Effects of Natural Radiation, PAR and Artificial Ultraviolet Radiation-B on the Ultrastructure and Histochemistry of Leaf of Oryza sativa L.

Ultraviolet radiation-B (UVBR) affects plants in many important ways, including reduced growth rate, reduction of primary productivity and changes in ultrastructure. The rice (Oryza sativa) is one of the most cultivated cereal in the world along with corn and wheat, representing over 50% of agricultural production. In this study, we examined O. sativa exposed to natural radiation denominated which “ambient samples”, plants cultivated which photosynthetically active radiation (PAR), denominated with PAR-only and plants cultivated with PAR + UVBR for 2 h per day during 30 days of cultivation in vitro. The samples were processed for electron microscopy and histochemistry analysis. PAR + UVBR caused changes in the ultrastructure of leaf of O. sativa, mesophyll cells, which included increased thickness of the cell wall and plastoglobuli, reduced intracellular spaces, changes in the cell contour, and destruction of chloroplast and mitochondria internal organization. The exposure to PAR + UVBR led to changes in guard and subsidiary cells, and the stomata and papillae were with irregular shape. The reduction of epicuticular wax that covered the leaf, was observed. Taken together, these ?ndings strongly suggested that PAR + UVBR negatively affects the ultrastructure and morphology and growth rates, of leaf of O. sativa and, in the long term, their economic viability.

240 nm AlGaN-based deep ultraviolet micro-LEDs:size effect versus edge effect

240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.

Ultraviolet‑Irradiated All‑Organic Nanocomposites with Polymer Dots for High‑Temperature Capacitive Energy Storage

Polymer dielectrics capable of operating efficiently at high electric fields and elevated temperatures are urgently demanded by next-generation electronics and electrical power systems.While inorganic fillers have been extensively utilized to improved high-temperature capacitive performance of dielectric polymers,the presence of thermodynamically incompatible organic and inorganic components may lead to concern about the long-term stability and also complicate film processing.Herein,zero-dimensional polymer dots with high electron affinity are introduced into photoactive allyl-containing poly(aryl ether sulfone)to form the all-organic polymer composites for hightemperature capacitive energy storage.Upon ultraviolet irradiation,the crosslinked polymer composites with polymer dots are efficient in suppressing electrical conduction at high electric fields and elevated temperatures,which significantly reduces the high-field energy loss of the composites at 200℃.Accordingly,the ultraviolet-irradiated composite film exhibits a discharged energy density of 4.2 J cm^(−3)at 200℃.Along with outstanding cyclic stability of capacitive performance at 200℃,this work provides a promising class of dielectric materials for robust high-performance all-organic dielectric nanocomposites.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Low-Voltage IGZO Field-Effect Ultraviolet Photodiode

In the era of Internet of Things(Io Ts),an energy-efficient ultraviolet(UV)photodetector(PD)is highly desirable considering the massive usage scenarios such as environmental sterilization,fire alarm and corona discharge monitoring.So far,common self-powered UV PDs are mainly based on metal-semiconductor heterostructures or p–n heterojunctions,where the limited intrinsic built-in electric field restricts further enhancement of the photoresponsivity.In this work,an extremely low-voltage field-effect UV PD is proposed using a gatedrain shorted amorphous IGZO(a-IGZO)thin film transistor(TFT)architecture.A combined investigation of the experimental measurements and technology computer-aided design(TCAD)simulations suggests that the reverse current(ⅠR)of field-effect diode(FED)is highly related with the threshold voltage(Vth)of the parental TFT,implying an enhancement-mode TFT is preferable to fabricate the field-effect UV PD with low dark current.Driven by a low bias of-0.1 V,decent UV response has been realized including large UV/visible(R_(300)/R_(550))rejection ratio(1.9×10^(3)),low dark current(1.15×10^(-12)A)as well as high photo-to-dark current ratio(PDCR,~10^(3))and responsivity(1.89 A/W).This field-effect photodiode provides a new platform to construct UV PDs with well-balanced photoresponse performance at a low bias,which is attractive for designs of large-scale smart sensor networks with high energy efficiency.

