Ag^(+)doping also reduced the c-Si/NiO_(x) contact resistivity and improved the hole-selective contact with NiO_(x).Furthermore,the problems of particle clusters and interfacial defects on the surfaces of NiO_(x):Ag films were solved by UV-ozone oxidation and high-temperature annealing,which facilitated separation and transport of carriers at the c-Si/NiO_(x) interface.The constructed c-Si/NiO_(x):Ag solar cell exhibited an increase in open-circuit voltage from 490 to 596 mV and achieved a conversion efficiency of 14.4%.