Electronic and transport properties of V-shaped defect zigzag MoS_2 nanoribbons

Based on the nonequilibrium Green＇s function （NEGF） in combination with density functional theory （DFT） calcu- lations, we study the electronic structures and transport properties of zigzag MoS2 nanoribbons （ZMNRs） with V-shaped vacancy defects on the edge. The vacancy formation energy results show that the zigzag vacancy is easier to create on the edge of ZMNR than the armchair vacancy. Both of the defects can make the electronic band structures of ZMNRs change from metal to semiconductor. The calculations of electronic transport properties depict that the currents drop off clearly and rectification ratios increase in the defected systems. These effects would open up possibilities for their applications in novel nanoelectronic devices.

Evidence of the Precipitates in the V-Shaped Defects of Undoped GaN

Precipitates in undoped GaN epilayers with specular surfaces grown on sapphire substrates were imaged by super high-resolution electron microscopy(HREM)and analyzed by energy-dispersive x-ray spectrometry(EDXS).The HREM images of the precipitates appeared more or less hexagonal intersection with several ten-nanometer large,which is the same as that of the V-shape defects.The EDXS spectra of the precipitates were mainly composed of the characteristic x-rays of oxygen,carbon,and gallium elements.The results suggest that the precipitates nucleate at the pinholes of the V-shape cavities and grow as the GaN growth.

V-Shaped Monopole Antenna with Chichena Itzia Inspired Defected Ground Structure for UWB Applications

Due to rapid growth in wireless communication technology,higher bandwidth requirement for advance telecommunication systems,capable of operating on two or higher bands with higher channel capacities and minimum distortion losses is desired.In this paper,a compact Ultra-Wideband(UWB)V-shaped monopole antenna is presented.UWB response is achieved by modifying the ground plane with Chichen Itzia inspired rectangular staircase shape.The proposed V-shaped is designed by incorporating a rectangle,and an inverted isosceles triangle using FR4 substrate.The size of the antenna is 25 mm×26 mm×1.6 mm.The proposed V-shaped monopole antenna produces bandwidth response of 3 GHz Industrial,Scientific,and Medical(ISM),Worldwide Interoperability for Microwave Access(WiMAX),(IEEE 802.11/HIPERLAN band,5G sub 6 GHz)which with an additional square cut amplified the bandwidth response up to 8 GHz ranging from 3.1 GHz to 10.6 GHz attaining UWB defined by Federal Communications Commission(FCC)with a maximum gain of 3.83 dB.The antenna is designed in Ansys HFSS.Results for key performance parameters of the antenna are presented.The measured results are in good agreement with the simulated results.Due to flat gain,uniform group delay,omni directional radiation pattern characteristics and well-matched impedance,the proposed antenna is suitable for WiMAX,ISM and heterogeneous wireless systems.

Cryogenic springback of 2219-W aluminum alloy sheet through V-shaped bending

A V-shaped bending device was established to evaluate the effects of temperature and bending fillet radius on springback behavior of 2219-W aluminum alloy at cryogenic temperatures.The cryogenic springback mechanism was elucidated through mechanical analyses and numerical simulations.The results indicated that the springback angle at cryogenic temperatures was greater than that at room temperature.The springback angle increased further as the temperature returned to ambient conditions,attributed to the combined effects of the “dual enhancement effect” and thermal expansion.Notably,a critical fillet radius made the springback angle zero for 90° V-shaped bending.The critical fillet radius at cryogenic temperatures was smaller than that at room temperature,owing to the influence of temperature variations on the bending moment ratio between the forward bending section at the fillet and the reverse bending section of the straight arm.

Defect Engineering:Can it Mitigate Strong Coulomb Effect of Mg^(2+)in Cathode Materials for Rechargeable Magnesium Batteries?

Rechargeable magnesium batteries(RMBs)have been considered a promising“post lithium-ion battery”system to meet the rapidly increasing demand of the emerging electric vehicle and grid energy storage market.However,the sluggish diffusion kinetics of bivalent Mg^(2+)in the host material,related to the strong Coulomb effect between Mg^(2+)and host anion lattices,hinders their further development toward practical applications.Defect engineering,regarded as an effective strategy to break through the slow migration puzzle,has been validated in various cathode materials for RMBs.In this review,we first thoroughly understand the intrinsic mechanism of Mg^(2+)diffusion in cathode materials,from which the key factors affecting ion diffusion are further presented.Then,the positive effects of purposely introduced defects,including vacancy and doping,and the corresponding strategies for introducing various defects are discussed.The applications of defect engineering in cathode materials for RMBs with advanced electrochemical properties are also summarized.Finally,the existing challenges and future perspectives of defect engineering in cathode materials for the overall high-performance RMBs are described.

