In the present work it is shown that the generalized Van-der-Waals-Berthelot equation describes the evaporation curves （saturation curves） for alkali metals with good accuracy. This result is obtained on the basis o...In the present work it is shown that the generalized Van-der-Waals-Berthelot equation describes the evaporation curves （saturation curves） for alkali metals with good accuracy. This result is obtained on the basis of the calculations performed by the author for thermodynamic parameters of the saturation curves described by the generalized Van-der-Waals-Berthelot equation.展开更多
The evaporation curve is calculated for the Van-der-Waals and Berthelot gases. It was shown that the evaporation curve of real gases resides between those of Van-der-Waals and Berthelot gases. The generalized Van-der-...The evaporation curve is calculated for the Van-der-Waals and Berthelot gases. It was shown that the evaporation curve of real gases resides between those of Van-der-Waals and Berthelot gases. The generalized Van-der-Waals-Berthelot equation is suggested, which not only qualitatively but also quantitatively describes evaporation curves of real gases. It was also shown that the generalized Van-der-Waals and Berthelot equation well describes other characteristics of real gases.展开更多
Van der Waals(vdW)heterostructures provide a unique opportunity to develop various electronic and optoelectronic devices with specific functions by designing novel device structures,especially for bioinspired neuromor...Van der Waals(vdW)heterostructures provide a unique opportunity to develop various electronic and optoelectronic devices with specific functions by designing novel device structures,especially for bioinspired neuromorphic optoelectronic devices,which require the integration of nonvolatile memory and excellent optical responses.Here,we demonstrate a programmable optoelectronic synaptic floating-gate transistor based on multilayer graphene/h-BN/MoS2 vdW heterostructures,where both plasticity emulation and modulation were successfully realized in a single device.The dynamic tunneling process of photogenerated carriers through the as-fabricated vdW heterostructures contributed to a large memory ratio(105)between program and erase states.Our device can work as a functional or silent synapse by applying a program/erase voltage spike as a modulatory signal to determine the response to light stimulation,leading to a programmable operation in optoelectronic synaptic transistors.Moreover,an ultra-low energy consumption per light spike event(~2.5 fJ)was obtained in the program state owing to a suppressed noise current by program operation in our floating-gate transistor.This study proposes a feasible strategy to improve the functions of optoelectronic synaptic devices with ultra-low energy consumption based on vdW heterostructures designed for highly efficient artificial neural networks.展开更多
用7种有代表性物质在广域温度和压力范围内的液体物性实验值，对2个不同程度上修正的van der Waals模型进行比较和评价，结果表明，从统计力学出，进一步引入Lennard-Jones位能函数对内压项进行修正的 vaa der Waals模型，较仅对已占...用7种有代表性物质在广域温度和压力范围内的液体物性实验值，对2个不同程度上修正的van der Waals模型进行比较和评价，结果表明，从统计力学出，进一步引入Lennard-Jones位能函数对内压项进行修正的 vaa der Waals模型，较仅对已占体积项进行修正的van der Waals模型明显更优。展开更多
文摘In the present work it is shown that the generalized Van-der-Waals-Berthelot equation describes the evaporation curves （saturation curves） for alkali metals with good accuracy. This result is obtained on the basis of the calculations performed by the author for thermodynamic parameters of the saturation curves described by the generalized Van-der-Waals-Berthelot equation.
文摘The evaporation curve is calculated for the Van-der-Waals and Berthelot gases. It was shown that the evaporation curve of real gases resides between those of Van-der-Waals and Berthelot gases. The generalized Van-der-Waals-Berthelot equation is suggested, which not only qualitatively but also quantitatively describes evaporation curves of real gases. It was also shown that the generalized Van-der-Waals and Berthelot equation well describes other characteristics of real gases.
基金National Natural Science Foundation of China,Grant/Award Numbers:62104017,52072204,62074015National Postdoctoral Program for Innovative Talents of China,Grant/Award Number:BX20200049China Postdoctoral Science Foundation,Grant/Award Number:2021M690013。
文摘Van der Waals(vdW)heterostructures provide a unique opportunity to develop various electronic and optoelectronic devices with specific functions by designing novel device structures,especially for bioinspired neuromorphic optoelectronic devices,which require the integration of nonvolatile memory and excellent optical responses.Here,we demonstrate a programmable optoelectronic synaptic floating-gate transistor based on multilayer graphene/h-BN/MoS2 vdW heterostructures,where both plasticity emulation and modulation were successfully realized in a single device.The dynamic tunneling process of photogenerated carriers through the as-fabricated vdW heterostructures contributed to a large memory ratio(105)between program and erase states.Our device can work as a functional or silent synapse by applying a program/erase voltage spike as a modulatory signal to determine the response to light stimulation,leading to a programmable operation in optoelectronic synaptic transistors.Moreover,an ultra-low energy consumption per light spike event(~2.5 fJ)was obtained in the program state owing to a suppressed noise current by program operation in our floating-gate transistor.This study proposes a feasible strategy to improve the functions of optoelectronic synaptic devices with ultra-low energy consumption based on vdW heterostructures designed for highly efficient artificial neural networks.
文摘用7种有代表性物质在广域温度和压力范围内的液体物性实验值，对2个不同程度上修正的van der Waals模型进行比较和评价，结果表明，从统计力学出，进一步引入Lennard-Jones位能函数对内压项进行修正的 vaa der Waals模型，较仅对已占体积项进行修正的van der Waals模型明显更优。