Effect of Ultraviolet Radiation on Hsp70 Protein Expression in HaCaT Cells

Ultraviolet radiation by its wavelength is divided into: UVA, UVB and UVC. Only UVA and UVB manage to penetrate the ozone layer, but due to anthropological activities, all of them are capable of interacting with humans to a greater or lesser extent, and can generate adverse effects such as cellular stress when interacting with intra-and extracellular biomolecules. The skin is the first organ in contact with UV radiation, and the stress it generates can be analyzed by the expression of a bioindicator of cellular damage such as Hsp70. Therefore, the objective of the project was: to determine the effect of UVA, UVB and UVC radiation on HaCaT epithelial cells, by analyzing the expression of Hsp70. Materials and methods: HaCaT cells were cultured in vitro, which were irradiated with UVA, UVB and UVC light at different doses, to subsequently determine the degree of Hsp70 expression by Immunodetection by PAGE-SDS and Western Blot. Results: Basal expression of Hsp70 was observed in no irradiated HaCaT cells. When HaCaT cells were irradiated with UVA, UVB, UVC, an increase in this Hsp70 protein was observed. With UVA, a higher degree of expression was observed at a time of 30 minutes of irradiation. With UVB the highest expression shifted to a time of 20 minutes. With UVC, overexpression was observed after 10 minutes. Conclusion: UV radiation generates cellular stress on HaCaT cells, evaluated by the stress bioindicator Hsp70. According to the wavelength of UV radiation, those that have a shorter wavelength have a greater potential for cellular damage, such as UVC.

Ultraviolet Photodetector based on Sr_(2)Nb_(3)O_(10) Perovskite Nanosheets

Liquid-phase exfoliation was employed to synthesize Sr_(2)Nb_(3)O_(10) perovskite nanosheets with thicknesses down to 1.76 nm.Transmission electron microscopy(TEM),atomic force microscope(AFM),X-ray photoelectron spectrometer(XPS),and other characterization techniques were used to evaluate the atomic structure and chemical composition of the exfoliated nanosheets.A UV photodetector based on individual Sr_(2)Nb_(3)O_(10) nanosheets was prepared to demonstrate the application of an ultraviolet(UV) photodetector.The UV photodetector exhibited outstanding photocurrent and responsivity with a responsivity of 3×10^(5) A·W^(-1) at 5 V bias under 280 nm illumination,a photocurrent of 60 nA,and an on/off ratio of 3×10^(2).

Wavelength calibration and spectral analysis of vacuum ultraviolet spectroscopy in EAST

A vacuum ultraviolet(VUV)spectroscopy with a focal length of 1 m has been engineered specifically for observing edge impurity emissions in Experimental Advanced Superconducting Tokamak(EAST).In this study,wavelength calibration for the VUV spectroscopy is achieved utilizing a zinc lamp.The grating angle and charge-coupled device(CCD)position are carefully calibrated for different wavelength positions.The wavelength calibration of the VUV spectroscopy is crucial for improving the accuracy of impurity spectral data,and is required to identify more impurity spectral lines for impurity transport research.Impurity spectra of EAST plasmas have also been obtained in the wavelength range of 50–300 nm with relatively high spectral resolution.It is found that the impurity emissions in the edge region are still dominated by low-Z impurities,such as carbon,oxygen,and nitrogen,albeit with the application of fulltungsten divertors on the EAST tokamak.

Effect of combination of ultraviolet radiation and biocide on fungal-induced corrosion of high-strength 7075 aluminum alloy

The effect of ultraviolet(UV)radiation and biocide benzalkonium chloride(BKC)on fungal-induced corrosion of AA7075 induced by Aspergillus terreus(A.terreus)was deeply studied using analysis of biological activity,surface analysis,and electrochemical measurements.Results demonstrated that the planktonic and sessile spore concentrations decline by more than two orders of magnitude when UV radiation and BKC are combinedly used compared with the control.UV radiation can inhibit the biological activity of A.terreus and influence the stability of passive film of AA7075.Except for direct disinfection,the physical adsorption of BKC on the specimen can effectively inhibit the attachment of A.terreus.The combination of UV radiation and BKC can much more effectively inhibit the corrosion of AA,especially pitting corrosion,due to their synergistic effect.The combined application of UV radiation and BKC can be a good method to effectively inhibit fungal-induced corrosion.