An experimental investigation of the fracturing behaviour of rock-like materials containing two V-shaped parallelogram flaws

The distribution characteristics and evolution law of rock mass fissures induced by mining are a key scientific issue in the study of deep rock mechanics.In this study,a series of uniaxial compression experiments was conducted on rock-like specimens containing double V-shaped prefabricated fissures at dip angles ofα=β=45°,α=45°<b=60°,α=β=60°,andα=60°<β=75°with a rock mechanics servocontrolled testing system.According to the experimental results,the effects of the dip angles of the double V-shaped prefabricated flaws with the same area on the mechanical parameters and fracturing process of the specimens were analysed in detail.Additionally,the crack initiation stress presented a nearly linear growth trend,which is generally similar to that of the crack peak stress with increasing flaw dip angle.By applying photographic monitoring to the crack initiation,propagation,coalescence,and failure modes in rock-like specimens,it was easily seen that the V-shaped flaw properties slightly influence the crack initiation positions but significantly influence the crack trajectories.The crack failure modes can be summarized into two distinct types.The study reported herein can provide a better understanding of the evolution of double V-shaped prefabricated fissures induced by coal mining.

RIGID-PLASTIC MECHANICAL MODEL FOR THE FORGING METHOD WITH HORIZONTAL V-SHAPED ANVIL

In order to decrease the anisotropy of mechanical properties, the rigid-plastic mechanical model for the forging method with horizontal V-shaped anvil is presented. The forging method, through the change of anvils shape, is able to control fibrous tissue direction, to improve the anisotropy of mechanical properties of axial forgings, to realize uniform forging. Therefore, the forging method can overcome the defect that conventional forging methods produce. The mechanism of the forging method with horizontal V-shaped anvil and the process of metal deformation are analyzed. The agreement of theoretical analysis with experimental study verifies the fact that the forging method with horizontal V-shaped anvil can control effectively the mechanical properties of axial forgings.

Scattering of SH waves induced by a symmetrical V-shaped canyon: a unified analytical solution

This paper reports a series solution of wave functions for two-dimensional scattering and diffraction of plane SH waves induced by a symmetrical V-shaped canyon with different shape ratios. A half-space with a symmetrical V-shaped canyon is divided into two sub-regions by using a circular-arc auxiliary boundary. The two sub-regions are represented by global and local cylindrical coordinate systems, respectively. In each coordinate system, the wave field satisfying the Helmholtz equation is represented by the separation of variables method, in terms of the series of both Bessel functions and Hankel functions with unknown complex coefficients. Then, the two wave fields are described in the local coordinate system using the Graf addition theorem. Finally, the unknown coefficients are sought by satisfying the continuity conditions of the auxiliary boundary. To consider the phase characteristics of the wave scattering, a parametric analysis is carried out in the time domain by assuming an incident signal of the Ricker type. Surface and subsurface transient responses demonstrate the characteristics and mechanisms of wave propagating and scattering.

Seismic analysis of high-speed railway irregular bridge–track system considering V-shaped canyon effect

To explore the effect of canyon topography on the seismic response of railway irregular bridge-track system that crosses a V-shaped canyon, seismic ground motions of the horizontal site and V-shaped canyon site were simulated through theoretical analysis with 12 earthquake records selected from the Pacific Earthquake Engineering Research Center(PEER) Strong Ground Motion Database matching the site condition of the bridge.Nonlinear seismic response analyses of an existing 11-span irregular simply supported railway bridge-track system were performed under the simulated spatially varying ground motions. The effects of the V-shaped canyon topography on the peak ground acceleration at bridge foundations and seismic responses of the bridge-track system were analyzed. Comparisons between the results of horizontal and V-shaped canyon sites show that the top relative displacement between adjacent piers at the junction of the incident side and the back side of the V-shaped site is almost two times that of the horizontal site, which also determines the seismic response of the fastener. The maximum displacement of the fastener occurs in the V-shaped canyon site and is 1.4 times larger than that in the horizontal site. Neglecting the effect of V-shaped canyon leads to the inappropriate assessment of the maximum seismic response of the irregular high-speed railway bridge-track system. Moreover, engineers should focus on the girder end to the left or right of the two fasteners within the distance of track seismic damage.

Near-source topographic effect on seismic responses of a multi-span continuous railway bridge crossing a symmetrical V-shaped canyon

Past earthquakes have revealed that topographic features have significant impacts on the characteristics of ground motions,which may cause the amplification and de-amplification of input seismic waves.The topographic effect with the assumption of plane seismic waves on the seismic responses of bridges has been investigated in the existing literature;however,the influence of near-source topographic effects has not been thoroughly understood.The objective of this study is to numerically explore the near-source topographic effects on the seismic behaviors of an existing railway bridge crossing a symmetrical V-shaped canyon.The influence of the source of incident waves is estimated.Numerical results demonstrate that the topographic effects can noticeably amplify the seismic responses of the bridge.Compared to the bridge without crossing a canyon,the peak displacements of the girder,pier,and bearing in the case of the canyon crossing bridge increase by 15.2%,2.9%−14.5%,and 24.2%−229.6%,respectively.The piers at the illuminated side of the canyon experience larger seismic responses compared to the piers at the shaded side of the canyon due to the unequal motion amplitudes at each support.As the source-to-canyon distance increases,the seismic responses of the piers show an increasing trend.

