The effects of vanadium(V)on the microstructures and mechanical properties of the TiC cermet fusion welding interface were studied by adjusting the content of V in the self-developed flux-cored wires using metal inert...The effects of vanadium(V)on the microstructures and mechanical properties of the TiC cermet fusion welding interface were studied by adjusting the content of V in the self-developed flux-cored wires using metal inert gas arc(MIG)welding for surfacing on the TiC cermet.The results show that the increase in V content promotes the element diffusion between TiC cermet and weld metal.There are no de-fects observed in the interface,and the diffusion of elements refers to excellent metallurgical bonding.The shear strength of the fusion zone initially decreases and then increases with the increase in V content.The maximum shear strength of the TiC cermet/weld interface,reaching 552 MPa,occurred when the V content reached 0.65%.Meanwhile,the average hardness in the transition zone reached 488.2 HV0.2.展开更多
The Richtmyer-Meshkov instability ofa ‘V＇ shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V＇ shaped interface with accura...The Richtmyer-Meshkov instability ofa ‘V＇ shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V＇ shaped interface with accurate initial conditions. Five kinds of ‘V＇ shaped interfaces with different vertex angles are formed to highlight the effects of initial conditions on the flow characteristics. The results show that a spike is generated after the shock impact, and grows constantly with time. As the vertex angle increases, vortices generated on the interface become less noticeable, and the spike develops less pronouncedly. The linear growth rate of interface width after compression phase is estimated by a linear model and a revised linear model, and the latter is proven to be more effective for the interface with high initial amplitudes. The linear growth rate of interface width is, for the first time in a heavy/light interface configuration, found to be a non-monotonous function of the initial perturbation amplitude-wavelength ratio.展开更多
In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor(MIS) high electron mobility transistors(HEMTs) with an Al2 O3 gate dielectric are systematically evaluated. By frequency-dependent c...In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor(MIS) high electron mobility transistors(HEMTs) with an Al2 O3 gate dielectric are systematically evaluated. By frequency-dependent capacitance and conductance measurements, trap density and time constant at Al2 O3/AlGaN and AlGaN/GaN interface are determined.The experimental results reveal that the density of trap states and the activation energy at the Al2 O3/AlGaN interface are much higher than at the AlGaN/GaN interface. The photo-assisted capacitance-voltage measurements are performed to characterize the deep-level traps located near mid-gap at the Al2 O3/AlGaN interface, which indicates that a density of deep-level traps is lower than the density of the shallow-level states.展开更多
AgCu/Ni composite interlayer was utilized to join SiO2 glass ceramic （74. 52% SiO2-23. 40% Al2 03 -2. 08 % K2 O, wt. % ） and Ti-6Al-4V alloy by eutectic reaction. Interface structures of the joints were identified b...AgCu/Ni composite interlayer was utilized to join SiO2 glass ceramic （74. 52% SiO2-23. 40% Al2 03 -2. 08 % K2 O, wt. % ） and Ti-6Al-4V alloy by eutectic reaction. Interface structures of the joints were identified by means of TEM analysis. This joining method contains three characteristic processes, which are the melting of AgCu eutectic alloy, eutectic reaction between interlayer and Ti-6Al-4V base material and active reaction of element Ti to SiO2 glass ceramic. It is different from traditional active brazing because active element Ti totally dissolves from Ti-6Al-4 V and reacts with SiO2 glass ceramic. SiO2 glass ceramic can be joined suecessfuUy to Ti-6Al-4 V alloy by this novel bonding method and the joint exhibits high shear strength, up to 110 MPa.展开更多
V-Pd/γ-Al2O3-TiO2 catalysts with different vanadium contents were prepared by a combined sol-gel and impregnation method. X-ray diffraction （XRD）, N2 adsorption-desorption （BET）, X-ray photoelectron spectroscopy ...V-Pd/γ-Al2O3-TiO2 catalysts with different vanadium contents were prepared by a combined sol-gel and impregnation method. X-ray diffraction （XRD）, N2 adsorption-desorption （BET）, X-ray photoelectron spectroscopy （XPS） and catalytic removal of ethanol, acetaldehyde and nitrogen oxides at low temperature （〈300 ？C） were used to assess the properties of the catalysts. The results showed that the sample with 1wt% vanadium exhibited an excellent catalytic performance for simultaneous removal of ethanol, acetaldehyde and nitrogen oxides. The conversions of ethanol, acetaldehyde and nitrogen oxides at 250 ？C were 100%, 74.4% and 98.7%, respectively. V-Pd/γ-Al2O3-TiO2 catalyst with 1 wt% vanadium showed the largest surface area and higher dispersion of vanadium oxide on the catalyst surface, and possessed a larger mole fraction of V4＋ species and unique PdO species on the surface, which can be attributed to the strong synergistic effect among palladium, vanadium and the carriers. The higher activity of V-Pd/γ-Al2O3-TiO2 catalyst is related to the V4＋ and Pd2＋ species on the surface, which might be favorable for the formation of active sites.展开更多
