Fabrication of Graphene/Cu Composite by Chemical Vapor Deposition and Effects of Graphene Layers on Resultant Electrical Conductivity

Graphene(Gr)has unique properties including high electrical conductivity;Thus,graphene/copper(Gr/Cu)composites have attracted increasing attention to replace traditional Cu for electrical applications. However,the problem of how to control graphene to form desired Gr/Cu composite is not well solved. This paper aims at exploring the best parameters for preparing graphene with different layers on Cu foil by chemical vapor deposition(CVD)method and studying the effects of different layers graphene on Gr/Cu composite’s electrical conductivity. Graphene grown on single-sided and double-sided copper was prepared for Gr/Cu and Gr/Cu/Gr composites. The resultant electrical conductivity of Gr/Cu composites increased with decreasing graphene layers and increasing graphene volume fraction. The Gr/Cu/Gr composite with monolayer graphene owns volume fraction of less than 0.002%,producing the best electrical conductivity up to59.8 ×10^(6)S/m,equivalent to 104.5% IACS and 105.3% pure Cu foil.

Uniform deposition of ultra-thin TiO_(2) film on mica substrate by atmospheric pressure chemical vapor deposition: Effect of precursor concentration

The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.

Controllable growth of wafer-scale PdS and PdS_(2) nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Palladium(Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics.However,the synthesis of large-scale uniform PdS and PdS_(2)nanofilms(NFs)remains an enormous challenge.In this work,2-inch wafer-scale PdS and PdS_(2) NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique.The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS_(2) NFs.A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations.The electrical transport properties of PdS and PdS_(2) NFs were explored by conductive atomic force microscopy.Our findings have achieved the controllable growth of PdS and PdS_(2) NFs,which may provide a pathway to facilitate PdS and PdS_(2) based applications for next-generation high performance optoelectronic devices.

Controllable Modulation of Morphology and Property of CsPbCl_(3)Perovskite Microcrystals by Vapor Deposition Method

As a direct wide bandgap semiconductor,CsPbCl_(3)has great potential applications in the eld of near-ultraviolet photodetectors,lasers and higher-order multiphoton uores-cent detectors.In this work,we synthesized CsPbCl_(3)micro/nanocrystals by vapor depo-sition method with CsCl and PbCl_(2)powders as the source materials.It was con rmed that the formation of CsPbCl_(3)perovskite through the chemical reaction of CsCl with PbCl_(2)occurred in the quartz boat before the source evaporation,not in vapor or on sub-strate surface.The evaporated CsPbCl_(3)can form micro/nanocrystals on substrate surfaces under appropriate conditions.Various morphologies including irregular polyhedrons,rods and pyramids could be observed at lower temperature,while stable and uniform CsPbCl_(3)single crystal microplatelets were controllably synthesized at 450℃.Prolonging the growth time could modulate the size and density of the microcrystals,but could not change the morphology.Substrate types made little di erence to the morphology of CsPbCl_(3)crystals.The photoluminescence spectra indicated that the crystallinity and morphology of CsPbCl_(3)micro/nanocrystals have signi cant e ects on their optical properties.The work is expected to be helpful to the development of optoelectronic devices based on individual CsPbCl_(3)microcrystal.

Boron-Silicon Thin Film Formation Using a Slim Vertical Chemical Vapor Deposition Reactor

A boron-silicon film was formed from boron trichloride gas and dichlorosilane gas at about 900℃in ambient hydrogen at atmospheric pressure utilizing a slim vertical cold wall chemical vapor deposition reactor designed for the Minimal Fab system. The gas flow rates were 80, 20 and 0.1 - 20 sccm for the hydrogen, dichlorosilane and boron trichloride gases, respectively. The gas transport condition in the reactor was shown to quickly become stable when evaluated by quartz crystal microbalances at the inlet and outlet. The boron-silicon thin film was formed by achieving the various boron concentrations of 0.16% - 80%, the depth profile of which was flat. By observing the cross-sectional TEM image, the obtained film was dense. The boron trichloride gas is expected to be useful for the quick fabrication of various materials containing boron at significantly low and high concentrations.