Nitric oxide removal from flue gas coupled with the Fe^(Ⅱ)EDTA regeneration by ultraviolet irradiation

During wet complexation denitrification of flue gas,Fe^(Ⅱ)EDTA regeneration,also known as reducing Fe^(Ⅱ)EDTA and Fe^(Ⅱ)EDTA-nitric oxide(NO)to Fe^(Ⅱ)EDTA,is crucial.In this paper,ultraviolet(UV)light was used for the first time to reduce Fe^(Ⅱ)EDTA-NO.The experimental result demonstrated that Fe^(Ⅱ)EDTA-NO reduction rate increased with UV power increasing,elevated temperature,and initial Fe^(Ⅱ)EDTA-NO concentration decreasing.Fe^(Ⅱ)EDTA-NO reduction rate increased first and then decreased as pH value increased(2.0-10.0).Fe^(Ⅱ)EDTA-NO reduction with UV irradiation presented a first order reaction with respect to Fe^(Ⅱ)EDTA-NO.Compared with other Fe^(Ⅱ)EDTA regeneration methods,Fe^(Ⅱ)EDTA regeneration with UV show more superiority through comprehensive consideration of regeneration rate and procedure.Subsequently,NO absorption experiment by Fe^(Ⅱ)EDTA solution with UV irradiation confirmed that UV can significantly promote the NO removal performance of Fe^(Ⅱ)EDTA.Appropriate oxygen concentration(3%(vol))and acidic environment(pH=4)was favorable for NO removal.With UV power increasing as well as temperature decreasing,NO removal efficiency rose.In addition,the mechanism research indicates that NO from flue gas is mostly converted to NO_(2)-,NO_(3)-,NH_(4)^(+),N_(2),and N_(2)O with Fe^(Ⅱ)EDTA absorption liquid with UV irradiation.UV strengthens NO removal in Fe^(Ⅱ)EDTA absorption liquid by forming a synergistic effect of oxidation-reduction-complexation.Finally,compared with NO removal methods with Fe^(Ⅱ)EDTA,Fe^(Ⅱ)EDTA combined UV system shows prominent technology advantage in terms of economy and secondary pollution.

Optimization of extreme ultraviolet vortex beam based on high harmonic generation

In high harmonic generation(HHG),Laguerre–Gaussian(LG) beams are used to generate extreme ultraviolet(XUV)vortices with well-defined orbital angular momentum(OAM),which have potential applications in fields such as microscopy and spectroscopy.An experimental study on the HHG driven by vortex and Gaussian beams is conducted in this work.It is found that the intensity of vortex harmonics is positively correlated with the laser energy and gas pressure.The structure and intensity distribution of the vortex harmonics exhibit significant dependence on the relative position between the gas jet and the laser focus.The ring-like structures observed in the vortex harmonics,and the interference of quantum paths provide an explanation for the distinct structural characteristics.Moreover,by adjusting the relative position between the jet and laser focus,it is possible to discern the contributions from different quantum paths.The optimization of the HH vortex field is applicable to the XUV,which opens up a new way for exploiting the potential in optical spin or manipulating electrons by using the photon with tunable orbital angular momentum.

Summary of a Life in Observational Ultraviolet/Optical Astronomy

I reminisce on my early life in Section 1;on my education in Sections 2 and 3;on the years at Princeton as a research astronomer in Section 4;on the years on the faculty at Chicago in Section 5;on research on Diffuse Interstellar Bands(DIBs) in Section 6;on construction of the 3.5 m telescope at Apache Point Observatory(APO)in Section 7;on work on the Sloan Digital Sky Survey(SDSS) in Section 8;on work in public education in Chicago in Section 9;and on my travels in Section 10. My main science research is of an observational nature,concerning Galactic and intergalactic interstellar gas. Highlights for me included my work on the orbiting telescope Copernicus, including the discovery of interstellar deuterium;early observations of absorption associated with fivetimes ionized oxygen;and discoveries concerning the phases of gas in the local interstellar medium, based on previously unobservable interstellar UV spectral lines. With other instruments and collaborations, I extended interstellar UV studies to the intergalactic cool gas using quasi-stellar object QSO absorption lines redshifted to the optical part of the spectrum;provided a better definition of the emission and morphological character of the source of absorption lines in QSO spectra;and pursued the identification of the unidentified DIBs. For several of these topics, extensive collaborations with many scientists were essential over many years. The conclusions developed slowly, as I moved from being a graduate student at Chicago, to a research scientist position at Princeton and then to a faculty position at Chicago. At each stage of life, I was exposed to new technologies adaptable to my science and to subsequent projects. From high school days, I encountered several management opportunities which were formative. I have been extremely fortunate both in scientific mentors I had and in experimental opportunities I encountered.