Controlling deflection of long steel I-shaped girder bridge using two V-shaped pre-tensioning cables

Despite appropriate design of girder under bending and shear,the deflection of long steel girders usually exceeds the allowable range,and therefore the structural designers encounter challenges in this regard.Considering significant features of the cables,namely,low weight,small cross section,and high tensile strength,they are used in this research so as to control the deflection of long girder bridges,rather than increasing their heights.In this study,theoretical relations are developed to calculate the increase in pre-tensioning force of V-shaped steel cables under external loading as well as the deflection of steel girder bridges with V-shaped cables and different support conditions.To verify the theoretical relations,the steel girder bridge is modeled in the finite element ABAQUS software with different support conditions without cable and with V-shaped cables.The obtained results show that the theoretical relations can appropriately predict the deflection of girder bridge with V-shaped cables and different support conditions.In this study,the effects of the distance from support on the deflection of mid span are studied in both simply supported and fixed supported girder bridge so as to obtain the appropriate distance from support causing the minimum deflection.

Decade Milestone Advancement of Defect-Engineered g-C_(3)N_(4) for Solar Catalytic Applications

Over the past decade, graphitic carbon nitride(g-C_(3)N_(4)) has emerged as a universal photocatalyst toward various sustainable carbo-neutral technologies. Despite solar applications discrepancy, g-C_(3)N_(4) is still confronted with a general fatal issue of insufficient supply of thermodynamically active photocarriers due to its inferior solar harvesting ability and sluggish charge transfer dynamics. Fortunately, this could be significantly alleviated by the “all-in-one” defect engineering strategy, which enables a simultaneous amelioration of both textural uniqueness and intrinsic electronic band structures. To this end, we have summarized an unprecedently comprehensive discussion on defect controls including the vacancy/non-metallic dopant creation with optimized electronic band structure and electronic density, metallic doping with ultraactive coordinated environment(M–N_(x), M–C_(2)N_(2), M–O bonding), functional group grafting with optimized band structure, and promoted crystallinity with extended conjugation π system with weakened interlayered van der Waals interaction. Among them, the defect states induced by various defect types such as N vacancy, P/S/halogen dopants, and cyano group in boosting solar harvesting and accelerating photocarrier transfer have also been emphasized. More importantly, the shallow defect traps identified by femtosecond transient absorption spectra(fs-TAS) have also been highlighted. It is believed that this review would pave the way for future readers with a unique insight into a more precise defective g-C_(3)N_(4) “customization”, motivating more profound thinking and flourishing research outputs on g-C_(3)N_(4)-based photocatalysis.

New Methods of Determining the Mixed Mode Stress Intensity Factors for V-Shaped Notch

In this paper, on the basis of the stress field given by D.H.Chen, three new photoelastic methods are developed for determining the stress intensity factors K1 and K2 of V-shaped notch. Some photoelastic experiments are performed on a skew -symmetric 45° notch. Measurements of the coordinates components of r,θand fringe order N are made for progressively smaller fringes and used in the proposed methods to solve K1 and K2.Plots of apparent K vs. r/l are made and extrapolated to the notch tip to yield the true values of K1 and K2.The results obtained by the three methods are very close to each other. When the notch problem is simplified as a crack problem, the corresponding equation is identical to the one proposed by D.G. Smith, which shows that the proposed methods are applicable for both notch and crack problems.

Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN- based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaNbased light-emitting diodes （LEDs） with surface V-pits in different densities and regions were grown by metal-organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

Wave Pressure Acting on V-Shaped Floating Breakwater in Random Seas

Wave pressure on the wet surface of a V-shaped floating breakwater in random seas is investigated. Considering the diffraction effect, the unit velocity potential caused by the single regular waves around the breakwater is solved using the finite-depth Green function and boundary element method, in which the Green function is solved by integral method. The Response-Amplitude Operator(RAO) of wave pressure is acquired according to the Longuet-Higgins' wave model and the linear Bernoulli equation. Furthermore, the wave pressure's response spectrum is calculated according to the wave spectrum by discretizing the frequency domain. The wave pressure's characteristic value corresponding to certain cumulative probability is determined according to the Rayleigh distribution of wave heights. The numerical results and field test results are compared, which indicates that the wave pressure calculated in random seas agrees with that of field measurements. It is found that the bigger angle between legs will cause the bigger pressure response, while the increase in leg length does not influence the pressure significantly. The pressure at the side of head sea is larger than that of back waves. When the incident wave angle changes from 0? to 90?, the pressure at the side of back waves decreases clearly, while at the side of head sea, the situation is more complicated and there seems no obvious tendency. The concentration of wave energy around low frequency(long wavelength) will induce bigger wave pressure, and more attention should be paid to this situation for the structure safety.

