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SnO_(2)/Co_(3)O_(4)nanofibers using double jets electrospinning as low operating temperature gas sensor 被引量:1
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作者 Zhao Wang Shu-Xing Fan Wei Tang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第2期618-625,共8页
SnO_(2)/Co_(3)O_(4)nanofibers(NFs)are synthesized by using a homopolar electrospinning system with double jets of positive polarity electric fields.The morphology and structure of SnO_(2)/Co_(3)O_(4)hetero-nanofibers ... SnO_(2)/Co_(3)O_(4)nanofibers(NFs)are synthesized by using a homopolar electrospinning system with double jets of positive polarity electric fields.The morphology and structure of SnO_(2)/Co_(3)O_(4)hetero-nanofibers are characterized by using field emission scanning electron microscope(FE-SEM),transmission electron microscope(TEM),x-ray diffraction(XRD),and x-ray photoelectron spectrometer(XPS).The analyses of SnO_(2)/Co_(3)O_(4)NFs by EDS and HRTEM show that the cobalt and tin exist on one nanofiber,which is related to the homopolar electrospinning and the crystallization during sintering.As a typical n-type semiconductor,Sn O_(2)has the disadvantages of high optimal operating temperature and poor reproducibility.Comparing with Sn O_(2),the optimal operating temperature of SnO_(2)/Co_(3)O_(4)NFs is reduced from 350℃to 250℃,which may be related to the catalysis of Co_(2)O_(2).The response of SnO_(2)/Co_(3)O_(4)to 100-ppm ethanol at 250℃is 50.9,9 times higher than that of pure Sn O_(2),which may be attributed to the p–n heterojunction between the n-type Sn O_(2)crystalline grain and the p-type Co_(2)O_(2)crystalline grain.The nanoscale p–n heterojunction promotes the electron migration and forms an interface barrier.The synergy effects between Sn O_(2)and Co_(2)O_(2),the crystalline grain p–n heterojunction,the existence of nanofibers and the large specific surface area all jointly contribute to the improved gas sensing performance. 展开更多
关键词 sno_(2)/Co_(3)o_(4)nanofibers(NFs) homopolar double jets electrospinning gas sensors nanoscale p-n heterojunction
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揭示NiS@Ta_(2)O_(5)纳米纤维中梯型电荷转移路径及光催化CO_(2)转化性能
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作者 邵秀丽 李可 +3 位作者 李静萍 程强 王国宏 王楷 《Chinese Journal of Catalysis》 SCIE EI CAS CSCD 2023年第8期193-203,共11页
近年来,人口的快速增长和化石燃料的过度使用导致大气中的CO_(2)含量持续上升.光催化技术是可以解决上述问题的有效途径之一.利用光催化技术将大气中CO_(2)还原为以CO,CH_(4),CH_(3)OH为代表的气相或液相碳氢燃料是解决能源危机和温室... 近年来,人口的快速增长和化石燃料的过度使用导致大气中的CO_(2)含量持续上升.光催化技术是可以解决上述问题的有效途径之一.利用光催化技术将大气中CO_(2)还原为以CO,CH_(4),CH_(3)OH为代表的气相或液相碳氢燃料是解决能源危机和温室效应的有效策略.为实现高效率光催化CO_(2)还原反应,半导体光催化剂应具有光吸收范围广、载流子传输路径短及反应活性位点丰富等优点.一维纳米结构光催化剂结合了纳米颗粒和薄膜的优点,有利于材料在光催化反应后从体系中有效分离.特别是通过静电纺丝法制备的纳米纤维光催化剂可以组装成独特的三维网络,在光催化CO_(2)还原领域中更有利于光催化剂的重复使用.一维Ta_(2)O_(5)纳米纤维能够有效缩短光生电子从材料内部到材料表面的传输距离,减少电子和空穴在光催化剂中的复合.但Ta_(2)O_(5)的带隙较宽,导致光响应范围窄,而且在单一的半导体材料中,宽可见光吸收范围和强氧化还原能力难以共存.NiS是一种直接带隙硫化物半导体光催化剂,拥有较宽的光响应范围.为了提高单一Ta_(2)O_(5)纳米纤维的光催化活性和光吸收范围,构建梯型异质结已被证实是提高光催化活性的一种有前途的策略.梯型异质结不仅能有效地分离光生电子和空穴,而且有利于还原能力低的半导体导带上的电子和氧化能力低的半导体价带上的空穴复合,而氧化还原能力较强的空穴和电子分别被保留.因此,构建新型梯型NiS@Ta_(2)O_(5)异质结纤维光催化剂可以解决太阳能利用率低和光生载流子复合速率快的问题,在光催化还原CO_(2)领域具有重要的理论和现实意义.本文利用简单的静电纺丝辅助离子交换策略制备了一系列梯型NiS@Ta_(2)O_(5)异质结光催化剂(标记为xNSTO,x=10,20,50,代表Ni(OH)2@Ta_(2)O_(5)中Ni(OH)_(2)的百分含量),采用透射电子显微镜(TEM)和能谱分析观察了光催化剂的形貌及元素分布,结果表明,二维NiS纳米片生长在一维Ta_(2)O_(5)纤维上形成均匀分布的核-壳结构.光电流、表面光电压谱及阻抗响应图谱表明,NSTO复合材料具有较高的光响应和较低的阻抗,有利于电子空穴的运输.光催化CO_(2)还原测试结果表明,20NSTO催化剂拥有最高的CO_(2)光还原活性(CO产率43.27μmol g^(-1)h^(-1);CH_(4)产率6.56μmol g^(-1)h^(-1)).同时,催化剂经过10次循环测试后催化活性没有明显下降,说明光催化剂具有较好的稳定性.此外,界面内建电场、能带边缘弯曲和库仑协同作用促进了NiS@Ta_(2)O_(5)异质结光催化剂相对无用的电子和空穴的复合.原位辐照X射线光电子能谱测试和电子顺磁共振实验结果表明NiS@Ta_(2)O_(5)异质结光催化剂中的电子迁移遵循梯型电荷转移路径.综上,本文提供了一种简单的纳米纤维基梯型异质结光催化剂的制备方法,可以优化能带结构以促进光生载流子的分离,从而实现高效的太阳燃料制备. 展开更多
