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Vaporization model of MgCl2-CaCl2 binary melts in fluidized bed
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作者 Qiao Wang Qingshan Zhu +2 位作者 Chuanlin Fan Zhen Wang Hongzhong Li 《Chinese Journal of Chemical Engineering》 SCIE EI CAS CSCD 2017年第1期123-129,共7页
The present study investigated the vaporization kinetics of MgCl_2,CaCl_2 and their binary melts in a fluidized bed at1073-1273 K,and developed a vaporization model for the binary melts to explore the possibility of a... The present study investigated the vaporization kinetics of MgCl_2,CaCl_2 and their binary melts in a fluidized bed at1073-1273 K,and developed a vaporization model for the binary melts to explore the possibility of achieving enhanced vaporization rate for the feedstock containing CaO greater than 0.2 wt%.The vaporization rate constant of MgCl_2 is more than seven times than that of CaCl_2 at 1273 K.The vaporization rate of the binary melt was significantly affected by the composition,a small quantity of CaCl_2 can remarkably deteriorate the overall vaporization rate.Experimental results coincide well with the numerical simulation by the vaporization model which regards the evolution of vaporization rate with melts composition.A correlation between the necessary operation temperature and the CaO/(CaO + MgO) of the feedstock was proposed.Predictions reveal that a similar vaporization rate for 0.2 wt%-0.4 wt%CaO content feedstock with 0.2 wt%could be achieved at lower than 1365 K. 展开更多
关键词 MgCl2 CaCl2 Binary melts vaporization kinetics kinetics model
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Influence of CH_3SiCl_3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method 被引量:1
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作者 刘翠霞 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2012年第5期871-875,共5页
CH3SiCl3 (MTS)-H2-Ar system has been applied to prepare SiC film with chemical vapor deposition (CVD) method in this paper. For three facets of SiC film, some significant influence on growth rate, surface roughnes... CH3SiCl3 (MTS)-H2-Ar system has been applied to prepare SiC film with chemical vapor deposition (CVD) method in this paper. For three facets of SiC film, some significant influence on growth rate, surface roughness, thickness and relative density brought by MTS consistency has been mainly discussed with kinetic monte carlo (KMC) method. The simulation results show that there is a certain scale for mol ratio of H2 to MTS (H2/MTS) with different deposition temperature. When MTS consistency increases, growth rate and surface roughness of three facets all increase, which manifests approximate linearity relationship. Thickness of three facets also increases while increasing trend of three facets thickness is different obviously. Although relative density of three facets all increases, increasing trend shows a little difference with MTS consistency increasing. 展开更多
关键词 SiC film chemical vapor deposition kinetic monte carlo
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