Targets for low-adiabat direct-drive-implosion experiments on OMEGA must meet rigorous specifications and tight tolerances on the diameter,wall thickness,wall-thickness uniformity,and presence of surface features.Of t...Targets for low-adiabat direct-drive-implosion experiments on OMEGA must meet rigorous specifications and tight tolerances on the diameter,wall thickness,wall-thickness uniformity,and presence of surface features.Of these,restrictions on the size and number of defects(bumps and depressions)on the surface are the most challenging.The properties of targets that are made using vapor-deposition and solution-based microencapsulation techniques are reviewed.Targets were characterized using confocal microscopy,bright-and dark-field microscopy,atomic force microscopy,electron microscopy,and interferometry.Each technique has merits and limitations,and a combination of these techniques is necessary to adequately characterize a target.The main limitation with the glow-discharge polymerization(GDP)method for making targets is that it produces hundreds of domes with a lateral dimension of 0.7-2 μm.Polishing these targets reduces the size of some but not all domes,but it adds scratches and grooves to the surface.Solution-made polystyrene shells lack the dome features of GDP targets but have hundreds of submicrometer-size voids throughout the wall of the target;a few of these voids can be as large as~12 μm at the surface.展开更多
A new mathematical method of measuring electron emission induced by low energy ions from solids is described and used to calculate secondary electron emission according to the recorded pulse-height spectra of ions and...A new mathematical method of measuring electron emission induced by low energy ions from solids is described and used to calculate secondary electron emission according to the recorded pulse-height spectra of ions and ultraviolet (UV) photons. Using the UV single secondary electron spectra, we predict the shape of many secondary electron distributions under consideration of detection efficiency of MCP detector. These calculated distributions allow us to characterize the secondary electrons yield, and to give a secondary electron distribution for measured data. It seems rather feasible to determine secondary electron yield emitted by low energy ions at very low ion uxes.展开更多
Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high ...Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.展开更多
InGaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-resolution x-ray rocking curves and transmission electron...InGaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-resolution x-ray rocking curves and transmission electron microscopy (TEM) are adopted to characterize the film quality. Compared with the MQWs grown on planar sapphire, the sample grown on grooved sapphire shows better crystalline quality: a remarkable reduction of dislocation densities is achieved. Meanwhile, the MQWs grown on grooved sapphire show two times larger PL intensity at room temperature. Temperature-dependent PL measurements are adopted to investigate the luminescence properties. The luminescence thermal quenching based on a fit to the Arrhenius plot of the normalized integrated PL intensity over the measured temperature range suggests that the nonradiative recombination centres (NRCs) are greatly reduced for the sample grown on grooved sapphire. We assume that the reduction of dislocations which act as NRCs is the main reason for the sample grown on pattern sapphire having higher PL intensity.展开更多
A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substr...A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased substrates by condensing the Ti^+ ion beam in about 300 eV N2^+ nitrogen ion bombardment. In the latter case, the film stoichiometry is varied from an N:Ti ratio of 0.6-1.1 by controlling the arrival rates of Ti and nitrogen ions. Meanwhile, simple models are used to describe the evolution of compressive stress as function of the arrival ratio and the composition of the ion-assisted TiN films.展开更多
With the increasing availability of large-area graphene, the ability to rapidly and accurately assess the quality of the electrical properties has become critically important. For practical applications, spatial varia...With the increasing availability of large-area graphene, the ability to rapidly and accurately assess the quality of the electrical properties has become critically important. For practical applications, spatial variability in carrier density and carrier mobility must be controlled and minimized. We present a simple framework for assessing the quality and homogeneity of large-area graphene devices. The field effect in both exfoliated graphene devices encapsulated in hexagonal boron nitride and chemical vapor-deposited (CVD) devices was measured in dual current-voltage configurations and used to derive a single, gate-dependent effective shape factor, t, for each device, β is a sensitive indicator of spatial homogeneity that can be obtained from samples of arbitrary shape. All 50 devices investigated in this study show a variation (up to tenfold) in β as a function of the gate bias. Finite element simulations suggest that spatial doping inhomogeneity, rather than mobility inhomogeneity, is the primary cause of the gate dependence of β, and that measurable variations of β can be caused by doping variations as small as 10^10 cm^-2. Our results suggest that local variations in the position of the Dirac point alter the current flow and thus the effective sample shape as a function of the gate bias. We also found that such variations lead to systematic errors in carrier mobility calculations, which can be revealed by inspecting the corresponding β factor.展开更多
基金This material is based upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944the University of Rochester,and the New York State Energy Research and Development Authority.
