The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. ...The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.展开更多
针对微弱光信号探测系统中雪崩光电二极管(APD)在工作中的温漂特性,提出了一种适合APD的闭环温度控制方法。该方法将APD、热敏电阻器和TEC制冷器集成在同一组件中,采用模拟电路深度负反馈技术实现闭环温度控制,并运用经典的控制理论建...针对微弱光信号探测系统中雪崩光电二极管(APD)在工作中的温漂特性,提出了一种适合APD的闭环温度控制方法。该方法将APD、热敏电阻器和TEC制冷器集成在同一组件中,采用模拟电路深度负反馈技术实现闭环温度控制,并运用经典的控制理论建立数学模型对PID电路进行优化,保证了APD探测电路的增益稳定性。试验表明:该系统中APD光电探测器温度控制精度为±0.1℃,输出电压波动约为±0.5 m V,很好地抑制了外界温度变化对APD增益的影响。展开更多
基金supported by the National Natural Science Foundation of China(No.61404132)the Fundamental Research Funds for the Central Universities(Nos.lzujbky-2015-302,lzujbky-2017-171,and lzujbky-2016-119)
文摘The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes(APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation–recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.
文摘针对微弱光信号探测系统中雪崩光电二极管(APD)在工作中的温漂特性,提出了一种适合APD的闭环温度控制方法。该方法将APD、热敏电阻器和TEC制冷器集成在同一组件中,采用模拟电路深度负反馈技术实现闭环温度控制,并运用经典的控制理论建立数学模型对PID电路进行优化,保证了APD探测电路的增益稳定性。试验表明:该系统中APD光电探测器温度控制精度为±0.1℃,输出电压波动约为±0.5 m V,很好地抑制了外界温度变化对APD增益的影响。