为了降低车联网(Long Term Evolution-Vehicle to Everything,LTE-V)终端间的相互干扰并提升通信的可靠性,提出通过资源分配和拥塞控制来解决资源碰撞的问题。依据信道忙率(Channel Busy Ratio,CBR)划分拥塞等级,融合资源分配与拥塞控...为了降低车联网(Long Term Evolution-Vehicle to Everything,LTE-V)终端间的相互干扰并提升通信的可靠性,提出通过资源分配和拥塞控制来解决资源碰撞的问题。依据信道忙率(Channel Busy Ratio,CBR)划分拥塞等级,融合资源分配与拥塞控制提出相应的方案,形成资源碰撞避免机制。为了减少重选资源时发生的碰撞,提出了资源重选竞争退避机制以降低重选带来的不确定性;针对拥塞导致的碰撞,改变调制编码策略从而优化资源占用。仿真结果表明,与标准中基于感知的半持续调度(Semi-persistent Scheduling,SPS)相比,所提出的机制在传输距离为300 m时可以实现0.85以上的数据包投递率,有效减少资源碰撞,提升传输可靠性。展开更多
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideal...We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.展开更多
Nomadic Vehicular Cloud(NVC)is envisaged in this work.The predo-minant aspects of NVC is,it moves along with the vehicle that initiates it and functions only with the resources of moving vehicles on the heavy traffic ...Nomadic Vehicular Cloud(NVC)is envisaged in this work.The predo-minant aspects of NVC is,it moves along with the vehicle that initiates it and functions only with the resources of moving vehicles on the heavy traffic road without relying on any of the static infrastructure and NVC decides the initiation time of container migration using cell transmission model(CTM).Containers are used in the place of Virtual Machines(VM),as containers’features are very apt to NVC’s dynamic environment.The specifications of 5G NR V2X PC5 interface are applied to NVC,for the feature of not relying on the network coverage.Nowa-days,the peak traffic on the road and the bottlenecks due to it are inevitable,which are seen here as the benefits for VC in terms of resource availability and residual in-network time.The speed range of high-end vehicles poses the issue of dis-connectivity among VC participants,that results the container migration failure.As the entire VC participants are on the move,to maintain proximity of the containers hosted by them,estimating their movements plays a vital role.To infer the vehicle movements on the road stretch and initiate the container migration prior enough to avoid the migration failure due to vehicles dynamicity,this paper proposes to apply the CTM to the container based and 5G NR V2X enabled NVC.The simulation results show that there is a significant increase in the success rate of vehicular cloud in terms of successful container migrations.展开更多
基金supported by Henan Province Key Research and Development and Promotion Project(Grant No.201ZP20220010).
文摘The effects of vanadium(V)on the microstructures and mechanical properties of the TiC cermet fusion welding interface were studied by adjusting the content of V in the self-developed flux-cored wires using metal inert gas arc(MIG)welding for surfacing on the TiC cermet.The results show that the increase in V content promotes the element diffusion between TiC cermet and weld metal.There are no de-fects observed in the interface,and the diffusion of elements refers to excellent metallurgical bonding.The shear strength of the fusion zone initially decreases and then increases with the increase in V content.The maximum shear strength of the TiC cermet/weld interface,reaching 552 MPa,occurred when the V content reached 0.65%.Meanwhile,the average hardness in the transition zone reached 488.2 HV0.2.
基金supported by the National Natural Science Foundation of China(U1530103,11302219,and 11272308)
文摘The Richtmyer-Meshkov instability ofa ‘V＇ shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V＇ shaped interface with accurate initial conditions. Five kinds of ‘V＇ shaped interfaces with different vertex angles are formed to highlight the effects of initial conditions on the flow characteristics. The results show that a spike is generated after the shock impact, and grows constantly with time. As the vertex angle increases, vortices generated on the interface become less noticeable, and the spike develops less pronouncedly. The linear growth rate of interface width after compression phase is estimated by a linear model and a revised linear model, and the latter is proven to be more effective for the interface with high initial amplitudes. The linear growth rate of interface width is, for the first time in a heavy/light interface configuration, found to be a non-monotonous function of the initial perturbation amplitude-wavelength ratio.
基金Project supported by the Key Program of National Natural Science Foundation of China(Grant Nos.61334002 and 61634005)the National Natural Science Foundation of China(Grant Nos.61604114 and 61704124)
文摘In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor(MIS) high electron mobility transistors(HEMTs) with an Al2 O3 gate dielectric are systematically evaluated. By frequency-dependent capacitance and conductance measurements, trap density and time constant at Al2 O3/AlGaN and AlGaN/GaN interface are determined.The experimental results reveal that the density of trap states and the activation energy at the Al2 O3/AlGaN interface are much higher than at the AlGaN/GaN interface. The photo-assisted capacitance-voltage measurements are performed to characterize the deep-level traps located near mid-gap at the Al2 O3/AlGaN interface, which indicates that a density of deep-level traps is lower than the density of the shallow-level states.
