We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro...We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope（CAFM）.The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state（LRS） and high resistance state（HRS） can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.展开更多
For the high temperature coefficient of resistivity (TCR) of VO_x thin films,the preparation process including the heat-treating and the application of seed layer,has been investigated.When the films were prepared wit...For the high temperature coefficient of resistivity (TCR) of VO_x thin films,the preparation process including the heat-treating and the application of seed layer,has been investigated.When the films were prepared without a seed layer, heated in air for 2 h,and then in N_2 for 2 h at 470℃,the TCR of about 1.07% K^(-1) (3.75% K^(-1) at 45℃～65℃) was gained.The R_(20℃)/R_(100℃) was about 28.75,while the R_(20℃)/R_(100℃) of the thin films prepared on a seed layer was 5.5.The X-ray diffraction (XRD) showed that better heating conditions led to less phase compositions and higher V_2O_5 diffraction peak,which led to higher TCR.The experiment results showed that the optimum heating condition was at 470℃for 4 h.展开更多
基金Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-1064)the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 61101055,61274113,and 11204212)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029)Tianjin Natural Science Foundation of China (Grant No. 10SYSYJC27700)
文摘We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer（Agilent B1500A）,and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope（CAFM）.The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state（LRS） and high resistance state（HRS） can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.
文摘For the high temperature coefficient of resistivity (TCR) of VO_x thin films,the preparation process including the heat-treating and the application of seed layer,has been investigated.When the films were prepared without a seed layer, heated in air for 2 h,and then in N_2 for 2 h at 470℃,the TCR of about 1.07% K^(-1) (3.75% K^(-1) at 45℃～65℃) was gained.The R_(20℃)/R_(100℃) was about 28.75,while the R_(20℃)/R_(100℃) of the thin films prepared on a seed layer was 5.5.The X-ray diffraction (XRD) showed that better heating conditions led to less phase compositions and higher V_2O_5 diffraction peak,which led to higher TCR.The experiment results showed that the optimum heating condition was at 470℃for 4 h.
