Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid text...Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor(FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency(21.78%) than pyramid solar cells(21.62%). Interestingly, external quantum efficiency(EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle(θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells.展开更多
In order to improve the bending load-carrying capacity （BLCC） of undermatched butt joint under three-point bending load, the influence of joint geometric parameters on stress concentration factors （SCF） at the wel...In order to improve the bending load-carrying capacity （BLCC） of undermatched butt joint under three-point bending load, the influence of joint geometric parameters on stress concentration factors （SCF） at the weld bottom center and the weld toe of uudermatched butt joint with single V-groove are studied respectively based on the finite element method in this paper. Results show that the reinforcement height and the cover pass width play decisive role in the BLCC for undermatched butt joint. BLCC of undermatched butt joint can be improved by choosing the appropriate joint geometric parameters.展开更多
Background: In low-income African countries, the demand and use of plastic surgery operations including abdominoplasty, liposuction and Brazilian butt lift (BBL) are increasing. The goal of this work is to present my ...Background: In low-income African countries, the demand and use of plastic surgery operations including abdominoplasty, liposuction and Brazilian butt lift (BBL) are increasing. The goal of this work is to present my experience and the challenges of this aesthetic plastic surgery among black African women. Material and Methods: A retrospective study was conducted about the abdominoplasties, liposuctions and Brazilian butt lift (BBL) which I operated in public and private hospitals at Kinshasa (Democratic Republic of Congo) in black African women. It covers a period of 13 years, going from December 1, 2010 to December 1, 2023. For this study, I had at least 6 months period (to Juin 1, 2024) to assess the occurrence of early and late postoperative complications. Results: I performed 84 abdominoplasties, 144 liposuctions and 23 Brazilian butt lifts (BBL). The average age at the time of abdominoplasty was 44 years with extremes ranging from 26 to 55 years and a concentration of cases (60.7%) in the age group of 40 to 49 years. The age group of 20 to 29 years old represented the lowest rate of requests for abdominoplasty (4.7%). Patients with a BMI of 30 to 2 were the majority (61.9%), followed by those between 25 to 2 (29.7%). 67.8% of patients were obese (BMI ≥ 30 kg/m2). The average age at the time of liposuction was 41 years with extremes ranging from 21 years to 69 years;and more than half of cases (68%) in the age group between 30 and 49 years. As for Brazilian butt lift (BBL), the average age was 33 years with extremes ranging from 24 to 42 years and a concentration of patients (91.3%) between 20 and 39 years. The immediate postoperative complications of abdominoplasties observed were: seroma in 7% of cases, hematoma and partial infection of the surgical site in 5% of cases. Pathological scars (hypertrophic, keloid) after abdominoplasties were observed in 9% of cases. The most common complication of liposuction was contour deformity. I observed 16 patients (11.1%) with soft-tissue depressions or elevations, skin panniculus or folds. For Brazalian Butt Lift (BBL), complications like asymmetry for 2 patients (8.9%), contour irregularities for 2 patients (8.9%), and excessive fat removal for 6 patients (26%), had observed. I have not recorded any cases of death or pulmonary embolism. Conclusion: I perform aesthetic plastic surgery procedures in black African women with a high socioeconomic standard of living compared to the average of the general population. The renunciation of planned surgery is motivated by the impossibility of paying the cost of the operation as well as by popular and religious perceptions regarding cosmetic surgery. The results of these aesthetic plastic surgery procedures carried out are very satisfactory for them. The challenges to overcome are mainly threefold: the unforeseeable complications of these cosmetic plastic surgery procedures, popular and religious perceptions of cosmetic surgery as well as the poverty of the population.展开更多
We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned subst...We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO_(2) mask on the thermal stress are studied. It is found that the SiO_(2) mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO_(2) mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.展开更多
The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theor...The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.展开更多
A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposit...A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high resolution X-ray diffraction. Low temperature photoluminescence （PL） measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates.展开更多
The dissimilar friction stir welding of pure copper/1350 aluminum alloy sheet with a thickness of 3 mm was investigated. Most of the rotating pin was inserted into the aluminum alloy side through a pin-off technique, ...The dissimilar friction stir welding of pure copper/1350 aluminum alloy sheet with a thickness of 3 mm was investigated. Most of the rotating pin was inserted into the aluminum alloy side through a pin-off technique, and sound welds were obtained at a rotation speed of 1000 r/min and a welding speed of 80 mm/min. Complicated microstructure was formed in the nugget, in which vortex-like pattern and lamella structure could be found. No intermetallic compounds were found in the nugget. The hardness distribution indicates that the hardness at the copper side of the nugget is higher than that at the aluminum alloy side, and the hardness at the bottom of the nugget is generally higher than that in other regions. The ultimate tensile strength and elongation of the dissimilar welds are 152 MPa and 6.3%, respectively. The fracture surface observation shows that the dissimilar joints fail with a ductile-brittle mixed fracture mode durin~ tensile test.展开更多
基金Project supported by the Key-Area Research and Development Program of Guangdong Province,China (Grant No.2021B0101260001)Guangdong Basic and Applied Basic Research Foundation (Grant No.2019A1515110411)the National Natural Science Foundation of China (Grant No.61904201)。
文摘Silicon passivated emitter and rear contact(PERC) solar cells with V-groove texture were fabricated using maskless alkaline solution etching with in-house developed additive. Compared with the traditional pyramid texture, the V-groove texture possesses superior effective minority carrier lifetime, enhanced p–n junction quality and better applied filling factor(FF). In addition, a V-groove texture can greatly reduce the shading area and edge damage of front Ag electrodes when the V-groove direction is parallel to the gridline electrodes. Due to these factors, the V-groove solar cells have a higher efficiency(21.78%) than pyramid solar cells(21.62%). Interestingly, external quantum efficiency(EQE) and reflectance of the V-groove solar cells exhibit a slight decrease when the incident light angle(θ) is increased from 0° to 75°, which confirms the excellent quasi omnidirectionality of the V-groove solar cells. The proposed V-groove solar cell design shows a 2.84% relative enhancement of energy output over traditional pyramid solar cells.