基金This work was supported by National Key Science and Technology Special Projects （2014ZX04001131）, Natural Scientific Research Innovation Foundation in Harbin Institute of Technology （HIT. NSRIF. 201119） and China Postdoctoral Science Foundation （2013M541367）.
文摘AgCu/Ni composite interlayer was utilized to join SiO2 glass ceramic （74. 52% SiO2-23. 40% Al2 03 -2. 08 % K2 O, wt. % ） and Ti-6Al-4V alloy by eutectic reaction. Interface structures of the joints were identified by means of TEM analysis. This joining method contains three characteristic processes, which are the melting of AgCu eutectic alloy, eutectic reaction between interlayer and Ti-6Al-4V base material and active reaction of element Ti to SiO2 glass ceramic. It is different from traditional active brazing because active element Ti totally dissolves from Ti-6Al-4 V and reacts with SiO2 glass ceramic. SiO2 glass ceramic can be joined suecessfuUy to Ti-6Al-4 V alloy by this novel bonding method and the joint exhibits high shear strength, up to 110 MPa.
基金supported by the National Natural Science Foundation of China (No. 21073131)the Shanxi Natural Science Foundation(No. 2009011011-3)
文摘V-Pd/γ-Al2O3-TiO2 catalysts with different vanadium contents were prepared by a combined sol-gel and impregnation method. X-ray diffraction （XRD）, N2 adsorption-desorption （BET）, X-ray photoelectron spectroscopy （XPS） and catalytic removal of ethanol, acetaldehyde and nitrogen oxides at low temperature （〈300 ？C） were used to assess the properties of the catalysts. The results showed that the sample with 1wt% vanadium exhibited an excellent catalytic performance for simultaneous removal of ethanol, acetaldehyde and nitrogen oxides. The conversions of ethanol, acetaldehyde and nitrogen oxides at 250 ？C were 100%, 74.4% and 98.7%, respectively. V-Pd/γ-Al2O3-TiO2 catalyst with 1 wt% vanadium showed the largest surface area and higher dispersion of vanadium oxide on the catalyst surface, and possessed a larger mole fraction of V4＋ species and unique PdO species on the surface, which can be attributed to the strong synergistic effect among palladium, vanadium and the carriers. The higher activity of V-Pd/γ-Al2O3-TiO2 catalyst is related to the V4＋ and Pd2＋ species on the surface, which might be favorable for the formation of active sites.
文摘为了降低车联网(Long Term Evolution-Vehicle to Everything,LTE-V)终端间的相互干扰并提升通信的可靠性,提出通过资源分配和拥塞控制来解决资源碰撞的问题。依据信道忙率(Channel Busy Ratio,CBR)划分拥塞等级,融合资源分配与拥塞控制提出相应的方案,形成资源碰撞避免机制。为了减少重选资源时发生的碰撞,提出了资源重选竞争退避机制以降低重选带来的不确定性;针对拥塞导致的碰撞,改变调制编码策略从而优化资源占用。仿真结果表明,与标准中基于感知的半持续调度(Semi-persistent Scheduling,SPS)相比,所提出的机制在传输距离为300 m时可以实现0.85以上的数据包投递率,有效减少资源碰撞,提升传输可靠性。
文摘We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.
文摘Nomadic Vehicular Cloud(NVC)is envisaged in this work.The predo-minant aspects of NVC is,it moves along with the vehicle that initiates it and functions only with the resources of moving vehicles on the heavy traffic road without relying on any of the static infrastructure and NVC decides the initiation time of container migration using cell transmission model(CTM).Containers are used in the place of Virtual Machines(VM),as containers’features are very apt to NVC’s dynamic environment.The specifications of 5G NR V2X PC5 interface are applied to NVC,for the feature of not relying on the network coverage.Nowa-days,the peak traffic on the road and the bottlenecks due to it are inevitable,which are seen here as the benefits for VC in terms of resource availability and residual in-network time.The speed range of high-end vehicles poses the issue of dis-connectivity among VC participants,that results the container migration failure.As the entire VC participants are on the move,to maintain proximity of the containers hosted by them,estimating their movements plays a vital role.To infer the vehicle movements on the road stretch and initiate the container migration prior enough to avoid the migration failure due to vehicles dynamicity,this paper proposes to apply the CTM to the container based and 5G NR V2X enabled NVC.The simulation results show that there is a significant increase in the success rate of vehicular cloud in terms of successful container migrations.