Construction of a 3D Co(Ⅱ) Framework Based on Two Types of V-shaped Bidentate Ligands

A three-dimensional （3D） coordination polymer {[Co（bdc）（dpb）]·H2O}n （1） was prepared by solvothermal reaction of 1,3-dipyridyl benzene （dpb） with deprotonated 1,3-benzene- dicarboxylate （H2bdc）, and was characterized by elemental analysis, IR spectroscopy, and X-ray single-crystal diffraction. It crystallizes in the monoclinic system, space group C2/c with α = 15.478（6）, b = 12.865（5）, c = 24.091（10） ？, β = 95.599（5）°, V = 4774（3） ？3, C24H18CoN2O5, Mr = 473.34, Dc = 1.267 g/cm3, F（000） = 1864.0, μ = 0.748 mm-1 and Z = 8. Each Co（II） ion links three bdc2- anions to form an infinitely 1D ladder-shaped chain containing binuclear [（COO）Co]2 cluster, and dpb links adjacent 1D chains to form a 3D pcu framework. In addition, the UV-vis of 1 was also studied.

Heterointerface Engineering-Induced Oxygen Defects for the Manganese Dissolution Inhibition in Aqueous Zinc Ion Batteries

Manganese-based material is a prospective cathode material for aqueous zinc ion batteries(ZIBs)by virtue of its high theoretical capacity,high operating voltage,and low price.However,the manganese dissolution during the electrochemical reaction causes its electrochemical cycling stability to be undesirable.In this work,heterointerface engineering-induced oxygen defects are introduced into heterostructure MnO_(2)(δa-MnO_(2))by in situ electrochemical activation to inhibit manganese dissolution for aqueous zinc ion batteries.Meanwhile,the heterointerface between the disordered amorphous and the crystalline MnO_(2)ofδa-MnO_(2)is decisive for the formation of oxygen defects.And the experimental results indicate that the manganese dissolution ofδa-MnO_(2)is considerably inhibited during the charge/discharge cycle.Theoretical analysis indicates that the oxygen defect regulates the electronic and band structure and the Mn-O bonding state of the electrode material,thereby promoting electron transport kinetics as well as inhibiting Mn dissolution.Consequently,the capacity ofδa-MnO_(2)does not degrade after 100 cycles at a current density of 0.5 Ag^(-1)and also 91%capacity retention after 500cycles at 1 Ag^(-1).This study provides a promising insight into the development of high-performance manganese-based cathode materials through a facile and low-cost strategy.

Impact Analysis of Microscopic Defect Types on the Macroscopic Crack Propagation in Sintered Silver Nanoparticles

Sintered silver nanoparticles(AgNPs)arewidely used in high-power electronics due to their exceptional properties.However,the material reliability is significantly affected by various microscopic defects.In this work,the three primary micro-defect types at potential stress concentrations in sintered AgNPs are identified,categorized,and quantified.Molecular dynamics(MD)simulations are employed to observe the failure evolution of different microscopic defects.The dominant mechanisms responsible for this evolution are dislocation nucleation and dislocation motion.At the same time,this paper clarifies the quantitative relationship between the tensile strain amount and the failure mechanism transitions of the three defect types by defining key strain points.The impact of defect types on the failure process is also discussed.Furthermore,traction-separation curves extracted from microscopic defect evolutions serve as a bridge to connect the macro-scale model.The validity of the crack propagation model is confirmed through tensile tests.Finally,we thoroughly analyze how micro-defect types influence macro-crack propagation and attempt to find supporting evidence from the MD model.Our findings provide a multi-perspective reference for the reliability analysis of sintered AgNPs.

Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells

Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the fiat quantum wells. As the barrier thickness of the fiat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.

Study on a W-band modified V-shaped microstrip meander-line traveling-wave tube

The study on a miniaturized, low-voltage, wide-bandwidth, high-efficiency modified V-shaped microstrip meander-line slow-wave structure is presented. This structure is evolved from the original U-shaped microstrip meander-line slow-wave structure, combining the advantages of a traditional microstrip and a rectangular helix. In this paper, simulations of the electromagnetic characteristics and the beam-wave interaction of this structure are carried out. Our study shows that when the design voltage and the current of a sheet electron beam are set to be 4700 V and 100 mA, respectively, this miniature millimeter-wave power amplifier is capable of delivering 160-W output power with a corresponding gain of 37.3 dB and a maximum interaction efficiency of 34% at 97 GHz.