基金The authors are grateful to be financially supported by Projects of Natural Science Foundation of Heilongjiang Province （No. E201458） , State Key Lab of Advanced Welding and Joining, Har- bin Institute of Technology （AWJ-M13-14） and Hei longjiang Prov- ince Department of Education （12541679）.
文摘In order to improve the bending load-carrying capacity （BLCC） of undermatched butt joint under three-point bending load, the influence of joint geometric parameters on stress concentration factors （SCF） at the weld bottom center and the weld toe of uudermatched butt joint with single V-groove are studied respectively based on the finite element method in this paper. Results show that the reinforcement height and the cover pass width play decisive role in the BLCC for undermatched butt joint. BLCC of undermatched butt joint can be improved by choosing the appropriate joint geometric parameters.
文摘Background: In low-income African countries, the demand and use of plastic surgery operations including abdominoplasty, liposuction and Brazilian butt lift (BBL) are increasing. The goal of this work is to present my experience and the challenges of this aesthetic plastic surgery among black African women. Material and Methods: A retrospective study was conducted about the abdominoplasties, liposuctions and Brazilian butt lift (BBL) which I operated in public and private hospitals at Kinshasa (Democratic Republic of Congo) in black African women. It covers a period of 13 years, going from December 1, 2010 to December 1, 2023. For this study, I had at least 6 months period (to Juin 1, 2024) to assess the occurrence of early and late postoperative complications. Results: I performed 84 abdominoplasties, 144 liposuctions and 23 Brazilian butt lifts (BBL). The average age at the time of abdominoplasty was 44 years with extremes ranging from 26 to 55 years and a concentration of cases (60.7%) in the age group of 40 to 49 years. The age group of 20 to 29 years old represented the lowest rate of requests for abdominoplasty (4.7%). Patients with a BMI of 30 to 2 were the majority (61.9%), followed by those between 25 to 2 (29.7%). 67.8% of patients were obese (BMI ≥ 30 kg/m2). The average age at the time of liposuction was 41 years with extremes ranging from 21 years to 69 years;and more than half of cases (68%) in the age group between 30 and 49 years. As for Brazilian butt lift (BBL), the average age was 33 years with extremes ranging from 24 to 42 years and a concentration of patients (91.3%) between 20 and 39 years. The immediate postoperative complications of abdominoplasties observed were: seroma in 7% of cases, hematoma and partial infection of the surgical site in 5% of cases. Pathological scars (hypertrophic, keloid) after abdominoplasties were observed in 9% of cases. The most common complication of liposuction was contour deformity. I observed 16 patients (11.1%) with soft-tissue depressions or elevations, skin panniculus or folds. For Brazalian Butt Lift (BBL), complications like asymmetry for 2 patients (8.9%), contour irregularities for 2 patients (8.9%), and excessive fat removal for 6 patients (26%), had observed. I have not recorded any cases of death or pulmonary embolism. Conclusion: I perform aesthetic plastic surgery procedures in black African women with a high socioeconomic standard of living compared to the average of the general population. The renunciation of planned surgery is motivated by the impossibility of paying the cost of the operation as well as by popular and religious perceptions regarding cosmetic surgery. The results of these aesthetic plastic surgery procedures carried out are very satisfactory for them. The challenges to overcome are mainly threefold: the unforeseeable complications of these cosmetic plastic surgery procedures, popular and religious perceptions of cosmetic surgery as well as the poverty of the population.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874148,61974141,and 61674020)the Beijing Natural Science Foundation,China(Grant No.4192043)+1 种基金the State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),China(Grant No.IPOC2018ZT01)the 111 Project of China(Grant No.B07005)。
文摘We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform,which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the Ga As layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO_(2) mask on the thermal stress are studied. It is found that the SiO_(2) mask and V-groove play a crucial role in the stress of the Ga As layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO_(2) mask are both 100 nm, the Ga As layer is subjected to the minimum stress. Furthermore,Comparing with the planar substrate, the average stress of the Ga As epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality Ga As films on patterned Si substrates.
文摘The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.
基金Supported by the National Science and Technology Major Project of China under Grant No 2011ZX02708
文摘A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si（O01） substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and high resolution X-ray diffraction. Low temperature photoluminescence （PL） measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates.
基金Project (2009ZM0264) supported by the Fundamental Research Funds for the Central Universities,China
文摘The dissimilar friction stir welding of pure copper/1350 aluminum alloy sheet with a thickness of 3 mm was investigated. Most of the rotating pin was inserted into the aluminum alloy side through a pin-off technique, and sound welds were obtained at a rotation speed of 1000 r/min and a welding speed of 80 mm/min. Complicated microstructure was formed in the nugget, in which vortex-like pattern and lamella structure could be found. No intermetallic compounds were found in the nugget. The hardness distribution indicates that the hardness at the copper side of the nugget is higher than that at the aluminum alloy side, and the hardness at the bottom of the nugget is generally higher than that in other regions. The ultimate tensile strength and elongation of the dissimilar welds are 152 MPa and 6.3%, respectively. The fracture surface observation shows that the dissimilar joints fail with a ductile-brittle mixed fracture mode durin~ tensile test.
