Longitudinal twinning α-In2Se3 nanowires with the （10T 8） twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized a-In2Se3 nanowire exhibited typical n-type se...Longitudinal twinning α-In2Se3 nanowires with the （10T 8） twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized a-In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm2-V1. S-1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared （UV-visible-NIR） region. Besides, the fabricated device showed a high responsivity of 8.57 × 10^5 A·W^-1, high external quantum efficiency up to 8.8 × 107% and a high detectivity of 1.58 ×10^12 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In2Se3 nano- wires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.展开更多
InAs is a direct, narrow band gap （0.354 eV） material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report t...InAs is a direct, narrow band gap （0.354 eV） material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm. The responsivity, external quantum efficiency and detectivity of the device were respectively measured to be 4.4 × 103 AW , 1.03 × 106%, and 2.6 × 1011 Jones to visible incident light. Time dependent measurements at different wavelengths and under different light intensities also demonstrated the fast, reversible, and stable photoresponse of our device. Theoretical calculations of the optical absorption and the electric field component distribution were also performed to elucidate the mechanism of the enhanced photoresponse. Our results demonstrate that the single-crystalline InAs NWs are very promising candidates for the design of high sensitivity and high stability nanoscale photodetectors with a broad band photoresponse.展开更多
文摘Longitudinal twinning α-In2Se3 nanowires with the （10T 8） twin plane were synthesized to fabricate high performance single nanowire based photodetectors. As-synthesized a-In2Se3 nanowire exhibited typical n-type semiconducting behavior with an electron mobility of 23.1 cm2-V1. S-1 and a broadband spectral response from 300 to 1100 nm, covering the ultraviolet-visible-near-infrared （UV-visible-NIR） region. Besides, the fabricated device showed a high responsivity of 8.57 × 10^5 A·W^-1, high external quantum efficiency up to 8.8 × 107% and a high detectivity of 1.58 ×10^12 Jones under 600 nm light illumination at a basis of 3 V, which are much higher than previously reported In2Se3 nanostructures due to the interface defect effect of the twin plane. The results indicated that the longitudinal twinning α-In2Se3 nano- wires have immense potential for further applications in highly performance broadband photodetectors and other optoelectronic devices.
基金Acknowledgements This work was supported by the National Natural Science Foundation （Nos. 91123008, 51002059, 21001046）, the 973 Program of China （No. 2011CB933300）, and the Program for New Century Excellent Talents of the Universities in China （grant No. NCET-11-0179）. We thank the Analytical and Testing Center of Huazhong University of Science and Technology for measurements.
文摘InAs is a direct, narrow band gap （0.354 eV） material with ultrahigh electron mobility, and is potentially a good optoelectronic device candidate in the wide UV-visible-near-infrared region. In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm. The responsivity, external quantum efficiency and detectivity of the device were respectively measured to be 4.4 × 103 AW , 1.03 × 106%, and 2.6 × 1011 Jones to visible incident light. Time dependent measurements at different wavelengths and under different light intensities also demonstrated the fast, reversible, and stable photoresponse of our device. Theoretical calculations of the optical absorption and the electric field component distribution were also performed to elucidate the mechanism of the enhanced photoresponse. Our results demonstrate that the single-crystalline InAs NWs are very promising candidates for the design of high sensitivity and high stability nanoscale photodetectors with a broad band photoresponse.
