Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,eas...Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,easy triggering,and low power dissipation.We present a novel I-V characterization of the GGNMOS used as the power clamp in complementary metal-oxide-semiconductor circuits as a result of switching the ESD paths under different impact energies.This special effect could cause an unexpected latch-up or pre-failure phenomenon in some applications with relatively large capacitances from power supply to power ground,and thus should be urgently analyzed and resolved.Transmission-linepulse,human-body-modal,and light-emission tests were performed to explore the root cause.展开更多
一年生二倍体簇毛麦携带多种抗性基因,被认为是小麦抗性改良的重要基因源。本研究前期创制了一个高抗小麦条锈病的普通小麦(中国春,CS)-簇毛麦3V(3D)代换系CD-3,并将该条锈病抗性基因初步定位于簇毛麦3V染色体上。本研究以川麦60作为父...一年生二倍体簇毛麦携带多种抗性基因,被认为是小麦抗性改良的重要基因源。本研究前期创制了一个高抗小麦条锈病的普通小麦(中国春,CS)-簇毛麦3V(3D)代换系CD-3,并将该条锈病抗性基因初步定位于簇毛麦3V染色体上。本研究以川麦60作为父本,以CD-3为母本,在回交自交系BC,F2群体中筛选到一个高抗条锈病的株系,命名为1901-245,并进一步对该株系进行分子标记、焚光原位杂交(FISH)及田间条绣病抗性鉴定。分子标记和熒光原位杂交(fluorescence in situ hybridization,FISH)结果显示,1901-245携带一对簇毛麦3V染色体,丢失了一对小麦3D染色体;1901-245花粉母细胞减数分裂中染色体配对正常,单价体出现频率较低,且3V染色体未出现单价体。田间条锈病抗性鉴定结果显示,1901-245及其亲本CD-3均表现为高抗小麦条锈病,而亲本川麦60则表现为高感小麦条锈病。以上结果表明,簇毛麦3V染色体上的条锈病抗性基因在1901-245的遗传背景下能正常表达;1901-245为普通小麦-簇毛麦3V(3D)代换系材料,高抗小麦条锈病且遗传稳定,可进一步在小麦遗传改良中加以应用。另外,FISH鉴定及植株形态观察结果显示,1901-245仍含有较多亲本CD-3(CS背景)的遗传背景,因此后期可继续将1901-245与川麦60进行回交,并在后代中加大簇毛麦3V染色体的追踪力度。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61974017)。
文摘Gate-grounded n-channel metal-oxide-semiconductor(GGNMOS)devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction,easy triggering,and low power dissipation.We present a novel I-V characterization of the GGNMOS used as the power clamp in complementary metal-oxide-semiconductor circuits as a result of switching the ESD paths under different impact energies.This special effect could cause an unexpected latch-up or pre-failure phenomenon in some applications with relatively large capacitances from power supply to power ground,and thus should be urgently analyzed and resolved.Transmission-linepulse,human-body-modal,and light-emission tests were performed to explore the root cause.
文摘一年生二倍体簇毛麦携带多种抗性基因,被认为是小麦抗性改良的重要基因源。本研究前期创制了一个高抗小麦条锈病的普通小麦(中国春,CS)-簇毛麦3V(3D)代换系CD-3,并将该条锈病抗性基因初步定位于簇毛麦3V染色体上。本研究以川麦60作为父本,以CD-3为母本,在回交自交系BC,F2群体中筛选到一个高抗条锈病的株系,命名为1901-245,并进一步对该株系进行分子标记、焚光原位杂交(FISH)及田间条绣病抗性鉴定。分子标记和熒光原位杂交(fluorescence in situ hybridization,FISH)结果显示,1901-245携带一对簇毛麦3V染色体,丢失了一对小麦3D染色体;1901-245花粉母细胞减数分裂中染色体配对正常,单价体出现频率较低,且3V染色体未出现单价体。田间条锈病抗性鉴定结果显示,1901-245及其亲本CD-3均表现为高抗小麦条锈病,而亲本川麦60则表现为高感小麦条锈病。以上结果表明,簇毛麦3V染色体上的条锈病抗性基因在1901-245的遗传背景下能正常表达;1901-245为普通小麦-簇毛麦3V(3D)代换系材料,高抗小麦条锈病且遗传稳定,可进一步在小麦遗传改良中加以应用。另外,FISH鉴定及植株形态观察结果显示,1901-245仍含有较多亲本CD-3(CS背景)的遗传背景,因此后期可继续将1901-245与川麦60进行回交,并在后代中加大簇毛麦3V染色体的追踪力度。