Numerical modeling of SiC by low-pressure chemical vapor deposition from methyltrichlorosilane

The development of functional relationships between the observed deposition rate and the experimental conditions is an important step toward understanding and optimizing low-pressure chemical vapor deposition(LPCVD)or low-pressure chemical vapor infiltration(LPCVI).In the field of ceramic matrix composites(CMCs),methyltrichlorosilane(CH3 SiCl3,MTS)is the most widely used source gas system for SiC,because stoichiometric SiC deposit can be facilitated at 900°C–1300°C.However,the reliability and accuracy of existing numerical models for these processing conditions are rarely reported.In this study,a comprehensive transport model was coupled with gas-phase and surface kinetics.The resulting gas-phase kinetics was confirmed via the measured concentration of gaseous species.The relationship between deposition rate and 24 gaseous species has been effectively evaluated by combining the special superiority of the novel extreme machine learning method and the conventional sticking coefficient method.Surface kinetics were then proposed and shown to reproduce the experimental results.The proposed simulation strategy can be used for different material systems.

Nucleation and Oriented Textured Growth of Diamond Films on Si(100) via Electron Emission in Hot Filament Chemical Vapor Deposition

Oriented textured diamond films were obtained on Si（100） substrate via electron emission in hot filament chemical vapor deposition （HFCVD）. A dc bias voltage relative to the filament was applied to the tungsten electrode between the substrate and the filament. The nucleation and subsequent growth of diamond films were characterized by scanning electron microscopy and Raman spectroscopy. The experimental results showed that the electron emission from the diamond coating on the electrode played a critical role during the nucleation.The maximum value of nucleation density was up to 1011 cm-2 on pristine Si surface at emission current of 250 mA. The effect of the electron emission on the reactive gas composition was analyzed by in situ infrared absorption, indicating that the concentration of CH3 and C2H2 near the substrate surface was extremely increased. This may be responsible for the enhanced nucleation by electron emission.

Chemical vapor deposition growth behavior of graphene

The optimized growth parameters of graphene with different morphologies,such as dendrites,rectangle,and hexagon,have been obtained by low-pressure chemical vapor deposition on polycrystalline copper substrates.The evolution of fractal graphene,which grew on the polycrystalline copper substrate,has also been observed.When the equilibrium growth state of graphene is disrupted,its intrinsic hexagonal symmetry structure will change into a non-hexagonal symmetry structure.Then,we present a systematic and comprehensive study of the evolution of graphene with different morphologies grown on solid copper as a function of the volume ratio of methane to hydrogen in a controllable manner.Moreover,the phenomena of stitching snow-like graphene together and stacking graphene with different angles was also observed.

Quartz Crystal Microbalances for Evaluating Gas Motion Differences between Dichlorosilane and Trichlorosilane in Ambient Hydrogen in a Slim Vertical Cold Wall Chemical Vapor Deposition Reactor

A dichlorosilane gas and a trichlorosilane gas in ambient hydrogen were evaluated to show their different gas flow motions in a slim vertical cold wall chemical vapor deposition reactor for the Minimal Fab system. This evaluation was performed for improving and controlling the film qualities and the productivities, using two quartz crystal microbalances (QCM) installed at the inlet and exhaust of the chamber by taking into account that the QCM frequency corresponds to the real time changes in the gas properties. Typically, the time period approaching from the inlet to the exhaust was shorter for the trichlorosilane gas than that for the dichlorosilane gas. The trichlorosilane gas was shown to move like plug flow, while the dichlorosilane gas seemed to be well mixed in the entire chamber.