Research on the Performance of Non-Line-of-Sight Ultraviolet Communication in Rain and Fog Environment

Wireless ultraviolet communication is a new type of communication mode. It refers to the transmission of information through the scattering of ultraviolet light by atmospheric particles and aerosol particles. The scattering characteristics can enable the wireless ultraviolet communication system to transmit ultraviolet light signals in a non-line-of-sight manner, which overcomes the weakness that other free space optical communications must work in a line-of-sight manner. Based on the basic theory of scattering and absorption in atmospheric optics, taking the ultraviolet light with a wavelength of 266 nm as an example, this paper introduces the classical model of non-line-of-sight single-scattering coplanarity based on the ellipsoid coordinate system. The model is used to simulate and analyze the relationship between the geometric parameters such as transmission distance, transceiver elevation angle and transceiver half-angle and the received optical power per unit area. The performance of non-line-of-sight ultraviolet communication system in rain and fog environment is discussed respectively. The results show that the transmission quality of non-line-of-sight ultraviolet atmospheric propagation is greatly affected by the communication distance. As the distance increases, the received light power per unit area gradually decreases. In addition, increasing the emission elevation angle, the receiving elevation angle and the receiving half angle is an important way to improve the system performance.

Enhanced Extreme Ultraviolet Free Induction Decay Emission Assisted by Attosecond Pulses

We demonstrate the extreme ultraviolet free induction decay emission that can be significantly enhanced by employing isolated attosecond pulses.The near infrared pulses are applied to excite the neon atoms into Rydberg states coherently,and isolated attosecond pulses are used to manipulate populations of the Rydberg states and the subsequent free induction decay process.The time resolved experimental measurement of dependence of the resonance emission yield would help to understand the buildup dynamics of population of excited states.The enhancement assisted by attosecond pulses can serve as a mechanism to develop high-flux extreme ultraviolet light sources.

Recent developments in deep-ultraviolet sterilization of human respiratory RNA viruses

Deep-ultraviolet(DUV)sterilization technology using DUV-LEDs has attracted considerable attention owing to its portability,eco-friendliness,high potency,and broad-spectrum sterilization.This study compiles the developments of recent DUV sterilization research.Recent works have investigated DUV sterilization from the perspective of device improvement and principle investigation:one employed a novel epitaxial structure to optimize the performance and fabrication cost of DUV-LEDs and realized potent virus disinfection effects for various respiratory RNA viruses,and another work explained the disinfection phenomenon of SARS-CoV-2 and its variants(Delta and Omicron)in a cryogenic environment.These studies have contributed significantly to the development of DUV sterilization.

Realization of high-efficiency AlGaN deep ultraviolet light-emitting diodes with polarization-induced doping of the p-AlGaN hole injection layer

We investigate the polarization-induced doping in the gradient variation of Al composition in the pAl_(0.75)Ga_(0.25)N/Al_xGa_(1-x)N hole injection layer(HIL)for deep ultraviolet light-emitting diodes(DUV-LEDs)with an ultrathin p-GaN(4 nm)ohmic contact layer capable of emitting 277 nm.The experimental results show that the external quantum efficiency(EQE)and wall plug efficiency(WPE)of the structure graded from 0.75 to 0.55 in the HIL reach 5.49%and 5.04%,which are improved significantly by 182%and 209%,respectively,compared with the structure graded from 0.75 to 0.45,exhibiting a tremendous improvement.Both theoretical speculations and simulation results support that the larger the difference between 0.75 and x in the HIL,the higher the hole concentration that should be induced;thus,the DUV-LED has a higher internal quantum efficiency(IQE).Meanwhile,as the value of x decreases,the absorption of the DUV light emitted from the active region by the HIL is enhanced,reducing the light extraction efficiency(LEE).The IQE and LEE together affect the EQE performance of DUV-LEDs.To trade off the contradiction between the enhanced IQE and decreased LEE caused by the decrease in Al composition,the Al composition in the HIL was optimized through theoretical calculations and experiments.