关键词 Ta_(2)o_(5)纳米纤维 异质结 光催化Co_(2)还原 电荷分离 梯型机理
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V_(2)O_(5)/SnO_(2)纳米纤维异质结的构筑及其光电性能
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作者 金艳欣 吴邱奇 +3 位作者 汤朝阳 曹文君 郭旭达 侯纪伟 《光学学报》 EI CAS CSCD 北大核心 2024年第2期93-103,共11页
本文使用同轴静电纺丝技术,以合适的钒源和锡源为前驱体,在不同的热处理条件下,制备V_(2)O_(5)/Sn O_(2)纳米纤维异质结构,并构筑高灵敏的光电探测器件。在偏置电压为2.0 V、波长为405 nm的激光辐照下,V_(2)O_(5)/Sn O_(2)纳米纤维异质... 本文使用同轴静电纺丝技术,以合适的钒源和锡源为前驱体,在不同的热处理条件下,制备V_(2)O_(5)/Sn O_(2)纳米纤维异质结构,并构筑高灵敏的光电探测器件。在偏置电压为2.0 V、波长为405 nm的激光辐照下,V_(2)O_(5)/Sn O_(2)纳米纤维异质结构显示出1.28μA的光电流,相比纯V_(2)O_(5)纳米纤维光电探测器(0.43μA),光电流提高了近三倍。在偏置电压为3.0 V的周期性激光的调制下,V_(2)O_(5)/Sn O_(2)纳米纤维异质结光电探测器表现出快速的光响应,响应和衰减时间均为0.566 s,响应度为3.97 A/W,比探测率为2.2×10^(7)Jones,表现出良好的光电探测性能。这些实验结果为V_(2)O_(5)/Sn O_(2)纳米纤维异质结构在光电子器件中的应用提供了新的思路。 展开更多
关键词 v_(2)o_(5) v_(2)o_(5)/sno_(2)纳米纤维异质结 静电纺丝 光电探测器
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Improving open-circuit voltage and short-circuit current of high-efficiency silicon-based planar heterojunction solar cells by combining V_(2)O_(5)with PEDOT:PSS
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作者 Zhiting Luo Chen Yang +3 位作者 Xiuhua Chen Wenhui Ma Shaoyuan Li Kaixin Fu 《Journal of Materiomics》 SCIE CSCD 2023年第3期438-446,共9页
In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer... In recent years,a novel PEDOT:PSS/n-Si planar heterojunction solar cell has been extensively studied in the photovoltaic field.Different V_(2)O_(5)-IPA concentrations mixed in PEDOT:PSS samples as hole transport layer were prepared by means of spin coating technique and mechanical mixing of organic and inorganic materials.V_(2)O_(5)was studied for its effects on the surface morphology,chemical composition,and optical transmittance of PEDOT:PSS films.The findings of the study show that the addition of V_(2)O_(5)particles changes the surface morphology of PEDOT:PSS films and promotes its superior ohmic contact with the Si interface.Furthermore,PEDOT:PSS incorporated with V_(2)O_(5)particles that have outstanding optical and semiconductor properties reduces the rate of carrier recombination at the device interface and blocks electron transport to the anode in the fabricated Si-based solar cells.When compared to conventional PEDOT:PSS/Si planar heterojunction solar cells,the fill factor,photoelectric conversion efficiency,open-circuit voltage,and short-circuit current density of the devices prepared in this study can be significantly improved,reaching up to 70.98%,15.17%,652 mV and 32.8 mA/cm^(2),respectively.This research provides a promising and effective method for improving the photoelectric conversion performance of PEDOT:PSS/Si heterojunction solar cells,which enables the application of V_(2)O_(5)in Si solar cells. 展开更多
关键词 Si PEDoT:PSS heterojunction photovoltaic devices v_(2)o_(5)-IPA High conductivity Semiconductor film
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