Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid text...Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor(FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency(21.78%) than pyramid solar cells(21.62%). Interestingly, external quantum efficiency(EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle(θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells.展开更多
We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned subst...We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO_(2) mask on the thermal stress are studied. It is found that the SiO_(2) mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO_(2) mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.展开更多
Single GaAs/Al0.5Ga0.5As V-grooved quantum wire modified by selective ion-implantation and rapid thermally annealing was investigated by spatially-resolved microphotoluminescence and magneto-resistance measurement. Sp...Single GaAs/Al0.5Ga0.5As V-grooved quantum wire modified by selective ion-implantation and rapid thermally annealing was investigated by spatially-resolved microphotoluminescence and magneto-resistance measurement. Spatially-resolved photoluminescence results indicate that the ion-implantation induced quantum well intermixing raises significantly the electron subband energies of the side quantum wells and vertical quantum wells, and more efficient accumulation of electrons in the quantum wires is achieved. Furthermore, the polarization properties of the photoluminescence from the quantum wires show large linear polarization degree up to 63%. Magneto- transport investigation on the ion implanted quantum wire samples presents the quasi-one dimensional intrinsic motion of electrons, which is important for the design and optimization of one dimensional electronic devices.展开更多
Side polished fiber(SPF)has a controllable average roughness and length of the side-polishing region,which becomes a versatile platform for integrating multiple materials to interact with the evanescent field to fabri...Side polished fiber(SPF)has a controllable average roughness and length of the side-polishing region,which becomes a versatile platform for integrating multiple materials to interact with the evanescent field to fabricate all-fiber devices and sensors.It has been widely used in couplers,filters,polarizers,optical attenuators,photodetectors,modulators,and sensors for temperature,humidity,strain,biological molecules,chemical gas,and vector magnetic monitoring.In this article,an overview of the development history,fabrication techniques,fiber types,transmission characteristics,and varied recent applications of SPFs are reviewed.Firstly,the fabrication techniques of SPFs are reviewed,including the V-groove assisted polishing technique and wheel polishing technique.Then,the different types of SPFs and their characteristics are discussed.Finally,various applications of SPFs are discussed and concluded theoretically and experimentally,including their principles and structures.When designing the device,the residual thickness and polishing lengths of the SPF need to be appropriately selected in order to obtain the best performance.Developing all-fiber devices and sensors is aimed at practical usability under harsh environments and allows to avoid the high coupling loss between optical fibers and on-chip integrated devices.展开更多
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2021B0101260001)Guangdong Basic and Applied Basic Research Foundation (Grant No.2019A1515110411)the National Natural Science Foundation of China (Grant No.61904201)。
文摘Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor(FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency(21.78%) than pyramid solar cells(21.62%). Interestingly, external quantum efficiency(EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle(θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874148,61974141,and 61674020)the Beijing Natural Science Foundation,China(Grant No.4192043)+1 种基金the State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),China(Grant No.IPOC2018ZT01)the 111 Project of China(Grant No.B07005)。
文摘We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO_(2) mask on the thermal stress are studied. It is found that the SiO_(2) mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO_(2) mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.
基金supported by the National Natural Science Foundation of China(Grant Nos.10374018 and 10321003)the Scientific Committee of Shanghai(Grant No.03DJ14001)
文摘Single GaAs/Al0.5Ga0.5As V-grooved quantum wire modified by selective ion-implantation and rapid thermally annealing was investigated by spatially-resolved microphotoluminescence and magneto-resistance measurement. Spatially-resolved photoluminescence results indicate that the ion-implantation induced quantum well intermixing raises significantly the electron subband energies of the side quantum wells and vertical quantum wells, and more efficient accumulation of electrons in the quantum wires is achieved. Furthermore, the polarization properties of the photoluminescence from the quantum wires show large linear polarization degree up to 63%. Magneto- transport investigation on the ion implanted quantum wire samples presents the quasi-one dimensional intrinsic motion of electrons, which is important for the design and optimization of one dimensional electronic devices.
基金supported by the National Natural Science Foundation of China(Grant Nos.12174155,61705086,61675092,and 62075088)National Key Research and Development Program of China(Grant Nos.2021YFB2800801 and 2018YFB1801900)+7 种基金Natural Science Foundation of Guangdong Province for Distinguished Young Scholar(Grant No.2020B1515020024)Natural Science Foundation of Guangdong Province(Grant Nos.2017A030313375and 2019A1515011380)Key-Area Research and Development Program of Guangdong Province(Grant No.2019B010138004)Project of Guangzhou Industry Leading Talents(Grant No.CXLJTD-201607)Aeronautical Science Foundation of China(Grant Nos.201708W4001 and 201808W4001)Project of STRPAT of EC Laboratory(Grant No.ZHD201902)TESTBED2(Grant No.H2020-MSCA-RISE-2019)Jinan Outstanding Young Scholar Support Program(Grant Nos.JNSBYC-2020040 and JNSBYC-2020117).
文摘Side polished fiber(SPF)has a controllable average roughness and length of the side-polishing region,which becomes a versatile platform for integrating multiple materials to interact with the evanescent field to fabricate all-fiber devices and sensors.It has been widely used in couplers,filters,polarizers,optical attenuators,photodetectors,modulators,and sensors for temperature,humidity,strain,biological molecules,chemical gas,and vector magnetic monitoring.In this article,an overview of the development history,fabrication techniques,fiber types,transmission characteristics,and varied recent applications of SPFs are reviewed.Firstly,the fabrication techniques of SPFs are reviewed,including the V-groove assisted polishing technique and wheel polishing technique.Then,the different types of SPFs and their characteristics are discussed.Finally,various applications of SPFs are discussed and concluded theoretically and experimentally,including their principles and structures.When designing the device,the residual thickness and polishing lengths of the SPF need to be appropriately selected in order to obtain the best performance.Developing all-fiber devices and sensors is aimed at practical usability under harsh environments and allows to avoid the high coupling loss between optical fibers and on-chip integrated devices.