CHEMICAL VAPOR DEPOSITION OF DIFFUSION BARRIERS FOR ADVANCED METALLIZATION

Metalization is widely used in integrated circuit devices to connect millions of devices together. The success of metallization depends strongly on diffusion barrier technology, due to the interactions of metals with surrounding materials. As device dimension further shrinks, diffusion barrier technology is facing more challenges and opening up new opportunities, particularly for chemical vapor deposition (CVD) process technology. CVD is attracting increased attention in advanced metallization mainly due to its capability in producing conformal thin films. In this review, we will focus our discussion on CVD processes for three most important classes of diffusion barriers: Ti, W and Ta-based diffusion banters. Examples from current literature will be examined.

Nucleation mechanism and morphology evolution of MoS_2 flakes grown by chemical vapor deposition

We study the nucleation mechanism and morphology evolution of MoS_2 flakes grown by chemical vapor deposition(CVD)on SiO_2/Si substrates with using S and MoO_3 powders.The MoS_2 flake is of monolayer with triangular nucleation,which might arise from the initial MoO_3-xthat is deposited on the substrate,and then bonded with S to form MoS_2 flake.The ratio of Mo and S is higher than 1:2 at the beginning with Mo terminated triangular nucleation formed.After that,the morphology of MoS_2 flake evolves from triangle to similar hexagon,then to truncated triangle which is determined by the faster growth speed of Mo termination than that of S termination under the S rich environment.The nucleation density does not increase linearly with the increase of reactant concentration,which could be explained by the two-dimensional nucleation theory.

Synthesis of flower-like WS_(2) by chemical vapor deposition

Flower-like tungsten disulfide(WS_(2))with a diameter of 5-10μm is prepared by chemical vapor deposition(CVD).Scanning electron microscopy(SEM),energy dispersive spectrometer(EDS),Raman spectroscopy,and ultraviolet-visible(UV-vis)spectroscopy are used to characterize its morphological and optical properties,and its growth mechanism is discussed.The key factors for the formation of flower-like WS_(2)are determined.Firstly,the cooling process causes the generation of nucleation dislocations,and then the"leaf"growth of flower-like WS_(2)is achieved by increasing the temperature.

Continuous-wave operation of InAs/InP quantum dot tunable external-cavity laser grown by metal-organic chemical vapor deposition

We demonstrate high-performance broadband tunable external-cavity lasers(ECLs) with the metal-organic chemical vapor deposition(MOCVD) grown In As/In P quantum dots(QDs) structures. Without cavity facet coatings, the 3-d B spectral bandwidth of the Fabry–Perot(FP) laser is approximately 10.8 nm, while the tuning bandwidth of ECLs is 45 nm.Combined with the anti-reflection(AR)/high-reflection(HR) facet coating, a 92 nm bandwidth tuning range has been obtained with the wavelength covering from 1414 nm to 1506 nm. In most of the tuning range, the threshold current density is lower than 1.5 k A/cm2. The maximum output power of 6.5 m W was achieved under a 500 m A injection current.All achievements mentioned above were obtained under continuous-wave(CW) mode at room temperature(RT).

Monolayer MoS_(2)of high mobility grown on SiO_(2)substrate by two-step chemical vapor deposition

We report a novel two-step ambient pressure chemical vapor deposition(CVD)pathway to grow high-quality Mo S_(2)monolayer on the Si O_(2)substrate with large crystal size up to 110μm.The large specific surface area of the pre-synthesized Mo O_(3)flakes on the mica substrate compared to Mo O_(3)powder could dramatically reduce the consumption of the Mo source.The electronic information inferred from the four-probe scanning tunneling microscope(4P-STM)image explains the threshold voltage variations and the n-type behavior observed in the two-terminal transport measurements.Furthermore,the direct van der Pauw transport also confirms its relatively high carrier mobility.Our study provides a reliable method to synthesize high-quality Mo S_(2)monolayer,which is confirmed by the direct 4P-STM measurement results.Such methodology is a key step toward the large-scale growth of transition metal dichalcogenides(TMDs)on the Si O_(2)substrate and is essential to further development of the TMDs-related integrated devices.