文摘Targets for low-adiabat direct-drive-implosion experiments on OMEGA must meet rigorous specifications and tight tolerances on the diameter,wall thickness,wall-thickness uniformity,and presence of surface features.Of these,restrictions on the size and number of defects(bumps and depressions)on the surface are the most challenging.The properties of targets that are made using vapor-deposition and solution-based microencapsulation techniques are reviewed.Targets were characterized using confocal microscopy,bright-and dark-field microscopy,atomic force microscopy,electron microscopy,and interferometry.Each technique has merits and limitations,and a combination of these techniques is necessary to adequately characterize a target.The main limitation with the glow-discharge polymerization(GDP)method for making targets is that it produces hundreds of domes with a lateral dimension of 0.7-2 μm.Polishing these targets reduces the size of some but not all domes,but it adds scratches and grooves to the surface.Solution-made polystyrene shells lack the dome features of GDP targets but have hundreds of submicrometer-size voids throughout the wall of the target;a few of these voids can be as large as~12 μm at the surface.
文摘A new mathematical method of measuring electron emission induced by low energy ions from solids is described and used to calculate secondary electron emission according to the recorded pulse-height spectra of ions and ultraviolet (UV) photons. Using the UV single secondary electron spectra, we predict the shape of many secondary electron distributions under consideration of detection efficiency of MCP detector. These calculated distributions allow us to characterize the secondary electrons yield, and to give a secondary electron distribution for measured data. It seems rather feasible to determine secondary electron yield emitted by low energy ions at very low ion uxes.
基金Supported by the National Natural Science Foundation of China under Grant No 90607023, the Shanghai Pujiang Programme under Grant No 05PJ14017, and the SRF for R0CS, SEM, and the Micro/Nano-electronics Science and Technology Innovation Platform (985), and the Ministry of Education of China in the International Research Training Group (Materials and Concepts for Advanced Interconnects).
文摘Metal-insulator-metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.
基金Support by the National High Technology Research and Development Programme of China under Grant Nos 2001AA313120, the National Natural Science Foundation of China under Grant Nos 10474126 and 10574148, and the National Key Basic Research and Development Programme of China under Grant No 2002CB311900.
文摘InGaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-resolution x-ray rocking curves and transmission electron microscopy (TEM) are adopted to characterize the film quality. Compared with the MQWs grown on planar sapphire, the sample grown on grooved sapphire shows better crystalline quality: a remarkable reduction of dislocation densities is achieved. Meanwhile, the MQWs grown on grooved sapphire show two times larger PL intensity at room temperature. Temperature-dependent PL measurements are adopted to investigate the luminescence properties. The luminescence thermal quenching based on a fit to the Arrhenius plot of the normalized integrated PL intensity over the measured temperature range suggests that the nonradiative recombination centres (NRCs) are greatly reduced for the sample grown on grooved sapphire. We assume that the reduction of dislocations which act as NRCs is the main reason for the sample grown on pattern sapphire having higher PL intensity.
文摘A straight magnetic filtering arc source is used to deposit thin films of titanium nitride. The properties of the films depend strongly on the deposition process. TiN films can be deposited directly onto heated substrates in a nitrogen atmosphere or onto unbiased substrates by condensing the Ti^+ ion beam in about 300 eV N2^+ nitrogen ion bombardment. In the latter case, the film stoichiometry is varied from an N:Ti ratio of 0.6-1.1 by controlling the arrival rates of Ti and nitrogen ions. Meanwhile, simple models are used to describe the evolution of compressive stress as function of the arrival ratio and the composition of the ion-assisted TiN films.
文摘With the increasing availability of large-area graphene, the ability to rapidly and accurately assess the quality of the electrical properties has become critically important. For practical applications, spatial variability in carrier density and carrier mobility must be controlled and minimized. We present a simple framework for assessing the quality and homogeneity of large-area graphene devices. The field effect in both exfoliated graphene devices encapsulated in hexagonal boron nitride and chemical vapor-deposited (CVD) devices was measured in dual current-voltage configurations and used to derive a single, gate-dependent effective shape factor, t, for each device, β is a sensitive indicator of spatial homogeneity that can be obtained from samples of arbitrary shape. All 50 devices investigated in this study show a variation (up to tenfold) in β as a function of the gate bias. Finite element simulations suggest that spatial doping inhomogeneity, rather than mobility inhomogeneity, is the primary cause of the gate dependence of β, and that measurable variations of β can be caused by doping variations as small as 10^10 cm^-2. Our results suggest that local variations in the position of the Dirac point alter the current flow and thus the effective sample shape as a function of the gate bias. We also found that such variations lead to systematic errors in carrier mobility calculations, which can be revealed by inspecting the corresponding β factor.