We experimentally demonstrate an electrically triggered terahertz(THz) dual-band tunable band-pass filter based on Si_3 N_4–VO_2–Si_3 N_4 sandwich-structured hybrid metamaterials. The insulator–metal phase transiti...We experimentally demonstrate an electrically triggered terahertz(THz) dual-band tunable band-pass filter based on Si_3 N_4–VO_2–Si_3 N_4 sandwich-structured hybrid metamaterials. The insulator–metal phase transition of VO_2 film is induced by the Joule thermal effect of the top metal layer. The finite-integration-time-domain(FITD) method and finite element method(FEM) are used for numerical simulations. The sample is fabricated using a surface micromachining process,and characterized by a THz time-domain-spectrometer(TDS). When the bias current is 0.225 A, the intensity modulation depths at two central frequencies of 0.56 THz and 0.91 THz are about 81.7% and 81.3%, respectively. This novel design can achieve dynamically electric–thermo–optic modulation in the THz region, and has potential applications in the fields of THz communications, imaging, sensing, and astronomy exploration.展开更多
VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant i...VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11574059,61565004,and 11774288)the National Technology Major Special Project,China(Grant No.2017ZX02101007-003)+2 种基金the Natural Science Foundation of Guangxi,China(Grant Nos.2015GXNSFDA139039 and2017GXNSFBA198116)the Foundation from Guangxi Key Laboratory of Automatic Detection Technology and Instrument,China(Grant No.YQ16101)the Innovation of Guangxi Graduate Education,China(Grant Nos.2018YJCX70,2018YJCX67,and 2018YJCX74)
文摘We experimentally demonstrate an electrically triggered terahertz(THz) dual-band tunable band-pass filter based on Si_3 N_4–VO_2–Si_3 N_4 sandwich-structured hybrid metamaterials. The insulator–metal phase transition of VO_2 film is induced by the Joule thermal effect of the top metal layer. The finite-integration-time-domain(FITD) method and finite element method(FEM) are used for numerical simulations. The sample is fabricated using a surface micromachining process,and characterized by a THz time-domain-spectrometer(TDS). When the bias current is 0.225 A, the intensity modulation depths at two central frequencies of 0.56 THz and 0.91 THz are about 81.7% and 81.3%, respectively. This novel design can achieve dynamically electric–thermo–optic modulation in the THz region, and has potential applications in the fields of THz communications, imaging, sensing, and astronomy exploration.
基金financially supported by the National Natural Science Foundation of China (Nos. 51401046, 51572042, 61131005, 61021061, and 61271037)International Cooperation Projects (Nos. 2013HH0003 and 2015DFR50870)+3 种基金the 111 Project (No. B13042)the Sichuan Province S&T program (Nos. 2014GZ0003, 2015GZ0091, and 2015GZ0069)Fundamental Research Funds for the Central Universitiesthe start-up fund from the University of Electronic Science and Technology of China
文摘VO_2 thin films were grown on silicon substrates using Al_2O_3 thin films as the buffer layers. Compared with direct deposition on silicon, VO_2 thin films deposited on Al_2O_3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO_2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al_2O_3/VO_2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C–V measurement result indicates that the phase transformation of VO_2 thin films can be induced by an electrical field.
