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Temperature Effects on Gas Sensing Properties of Electrodeposited Chlorine Doped and Undoped n-Type Cuprous Oxide Thin Films 被引量:1
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作者 Nayana Bandara Charith Jayathilaka +1 位作者 Dhammika Dissanayaka Sumedha Jayanetti 《Journal of Sensor Technology》 2014年第3期119-126,共8页
As one of the most widely used domestic fuels, the detection of possible leakages of Liquefied Petroleum (LP) gas from production plants, from cylinders during their storage, transport and usage is of utmost importanc... As one of the most widely used domestic fuels, the detection of possible leakages of Liquefied Petroleum (LP) gas from production plants, from cylinders during their storage, transport and usage is of utmost importance. This article discusses a study of the response of undoped and chlorine doped electrodeposited n-type Cuprous Oxide (Cu2O) films to of LP gas. Undoped n-type Cu2O films were fabricated in an electrolyte bath containing a solution of sodium acetate and cupric acetate whereas n-type chlorine doped Cu2O thin films were prepared by adding a 0.02 M cuprous chloride (CuCl2) into an electrolyte solution containing lactic acid, cupric sulfate and sodium hydroxide. The n-type conductivity of the deposited films was determined using spectral response measurements. The structural and morphological properties of the fabricated films were monitored using X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). Due to doping, the overall conductivity of the chlorine doped n-type Cu2O films increased by several orders of magnitude. The temperature dependent gas responses of both the undoped and chlorine doped n-type Cu2O thin films to the LP gas was monitored by measuring the electrical resistance (R), and using the contact probe method at a constant gas flow rate of 0.005 ml/s. Upon exposure to gases, both doped and undoped films showed a good response to the gas by increasing/decreasing the electrical resistance by ΔR. The undoped n-type Cu2O thin films showed a negative response (ΔR 2O thin films initially showed a positive response (ΔR > 0) to the LP gas which then reversed its sign to give a negative response which peaked at 52°C. The positive response shown by the chlorine doped Cu2O films vanished completely at 42°C. 展开更多
关键词 Liquefied Petroleum GAS ELECTRODEPOSITION CU2O Thin Films CHLORINE DOPED undoped GAS Response
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Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon
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作者 Zhao Liwei Liu Caichi Teng Xiaoyun Hao Qiuyan Sun Shilong Zhang Wei 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第z1期41-44,共4页
V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM) and energy-dispersive ... V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometer (EDS). Dislocations are the origination of V defects. Stress field around dislocations induce the concentration of C atoms, furthermore, slow growth rate on those {10-11} planes are suggested as being responsible for the initiation of V defects. The formation mechanism of V defects was discussed. 展开更多
关键词 undoped GaN VANADIUM DEFECT DISLOCATION transmission electron MICROSCOPY
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Investigation of EL2 Defect in 10 MeV Electron Irradiated Undoped Semi-insulating LEC GaAs
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作者 吴凤美 施毅 +3 位作者 陈武鸣 吴红卫 赖启基 赵周英 《Rare Metals》 SCIE EI CAS CSCD 1995年第4期249-252,共4页
InvestigationofEL2Defectin10MeVElectronIrradiatedUndopedSemi-insulatingLECGaAsWuFengmei,ShiYi,ChenWuming,WuH... InvestigationofEL2Defectin10MeVElectronIrradiatedUndopedSemi-insulatingLECGaAsWuFengmei,ShiYi,ChenWuming,WuHongweiandLaiQiji(... 展开更多
关键词 undoped SI-GAAS EL2 OTCS technique 10 MEV ELECTRON irra-diation
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Hyperfine splitting and ferromagnetism in CdS:Mn nanoparticles for optoelectronic device applications
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作者 Madhavi Sharad Darekar Praveen Beekanahalli Mokshanatha 《Journal of Semiconductors》 EI CAS CSCD 2023年第12期89-103,共15页
Manganese(Mn)doped cadmium sulphide(Cd S)nanoparticles were synthesized using a chemical method.It was possible to decrease Cd S:Mn particle size by increasing Mn concentration.Investigation techniques such as ultravi... Manganese(Mn)doped cadmium sulphide(Cd S)nanoparticles were synthesized using a chemical method.It was possible to decrease Cd S:Mn particle size by increasing Mn concentration.Investigation techniques such as ultraviolet-visible(UV-Vis)absorption spectroscopy and photoluminescence(PL)spectroscopy were used to determine optical properties of Cd S:Mn nanoparticles.Size quantization effect was observed in UV-Vis absorption spectra.Quantum efficiency for luminescence or the internal magnetic field strength was increased by doping Cd S nanoparticles with Mn element.Orange emission was observed at wavelength~630 nm due to ^(4)T_1→^(6)A_1 transition.Isolated Mn~(2+)ions arranged in tetrahedral coordination are mainly responsible for luminescence.Luminescence quenching and the effect of Mn doping on hyperfine interactions in the case of Cd S nanoparticles were also discussed.The corresponding weight percentage of Mn element actually incorporated in doping process was determined by atomic absorption spectroscopy(AAS).Crystallinity was checked and the average size of nanoparticles was estimated using the X-ray diffraction(XRD)technique.Cd S:Mn nanoparticles show ferromagnetism at room temperature.Transmission electron microscopy(TEM)images show spherical clusters of various sizes and selected area electron diffraction(SAED)patterns show the polycrystalline nature of the clusters.The electronic states of diluted magnetic semiconductors(DMS)ofⅡ-Ⅵgroup Cd S nanoparticles give them great potential for applications due to quantum confinement.In this study,experimental results and discussions on these aspects have been given. 展开更多
关键词 SYNTHESIS characterization undoped CdS nanoparticles Mn-doped CdS nanoparticles non-aqueous chemical method
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Raman Study of Defects in SI-GaAs and Se-doped Epitaxial Layer Irradiated by 10 MeV Electrons
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作者 吴凤美 立海峰 +2 位作者 陈武鸣 程光煦 杭德生 《Rare Metals》 SCIE EI CAS CSCD 1996年第1期12-15,共4页
RamanStudyofDefectsinSI-GaAsandSe-dopedEpitaxialLayerIrradiatedby10MeVElectronsWuFengmei,LiHaifeng,ChenWumin... RamanStudyofDefectsinSI-GaAsandSe-dopedEpitaxialLayerIrradiatedby10MeVElectronsWuFengmei,LiHaifeng,ChenWuming,ChengGungxuandH... 展开更多
关键词 undoped SI-GAAS Se-doped EPITAXIAL LAYER RAMAN technique 10 MEV electron-irradiation
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