Broadband Dual-Input Doherty Power Amplifier Design Based on a Simple Adaptive Power Dividing Ratio Function

In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method.

A Hybrid Integrated and Low-Cost Multi-Chip Broadband Doherty Power Amplifier Module for 5G Massive MIMO Application

In this paper,a hybrid integrated broadband Doherty power amplifier(DPA)based on a multi-chip module(MCM),whose active devices are fabricated using the gallium nitride(GaN)process and whose passive circuits are fabricated using the gallium arsenide(GaAs)integrated passive device(IPD)process,is proposed for 5G massive multiple-input multiple-output(MIMO)application.An inverted DPA structure with a low-Q output network is proposed to achieve better bandwidth performance,and a single-driver architecture is adopted for a chip with high gain and small area.The proposed DPA has a bandwidth of 4.4-5.0 GHz that can achieve a saturation of more than 45.0 dBm.The gain compression from 37 dBm to saturation power is less than 4 dB,and the average power-added efficiency(PAE)is 36.3%with an 8.5 dB peak-to-average power ratio(PAPR)in 4.5-5.0 GHz.The measured adjacent channel power ratio(ACPR)is better than50 dBc after digital predistortion(DPD),exhibiting satisfactory linearity.

5G Wideband Bandpass Filtering Power Amplifiers Based on a Bandwidth-Extended Bandpass Matching Network

In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.

Research Towards Terahertz Power Amplifiers in Silicon-Based Process

In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.

Photonic generation of power-efficient FCC-compliant ultra-wideband waveforms using semiconductor optical amplifier (SOA):theoretical analysis and experiment verification

We theoretically design a power-efficient ultra-wideband pulse generator by combining three monocycle pulses with different weights. We also experimentally demonstrate a feasible scheme to generate such power-efficient ultra-wideband waveforms using cross-phase modulation in a single semiconductor optical amplifier. The designed ultra-wideband pulse fully satisfies the requirements for the spectral mask specified by the Federal Communications Commission with high power efficiency. In the experiment, a power-efficient ultra-wideband waveform with a pulse duration of 310 ps is achieved, and the power efficiency is greatly improved compared with that of a single nlonocycle pulse or a mixture of two monoeycles.

Step memory polynomial predistorter for power amplifiers with memory

To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.

AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band

A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10 × 120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at VDS = 40V, IDS = 0.9A, a maximum CW output power of 41.4dBm with a maximum power added efficiency （PAE） of 32.54% and a power combine efficiency of 69% was achieved at 5.4GHz.

A4~12GHz Wideband Balanced MIC Power Amplifier

A 4-12GHz wideband power amplifier,using a balanced configuration with a strip line Lange coupler, is designed and fabricated. This power amplifier shows a maximum continuous wave output power of 29.5dBm at 8GHz center frequency with an associated gain of 8.5dB and a gain flatness of ＋ /- 0.6dB in the 4-12GHz frequency range.

SiGe HBT Class AB Power Amplifier for Wireless Communications

Good performance SiGe power amplifiers applicable to wireless communications are demonstrated.The output power can reach more than 30dBm in class B mode.And in class AB mode,the output power at 1dB compression point ( P 1dB ) is 24dBm,the output third order intercept (TOI) power is 39dBm under V cc of 4V.The highest power added efficiency (PAE) and PAE at 1dB compression point are 34% and 25%,respectively.The adjacent channel power rejection for CDMA signal is more than 42dBc,which complies with IS95 specification.

A monolithic InGaP/GaAs HBT power amplifier for W-CDMA applications

A monolithic microwave integrated circuit （MMIC） power amplifier （PA） is proposed. It adopts a new on-chip bias circuit, which not only avoids the instability of the direct current bias caused by the change in the power supply and temperature, but also compensates deviations caused by the increase in input power. The bias circuit is a current-mirror configuration, and the feedback circuit helps to maintain bias voltage at a constant level. The gain of the feedback circuit is improved by the addition of a non-inverting amplifier within the feedback circuit. A shunt capacitor at the base node of the active bias transistor enhances the linearity of the PA. The chip is fabricated in an InGaP/GaAs heterojunction bipolar transistor （HBT） process. Measured results exhibit a 26. 6-dBm output compression point, 33.6% power-added efficiency （PAE） and - 40.2 dBc adjacent channel power ratio （ACPR） for wide-band code division multiple access （W-CDMA） applications.

A CMOS Power Amplifier with 100% and 18% Modulation Depth for Mobile RFID Readers

Aiming at the specific protocol of RFID technology,a 915MHz CMOS transmitter front-end for OOK modulation is implemented in a 0.18μm CMOS process. The transmitter incorporates a class-E power amplifier （PA）, a modulator, and a control logic unit. The direct-conversion architecture minimizes the required on-and-off-chip components and provides a low-cost and efficient solution. A novel structure is proposed to provide the modulation depth of 100% and 18% ,respectively. The PA presents an output ldB power of 17.6dBm while maintaining a maximum PAE of 35.4%.