High performance solar-blind deep ultraviolet photodetectors viaβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single crystalline film

We successfully fabricate a high performanceβ-phase(In_(0.09)Ga_(0.91))_(2)O_(3)single-crystalline film deep ultraviolet(DUV)solar-blind photodetector.The 2-inches high crystalline quality film is hetero-grown on the sapphire substrates using the plasma-assisted molecular beam epitaxy(PA-MBE).The smooth InGaO single crystalline film is used to construct the solar-blind DUV detector,which utilized an interdigitated Ti/Au electrode with a metal-semiconductor-metal structure.The device exhibits a low dark current of 40 pA(0 V),while its UV photon responsivity exceeds 450 A/W(50 V)at the peak wavelength of 232 nm with illumination intensity of 0.21 m W/cm^(2)and the UV/VIS rejection ratio(R232 nm/R380 nm)exceeds 4×10^(4).Furthermore,the devices demonstrate ultrafast transient characteristics for DUV signals,with fast-rising and fast-falling times of 80 ns and 420 ns,respectively.This excellent temporal dynamic behavior can be attributed to indium doping can adjust the electronic structure of Ga_(2)O_(3)alloys to enhance the performance of InGaO solar-blind detectors.Additionally,a two-dimensional DUV scanning image is captured using the InGaO photodetector as a sensor in an imaging system.Our results pave the way for future applications of two-dimensional array DUV photodetectors based on the large-scale InGaO heteroepitaxially grown alloy wide bandgap semiconductor films.

X-Ray and Ultraviolet Flares on AT Microscopii Observed by AstroSat

We present observations of the active M-dwarf binary AT Mic(dM4.5e+dM4.5e)obtained with the orbital observatory Astro Sat.During 20 ks of observations,in the far-ultraviolet(130-180 nm)and soft X-ray(0.3-7 keV)spectral ranges,we detected both quiescent emission and at least five flares on different components of the binary.The X-ray flares were typically longer than and delayed(by 5-6 minutes)with respect to their ultraviolet counterparts,in agreement with the Neupert effect.Using X-ray spectral fits,we estimated the parameters of the emitting plasma.The results indicate the presence of a hot multi-thermal corona with average temperatures in the range of~7-15 MK and emission measure of~(2.9-4.5)×10^(52)cm^(-3);both the temperature and the emission measure increased during the flares.The estimated abundance of heavy elements in the corona of AT Mic is considerably lower than at the Sun(~0.18-0.34 of the solar photospheric value);the coronal abundance increased during the flares due to chromospheric evaporation.The detected flares had the energies of~10^(31)-10^(32)erg;the energy-duration relations indicate the presence of magnetic fields stronger than in typical solar flares.

Ultraviolet light exposure and its penetrance through the eye in a porcine model

AIM:To determine the amount of ultraviolet(UV)light irradiance that various layers of the eye receive as sunlight passes through the eye,and to investigate the protective benefits of UV light-blocking contact lenses.METHODS:Twenty-four porcine eyes were prepared in one of three ways:isolated cornea,cornea and lens together,or whole eye preparation.UV light irradiance was measured with a UV-A/B light meter before and after the eye preparations were placed over the meter to measure UV light penetration in each eye structure.In the whole eye preparation,a hole was placed in the fovea to measure light as it passed through the vitreous.Subsequently,UVprotective contact lenses were placed over the structures,and UV light penetrance was measured.Measurements of UV light exposure were taken outdoors at various locations and times.RESULTS:Cornea absorbed 63.56%of UV light that reached the eye.Cornea and lens absorbed 99.34%of UV light.Whole eye absorbed 99.77%of UV light.When UV-protective contact lenses were placed,absorption was 98.90%,99.55%,and 99.87%,respectively.UV light exposure was dependent on directionality and time of day,and was greatest in areas of high albedo that reflect significant amounts of light,such as a beach.CONCLUSION:Cornea absorbs the majority of UV light that reaches the eye in this model.UV-protective contact lenses reduce UV exposure to the eye.Locations with high albedo expose the eye to higher levels of UV light.

Ultraviolet metalens and metalens array of focused vortex beams

The solar-blind ultraviolet(UV)wavelength is particularly interesting within the range of 200 nm–300 nm.Here,we propose a focusing metalens,focusing vortex beam(VB)metalens and metalens array that specifically work in the UV band to focus a beam or VB.Firstly,a high numerical aperture(NA)focusing metalens working at a wavelength of 214.2 nm was designed,and the NA reached 0.83.The corresponding conversion efficiency of the unit structure reached as high as 94%,and the full width at half maximum was only 117.2 nm.Metalenses with large NA can act as optical tweezers and can be applied to trap ultracold atoms and molecules.Secondly,a focused VB metalens in the wavelength range of200 nm–300 nm was also designed,which can convert polarized light into a VB and focus the VB simultaneously.Finally,a metalens array was developed to focus VBs with different topological charges on the same focal plane.This series of UV metalenses could be widely used in UV microscopy,photolithography,photonics communication,etc.