Growth of large-scale two-dimensional insulator Na2Ta4O11 through chemical vapor deposition

The insulator Na2Ta4O11 has been considered as a potential photocatalyst.However,little attention has been given to the synthesis of Na2Ta4O11 nanoparticles,let alone the growth of two-dimensional(2D)layered Na2Ta4O11 flake,which may bring innovative properties and promising applications.Here,the 2D thin-layer Na2Ta4O11 flake was first produced by chemical vapor deposition(CVD)method,with the smallest thickness reported currently.We have also synthesized 2D Na2Ta4O11 flake over 100μm,which was the largest value over the 2D level reported to date.Our work proposed novel strategies to synthesize other 2D metal oxide material and endow the Na2Ta4O11 more properties and applications.

Characteristic Length of Metallic Nanorods under Physical Vapor Deposition

By using physical vapor deposition(PVD)to grow metallic nanorods,the characteristic length is controllable,which can be identified by two different growth modes:Mode I and Mode II.In Mode I,the growth of metallic nanorods is dominated by the monolayer surface steps.Whereas in Mode II,the growth mechanism is mainly determined by the multilayer surface steps.In this work,we focused on the analysis of the physical process of Mode I,in which the adatoms diffuse on the monolayer surface at beginning,then diffuse down to the next monolayer surface,and finally result in the metallic nanorods growth.Based on the physical process,both the variations of the characteristic length and the numerical solutions were theoretically proposed.In addition,the twodimensional(2 D)lattice kinetic Monte Carlo simulations were employed to verify the theoretical derivation of the metallic nanorods growth.Our results pay a new way for modifying the performance of metallic nanorods-based applications and devices.

High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.

tructure and Composition of Crystalline Carbon Nitride Films Synthesized by Microwave Plasma Chemical Vapor Deposition

Crystalline carbon nitride thin films were prepared on Si (100) substrates by a microwave plasma chemical vapor deposition method, using CH4/N2 as precursor gases. The surface morphologies of the carbon nitride films deposited on Si substrate at 830℃ are consisted of hexagonal crystalline rods. The effect of substrate temperature on the formation of carbon nitrides was investigated. X-ray photoelectron spectroscopy analysis indicated that the maximum value of N/C in atomic ratio in the films deposited at a substrate temperature of 830℃ is 1 .20, which is close to the stoichiometric value of C3N4. The X-ray diffraction pattern of the films deposited at 830℃ indicates no amorphous phase in the films, which are composed of β- and α-C3N4 phase containing an unidentified C-N phase. Fourier transform infrared spectroscopy supports the existence of C-N covalent bond.

<100> Textured Diamond Film on Silicon Grown by Hot Filament Chemical Vapor Deposition

The <100> textured growth of diamond film on HF eroded silicon wafer has been studied by HFCVD. The evolution of grain size and sudece morphology vs deposition time is presented and the <100> textured thick diamond film (80μm) with smooth surface, desirable for practical application in many fields is

Theoretical investigations on the growth of graphene by oxygenassisted chemical vapor deposition

Recently,graphene has drawn considerable attention in the field of electronics,owing to its favorable conductivity and high carrier mobility.Crucial to the industrialization of graphene is its high-quality microfabrication via chemical vapor deposition.However,many problems remain in its preparation,such as the not fully understood cracking mechanism of the carbon source,the mechanism of its substrate oxidation,and insufficient defect repair theory.To help close this capability gap,this study leverages density functional theory to explore the role of O in graphene growth.The effects of Cu substrate oxidation on carbon source cracking,nucleation barriers,crystal nucleus growth,and defect repairs are discussed.OCu was found to reduce energy change during dehydrogenation,rendering the process easier.Moreover,the adsorbed O in graphene or its Cu substrate can promote defect repair and edge growth.