The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances ...The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.展开更多
The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0...The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0.7) N/5.0 nm Alx Ga_(1-x) N/8.0 nm Al_(0.3) Ga_(0.7) N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes,which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition,the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.展开更多
Using cesium lead halide perovskite nanocrystals, CsPb(Cl/Br)3, as a light absorber, we report a highly effective UV and blue light blocking film. The CsPb(Cl/Br)3 nanocrystals are well dispersed in the ethyl cellulos...Using cesium lead halide perovskite nanocrystals, CsPb(Cl/Br)3, as a light absorber, we report a highly effective UV and blue light blocking film. The CsPb(Cl/Br)3 nanocrystals are well dispersed in the ethyl cellulose(EC) matrix to compose a UV and blue light shielding film, and the absorption edge of the film is tunable by adjusting Cl to Br ratio using anion exchange. The CsPbCl2 Br-EC film exhibits a transmittance of 5% at 459 nm, 90% at 478 nm and 95% in the range of 500–800 nm, which makes it excellent for UV and blue light shielding. In addition, the as-prepared EC-CsPb(Cl/Br)3 film shows excellent photostability under UV irradiation. Results demonstrate that this EC-CsPb(Cl/Br)3 based materials with sharp absorbance edges, tunable blocking wavelength, and high photostability can be useful for the applications in UV and blue light blocking and optical filters.展开更多
Since ultraviolet(UV)light,as well as blue light,which is part of visible light,is harmful to skin,samarium-cerium compounds containing Sm_(2)O_(2)S were synthesized by co-precipitation method.This kind of compounds b...Since ultraviolet(UV)light,as well as blue light,which is part of visible light,is harmful to skin,samarium-cerium compounds containing Sm_(2)O_(2)S were synthesized by co-precipitation method.This kind of compounds blocks not only UV light,but also blue light.The minimum values of average transmittance(360-450 nm)and band gap of samarium-cerium compounds were 8.90%and 2.76 eV,respectively,which were less than 13.96%and 3.01 eV of CeO_(2).Elemental analysis(EA),X-ray diffraction(XRD),Fourier transformation infrared(FTIR),and Raman spectra determined that the samples contained Ce_(4)O_(7),Sm_(2)O_(2)S,Sm_(2)O_(3),and Sm_(2)O_(2)SO_(4).The microstructure of samples was analyzed by scanning and transmission electron microscopies(SEM and TEM).X-ray photoelectron spectrum(XPS)showed that cerium had Ce^(3+)and Ce^(4+) valence states,and oxygen was divided into lattice oxygen and oxygen vacancy,which was the direct cause of the decrease of average transmittance and band gap.展开更多
基金Project supported by the Special Strategic Emerging Industries of Guangdong Province,China(Grant No.2012A080304006)the Major Scientific and Technological Projects of Zhongshan City,Guangdong Province,China(Grant No.2014A2FC204)the Forefront of Technology Innovation and Key Technology Projects of Guangdong Province,China(Grant Nos.2014B010121001 and 2014B010119004)
文摘The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874161 and 11474105)the Science and Technology Program of Guangdong Province,China(Grant No.2017B010127001)+1 种基金the Science and Technology of Shenzhen City,China(Grant No.GJHZ20180416164721073)the Education Department Funding of Guangdong Province,China(Grant No.2017KZDXM022)
文摘The conventional stationary Al content Al GaN electron blocking layer(EBL) in ultraviolet light-emitting diode(UV LED) is optimized by employing a linearly graded Al Ga N inserting layer which is 2.0 nm Al_(0.3) Ga_(0.7) N/5.0 nm Alx Ga_(1-x) N/8.0 nm Al_(0.3) Ga_(0.7) N with decreasing value of x. The results indicate that the internal quantum efficiency is significantly improved and the efficiency droop is mitigated by using the proposed structure. These improvements are attributed to the increase of the effective barrier height for electrons and the reduction of the effective barrier height for holes,which result in an increased hole injection efficiency and a decreased electron leakage into the p-type region. In addition,the linearly graded AlGaN inserting layer can generate more holes in EBL due to the polarization-induced hole doping and a tunneling effect probably occurs to enhance the hole transportation to the active regions, which will be beneficial to the radiative recombination.
基金financially supported by the National Nature Scientific Foundation of China(No.21675133)and OESACLS201902
文摘Using cesium lead halide perovskite nanocrystals, CsPb(Cl/Br)3, as a light absorber, we report a highly effective UV and blue light blocking film. The CsPb(Cl/Br)3 nanocrystals are well dispersed in the ethyl cellulose(EC) matrix to compose a UV and blue light shielding film, and the absorption edge of the film is tunable by adjusting Cl to Br ratio using anion exchange. The CsPbCl2 Br-EC film exhibits a transmittance of 5% at 459 nm, 90% at 478 nm and 95% in the range of 500–800 nm, which makes it excellent for UV and blue light shielding. In addition, the as-prepared EC-CsPb(Cl/Br)3 film shows excellent photostability under UV irradiation. Results demonstrate that this EC-CsPb(Cl/Br)3 based materials with sharp absorbance edges, tunable blocking wavelength, and high photostability can be useful for the applications in UV and blue light blocking and optical filters.
基金financially supported by the Major State Basic Research Development Program of China(973 Program)(No.2012CBA01205)the National Natural Science Foundation of China(No.51274060)。
文摘Since ultraviolet(UV)light,as well as blue light,which is part of visible light,is harmful to skin,samarium-cerium compounds containing Sm_(2)O_(2)S were synthesized by co-precipitation method.This kind of compounds blocks not only UV light,but also blue light.The minimum values of average transmittance(360-450 nm)and band gap of samarium-cerium compounds were 8.90%and 2.76 eV,respectively,which were less than 13.96%and 3.01 eV of CeO_(2).Elemental analysis(EA),X-ray diffraction(XRD),Fourier transformation infrared(FTIR),and Raman spectra determined that the samples contained Ce_(4)O_(7),Sm_(2)O_(2)S,Sm_(2)O_(3),and Sm_(2)O_(2)SO_(4).The microstructure of samples was analyzed by scanning and transmission electron microscopies(SEM and TEM).X-ray photoelectron spectrum(XPS)showed that cerium had Ce^(3+)and Ce^(4+) valence states,and oxygen was divided into lattice oxygen and oxygen vacancy,which was the direct cause of the decrease of average transmittance and band gap.
