Ultra-thin-body (UTB) In0.53Ga0.47As-on-insulator (In0.53Ga0.47As-OI) structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nm...Ultra-thin-body (UTB) In0.53Ga0.47As-on-insulator (In0.53Ga0.47As-OI) structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors (nMOSFETs) are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability (PBTI) and hot carrier injection (HCI) characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.展开更多
The speed performance and static power dissipation of the ultra-thin-body (UTB) MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width (Lsp) and sil...The speed performance and static power dissipation of the ultra-thin-body (UTB) MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width (Lsp) and silicon film thickness (tsi) are two independent parameters that influence the speed and static power dissipation of UTB siliconon-insulator (SOI) MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of tsi and Lsp for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.展开更多
基金Supported by the National Program on Key Basic Research Project of China under Grant No 2011CBA00607the National Natural Science Foundation of China under Grant Nos 61106089 and 61376097the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001
文摘Ultra-thin-body (UTB) In0.53Ga0.47As-on-insulator (In0.53Ga0.47As-OI) structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors (nMOSFETs) are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability (PBTI) and hot carrier injection (HCI) characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.
基金Project supported by the National Natural Science Foundation of China (Grant No 60625403), the State Key Development Program for Basic Research of China (Grant No 2006CB302701).
文摘The speed performance and static power dissipation of the ultra-thin-body (UTB) MOSFETs have been comprehensively investigated, with both DC and AC behaviours considered. Source/drain extension width (Lsp) and silicon film thickness (tsi) are two independent parameters that influence the speed and static power dissipation of UTB siliconon-insulator (SOI) MOSFETs respectively, which can result in great design flexibility. Based on the different effects of physical and geometric parameters on device characteristics, a method to alleviate the contradiction between power dissipated and speed of UTB SOI MOSFETs is proposed. The optimal design regions of tsi and Lsp for low operating power and high performance logic applications are given, which may shed light on the design of UTB SOI MOSFETs.