简要介绍了无机长余辉发光材料与光存储材料的概念及其起源和研究现状。简述了三种经典商业长余辉发光与光存储材料。基于这三种商业发光材料,分析了理性设计这类材料存在的问题,并介绍如何基于真空标度能级图(Vacuum referred binding ...简要介绍了无机长余辉发光材料与光存储材料的概念及其起源和研究现状。简述了三种经典商业长余辉发光与光存储材料。基于这三种商业发光材料,分析了理性设计这类材料存在的问题,并介绍如何基于真空标度能级图(Vacuum referred binding energy(VRBE)diagram)来设计长余辉发光与光存储材料的策略。首先,介绍了真空标度能级图的定义和构建其所需要的模型参数和实验光谱数据。在稀土离子掺杂无机化合物真空标度能级图的基础上,阐述二价和三价铋离子的真空标度能级位置。其次,基于YPO4模型材料的真空标度能级图,介绍电子释放模型和空穴释放模型的定义和区别。最后,结合稀土离子和铋离子掺杂REPO4(RE=La,Y,Lu)及NaYGeO_(4)家族化合物的真空标度能级图,简要论述如何设计电子与空穴陷阱中心以及如何调控电子或空穴陷阱的深度。真空标度能级图对讨论载流子的捕获与释放以及理性设计与探索无机长余辉发光与光存储材料具有一定的指导意义。展开更多
Yb^(3+)-doped phosphors have characteristic near-infrared(NIR)emissions,but their applications in phosphor-converted light-emitting-diodes(pc-LEDs)and Si solar cells are limited due to their mismatching excitation spe...Yb^(3+)-doped phosphors have characteristic near-infrared(NIR)emissions,but their applications in phosphor-converted light-emitting-diodes(pc-LEDs)and Si solar cells are limited due to their mismatching excitation spectra.Here,we selected nitride La3 Si6 N11(LSN)as host material to achieve Yb^(3+)NIR emission upon low-energy charge transfer(CT)excitation.The obtained phosphor LSN:Yb^(3+)has a broad CT excitation band ranging from 250 to 500 nm and narrowband NIR emissions ranging from 950 to 1100 nm centered at 983 nm.On the basis of spectral data,the vacuum referred binding energies(VRBE)schemes are constructed to locate energy levels of all lanthanide ions in LSN.We also fabricated NIR pc-LED device using 395 nm LED chip to demonstrate the potential applications of LSN:Yb^(3+)phosphors.展开更多
文摘简要介绍了无机长余辉发光材料与光存储材料的概念及其起源和研究现状。简述了三种经典商业长余辉发光与光存储材料。基于这三种商业发光材料,分析了理性设计这类材料存在的问题,并介绍如何基于真空标度能级图(Vacuum referred binding energy(VRBE)diagram)来设计长余辉发光与光存储材料的策略。首先,介绍了真空标度能级图的定义和构建其所需要的模型参数和实验光谱数据。在稀土离子掺杂无机化合物真空标度能级图的基础上,阐述二价和三价铋离子的真空标度能级位置。其次,基于YPO4模型材料的真空标度能级图,介绍电子释放模型和空穴释放模型的定义和区别。最后,结合稀土离子和铋离子掺杂REPO4(RE=La,Y,Lu)及NaYGeO_(4)家族化合物的真空标度能级图,简要论述如何设计电子与空穴陷阱中心以及如何调控电子或空穴陷阱的深度。真空标度能级图对讨论载流子的捕获与释放以及理性设计与探索无机长余辉发光与光存储材料具有一定的指导意义。
基金Project supported by National Natural Science Foundation of China(51832005,51972020)。
文摘Yb^(3+)-doped phosphors have characteristic near-infrared(NIR)emissions,but their applications in phosphor-converted light-emitting-diodes(pc-LEDs)and Si solar cells are limited due to their mismatching excitation spectra.Here,we selected nitride La3 Si6 N11(LSN)as host material to achieve Yb^(3+)NIR emission upon low-energy charge transfer(CT)excitation.The obtained phosphor LSN:Yb^(3+)has a broad CT excitation band ranging from 250 to 500 nm and narrowband NIR emissions ranging from 950 to 1100 nm centered at 983 nm.On the basis of spectral data,the vacuum referred binding energies(VRBE)schemes are constructed to locate energy levels of all lanthanide ions in LSN.We also fabricated NIR pc-LED device using 395 nm LED chip to demonstrate the potential applications of LSN:Yb^(3+)phosphors.
