In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temp...In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 ×103 and 1.27 ×104, respectively. The main electrical parameters of the MS and MIS diodes, such as the zero-bias barrier height （rbBo） and ideality factor （n）, are calculated to be 0.51 eV （I-V）, 0.53 eV （C-V）, and 4.43, and 0.65 eV （I-V）, 0.70 eV （C-V）, and 3.44, respectively. In addition, the energy density distribution profile of the interface states （Nss） is obtained from the forward bias I-V, and the series resistance （Rs） values for the two diodes are calculated from Cheung＇s method and Ohm＇s law.展开更多
The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction（HJ） diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone（PVP） layers have grown by sol-...The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction（HJ） diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone（PVP） layers have grown by sol-gel spin-coating route at 2000 rpm. The front and back metallic contacts are thermally evaporated in a vacuum at pressure of 10^-6 Torr having a diameter of 1.5 mm and a thickness of 250 nm. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Consequently, many electronic parameters, such as ideality factor, rectification coefficient, carrier concentration, series resistance, are then extracted.Based upon our results a non-ideal diode behavior is revealed and ideality factor exceeds the unity（n 〉 4）. A high rectifying（-4.6 × 10^4） device is demonstrated. According to Cheung-Cheung and Norde calculation models, the barrier height and series resitance are respectively of 0.57 eV and 30 kΩ. Ohmic and space charge limited current（SCLC） conduction mechanisms are demonstrated. Such devices will find applications as solar cell, photodiode and photoconductor.展开更多
基金supported by Gazi University Scientific Research Project (BAP),FEF. 05/2012-15
文摘In this paper, the electrical parameters of Au/n-Si （MS） and Au/Si3N4/n-Si （MIS） Schottky diodes are obtained from the forward bias current-voltage （I-V） and capacitance-voltage （C-V） measurements at room temperature. Experimental results show that the rectifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 ×103 and 1.27 ×104, respectively. The main electrical parameters of the MS and MIS diodes, such as the zero-bias barrier height （rbBo） and ideality factor （n）, are calculated to be 0.51 eV （I-V）, 0.53 eV （C-V）, and 4.43, and 0.65 eV （I-V）, 0.70 eV （C-V）, and 3.44, respectively. In addition, the energy density distribution profile of the interface states （Nss） is obtained from the forward bias I-V, and the series resistance （Rs） values for the two diodes are calculated from Cheung＇s method and Ohm＇s law.
基金supported by the Algerian Ministry of High Education and Scientific Research through the CNEPRU project No.B00L02UN310220130011,www.mesrs.dz,and www.univ-usto.dzincluded in ANVREDET PROJECT N° 18/DG/2016 “projet innovant:synthèse et caractérisation de films semiconducteurs nanostructurés et fabrication de cellule solaire” 2016,http://www.anvredet.org.dz
文摘The paper reports the fabrication and characterization of a novel Au/PVP/ZnO/Si/Al semiconductor heterojunction（HJ） diode. Both inorganic n type ZnO and organic polyvinyl pyrrolidone（PVP） layers have grown by sol-gel spin-coating route at 2000 rpm. The front and back metallic contacts are thermally evaporated in a vacuum at pressure of 10^-6 Torr having a diameter of 1.5 mm and a thickness of 250 nm. The detailed analysis of the forward and reverse bias current-voltage characteristics has been provided. Consequently, many electronic parameters, such as ideality factor, rectification coefficient, carrier concentration, series resistance, are then extracted.Based upon our results a non-ideal diode behavior is revealed and ideality factor exceeds the unity（n 〉 4）. A high rectifying（-4.6 × 10^4） device is demonstrated. According to Cheung-Cheung and Norde calculation models, the barrier height and series resitance are respectively of 0.57 eV and 30 kΩ. Ohmic and space charge limited current（SCLC） conduction mechanisms are demonstrated. Such devices will find applications as solar cell, photodiode and photoconductor.