A Ka-Band PHEMT MMIC 1W Power Amplifier

The performance of a microwave monolithic integrated circuit .（MMIC） amplifier with high output power in the Ka-band is presented. Using 75mm 0.25μm GaAs PHEMT technology provided by the Hebei Semiconductor Research Institute, this three-stage power amplifier, with a chip size of 19.25mm^2 （3.5mm × 5.5mm）, on 100μm GaAs substrate achieves a linear gain of more than 16dB in the 32.5-35.5GHz frequency range,with an average output power at 1dB gain compression of P1dB = 29. 8dBm and a maximum saturated output power of Psat = 31dBm.

A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness

A monolithic power amplifier designed for 3GHz communication applications with improved gain flatness is studied based on InGaP/GaAs hetero-junction bipolar transistor technology in a commercial foundry. To improve gain flatness in a simple way, no external component was used in the real circuit except the decoupled bypass capacitors and RF choke. The measured linear gain is 23dB with gain flatness of ＋_ 0.25dB,satisfying the design goal and matching well with simulation results. This 2-stage power amplifier can deliver 31dBm linear output power and 44% power-added efficiency in the 400MHz bandwidth. The successful design with improved gain flatness is the result of superior distortion compensation and a coil model used as the RF choke.

Behavioral modeling of RF power amplifiers with time-delay feed-forward neural networks

A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.

Highly efficient class-F power amplifier with digital predistortion for WCDMA applications

A digital predistorted class-F power amplifier （PA） using Cree GaN HEMT CGH40010 operating at 2. 12 GHz is presented to obtain high efficiency and excellent linearity for wideband code-division multiple access （ WCDMA ） applications. Measurement results with the continuous wave （CW） signals indicate that the designed class-F PA achieves a peak power-added efficiency （PAE） of 75. 2% with an output power of 39.4 dBm. The adjacent channel power ratio （ACPR） of the designed PA after digital predistortion （DPD） decreases from -28. 3 and -27. 5 dBc to -51.9 and -54. 0 dBc, respectively, for a 4-carrier 20 MHz WCDMA signal with 7. 1 dB peak to average power ratio （PAPR）. The drain efficiency （DE） of the PA is 37. 8% at an average output power of 33. 3 dBm. The designed power amplifier can be aoolied in the WCDMA system.

Nested Miller Active-Capacitor Frequency Compensation for Low-Power Three-Stage Amplifiers

A new frequency compensation technique for low-power, area-efficient multistage amplifiers is introduced. Using nested active capacitors, our scheme achieves better bandwidth-to-power and slew-rate-to-power performances than previous works. Implemented in standard 0.35μm CMOS technology, our three-stage amplifier achieves 105dB DC gain, 3.3M GBW,68 phase margin, and 2.56V/μs average slew rate under a 150pF capacitive load. All of these are realized with only 40μW power consumption under a 2V power supply,with very small compensation capacitors.

ISM Band Medium Power Amplifier

With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compression at the low input power level is eliminated successfully.At 3.5V of supply voltage of the power amplifier after optimization exhibits 30dBm of maximum linear output power,43.4% of power added efficiency 109.7mA of a quite low quiescent bias current ,29.1dB of the corresponding gain,and -100dBc of the adjacent channel power rejection (ACPR) at the output power of 30dBm.

An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network

8GHz 20W internally matched A1GaN/GaN HEMTs have been developed. The input and output matching net- works are realised with microstrip lines on a 0. 381mm thick alumina substrate. To improve the stability factor K of the device, a lossy RC network is used at the input of the device. The developed internally matched power amplifier module exhibits 43dBm （20W） power output with a 7.3dB linear gain,38.1% PAIE,and combined power efficiency of 70.6% at 8GHz.

New thermal optimization scheme of power module in solid-state amplifier

The new 1 kW power module for ADS project needs the optimization of cooling design including water flow and tunnel layout, and the water flow of three tons per hour was chosen to be a goal for a 20 kW power source.According to analysis from the insertion and integrated loss, about 24 modules were integrated into the rated power. Thus, every module has a cooling flow of 2.1 L/min for RF heat load and power supply loss, which is very hard to achieve if no special consideration and techniques. A new thermal simulation method was introduced for thermal analysis of cooling plate through CST multi-physics suite,especially for temperature of power LDMOS transistor.Some specific measures carried out for the higher heat transfer were also presented in this paper.

Design of CMOS class-E power amplifier for low power applications

A fully integrated class-E power amplifier（PA） at 2.4 GHz implemented in a 0. 18 μm 6-metal-layer mixed/RF CMOS （ complementary metal-oxide-semiconductor transistor ） technology is presented. A two-stage amplification structure is chosen for this PA. The driving stage produces a high swing switch signal by using resonation technology. The output stage is designed as a class-E topology to realize the power amplification. Under a 1.2 V power supply, the PA delivers a maximum output power of 8. 8 dBm with a power-added efficiency （PAE） of 44%. A new power control method for the class-E power amplifier is described. By changing the amplitude and duty cycle of the signal which enters the class-E switch transistor, the output power can be covered from - 3 to 8. 8 dBm through a three-bit control word. The proposed PA can be used in low power applications, such as wireless sensor networks and biotelemetry systems.