Improved Polarization Retention of BiFeO3 Thin Films Using GdScO3(110)Substrates

Epitaxial ferroelectric one direction over the thin fihns on single-crystal substrates generally show a preferred domain orientation in other in demonstration of a poor polarization retention. This behavior will affect their application in nonvolatile ferroelectric random access memories where bipolar polarization states are used to store the logic 0 and 1 data. Here the retention characteristics of BiFe03 thin films with Srftu03 bottom electrodes on both GdSc03 （110） and SrTiO3 （100） substrates are studied and compared, and the results of piezoresponse force microscopy provide a long time retention property of the films on two substrates. It is found that bismuth ferrite thin films grown on GdScO3 substrates show no preferred domain variants in comparison with the preferred downward polarization orientation toward bottom electrodes on SrTi03 substrates. Tile retention test from a positive-up domain to a negative-down domain using a signal generator and an oscilloscope coincidentally shows bistable polarization states on the GdSeOa substrate over a measuring time of 500s, unlike the preferred domain orientation on SrTi03, where more than 65~o of upward domains disappear after 1 s. In addition, different sizes of domains have been written and read by using the scanning tip of piezoresponse force microscopy, where the polarization can stabilize over one month. This study paves one route to improve the polarization retention property through the optimization of the lattice-mismatched stresses between films and substrates.

Morphology and Structure of SiO_2 Film Using Thermal Oxidation Process on(111)Silicon Crystals in Dry Oxygen Atmosphere

By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.

Deposition of Amorphous Carbon Films using ECR Plasma byVarying the Substrate Temperature

Amorphous hydrogenated carbon thin films have been deposited with benzene plasma in an electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition system. The characteristic of Benzene discharge plasma has been monitored by Mast spectrometry. It shows that the majority of the plasma species in the downstream ECR Plasma with benzene as gas source are acetylene, ethylene and higher mass species. In the experiments, the effects of the substrate temperature on the deposition rates have been emphatically studied. The structures of the films were analyzed by FTIR and Ramam spectrum.The results show that when the substrate temperature rises, the deposition rate drops down, the hydrogen Foment decreases, with the higher SP3 content being presented in the film.

Tuning the Electronic Structure of Sr2IrO4 Thin Films by Bulk Electronic Doping Using Molecular Beam Epitaxy

By means of oxide molecular beam epitaxy with shutter-growth mode, we fabricate a series of electron-doped （Sr1-xLax）2IrO4 （001） （x=0, 0.05, 0.1 and 0.15） single crystalline thin films and then investigate the doping dependence of the electronic structure utilizing in-situ angle-resolved photoemission spectroscopy. It is found that with the increasing doping content, the Fermi levels of samples progressively shift upward. Prominently, an extra electron pocket crossing the Fermi level around the M point is evidently observed in the 15% nominal doping sample. Moreover, bulk-sensitive transport measurements confirm that the doping effectively suppresses the insulating state with respect to the as-grown Sr2IrO4, though the doped samples still remain insulating at low temperatures due to the localization effect possibly stemming from disorders including oxygen deficiencies. Our work provides another feasible doping method to tune electronic structure of Sr2 IrO4.

Symmetrical periods used as matching layers in multilayer thin film design

Properties of symmetrical layers as matching layers in multilayer thin film design were analyzed. A calculation method was presented to derive parameters of desired equivalent refractive index. A harmonic beam splitter was designed and fabricated to test this matching method. OCIS codes： 230.1360, 220.0220, 310.6860.

Terahertz broadband polarizer using bilayer subwavelength metal wire-grid structure on polyimide film

A tcrahcrtz （THz） broadband polarizer using bilayer subwavelength metal wire-grid structure on both sides of polyimide fihn is simulated by the finite-difference time-domain method. We amdyze tile effect of film thickness, material loss, and lateral shift between two metallic gratings on the performance of the THz polarizer. Bilayer wire-grid polarizers are fabricated by a simple way of laser induced and non-electrolytic plating with copper. The THz time-domain spectroscopy measurements show that in 0.2 1.6 THz frequency range, the extinction ratio is better than 45 dB, the average extinction ratio reaches 53 dB, and the transmittance exceeds 67%, which shows great advantage over conventional single wire-grid THz polarizer.

Generation of multi-wavelength erbium-doped fiber laser by using MoSe2 thin film as nonlinear medium and stabilizer

We experimentally demonstrate the application of MoSe2 thin film as a nonlinear medium and stabilizer to generate a multi-wavelength erbium-doped fiber laser. The cooperation of a photonic crystal fiber and a polari- zation-dependent isolator induces unstable multi-wavelength oscillations based on the nonlinear polarization rotation effect. A MoSe2 thin film is further incorporated into the cavity to achieve a stable multi-wavelength. The laser generates 7 lasings with a constant spacing of 0.47 nm at a pump power of 250 roW. The nmlti- wavelength erbium-doped fiber laser is stable with power fluctuations of less than 5 dB over 30 min.

Mass transfer mechanisms in fixed-bed adsorption of erythromycin

The equilibrium and kinetic characteristics of the adsorption of erythromycin to Sepabeads SP825 were determined.The equilibrium data in a batch system was well described by a Langmuir isotherm.The separation performance was investigated in a fixed-bed system with respect to the adsorption superficial velocity,ionic strength and pH.A mathematical model was used to simulate the mass transfer mechanism,taking film mass transfer,pore diffusion and axial dispersion into account.The model predictions were consistent with the experi-mental data and were consequently used to determine the mass transfer coefficients.