For a V-Ti-N microalloyed steel with 0.34%C-1.54%Mn,intragranular ferrite (IGF) was obtained in both isothermal austenite decomposition processes and thermomechanical processes simulating the industrial seamless tubin...For a V-Ti-N microalloyed steel with 0.34%C-1.54%Mn,intragranular ferrite (IGF) was obtained in both isothermal austenite decomposition processes and thermomechanical processes simulating the industrial seamless tubing manufacture process.Results show that with decrease of the isothermal temperature in range of 600℃ down to 450℃,not only the morphology of IGF changed from equiaxed to acicular,but also the equiaxed IGF and the acicular IGF were refined.More importantly,it is found that the amount of equiaxed ferrite increased significantly in the thermomechanical process sample water quenched from 550℃ after 800℃ deformation than that in the isothermally treated sample at 550℃ sample without hot deformation.It implies that appropriate controlled deformation with controlled cooling can significantly promote equiaxed IGF formation,and not solely rely on nucleation mechanisms related with inclusions.Hot deformation of austenite without dynamic and complete static recrystallization causes high energy regions,therefore further promotes the nucleation potency of IGF.展开更多
The precipitation of Ti(V)N(C)in high-carbon steel PD_3 during thermomechanicol treatment at austenitic temperatures after deformation has been observed.The average size of Ti(V)N(C)particles may reduce with the incre...The precipitation of Ti(V)N(C)in high-carbon steel PD_3 during thermomechanicol treatment at austenitic temperatures after deformation has been observed.The average size of Ti(V)N(C)particles may reduce with the increase of strain and the decrease of thermomechanical treatment temperature,and vise versa.The growth of Ti(V)N(C)particles at 920°C is found to be controlled by the interface reaction between precipitated particles and matrix.展开更多
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideal...We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.展开更多
基金support from Chinese National Nature Science Fund (Project No. 50271009 and No. 51071019)the Vanadium International Technical Committee (VANITEC) for their financial support
文摘For a V-Ti-N microalloyed steel with 0.34%C-1.54%Mn,intragranular ferrite (IGF) was obtained in both isothermal austenite decomposition processes and thermomechanical processes simulating the industrial seamless tubing manufacture process.Results show that with decrease of the isothermal temperature in range of 600℃ down to 450℃,not only the morphology of IGF changed from equiaxed to acicular,but also the equiaxed IGF and the acicular IGF were refined.More importantly,it is found that the amount of equiaxed ferrite increased significantly in the thermomechanical process sample water quenched from 550℃ after 800℃ deformation than that in the isothermally treated sample at 550℃ sample without hot deformation.It implies that appropriate controlled deformation with controlled cooling can significantly promote equiaxed IGF formation,and not solely rely on nucleation mechanisms related with inclusions.Hot deformation of austenite without dynamic and complete static recrystallization causes high energy regions,therefore further promotes the nucleation potency of IGF.
文摘The precipitation of Ti(V)N(C)in high-carbon steel PD_3 during thermomechanicol treatment at austenitic temperatures after deformation has been observed.The average size of Ti(V)N(C)particles may reduce with the increase of strain and the decrease of thermomechanical treatment temperature,and vise versa.The growth of Ti(V)N(C)particles at 920°C is found to be controlled by the interface reaction between precipitated particles and matrix.
文摘We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.
