A four-stage cascaded variable optical attenuator(VOA)with a large attenuation range is presented.The VOA is based on a Mach–Zehnder interferometer(MZI)and fabricated in a silica-based planar lightwave circuit(PLC)pl...A four-stage cascaded variable optical attenuator(VOA)with a large attenuation range is presented.The VOA is based on a Mach–Zehnder interferometer(MZI)and fabricated in a silica-based planar lightwave circuit(PLC)platform.The thermo-optic effect is used to achieve intensity modulation.The measured maximum attenuation of the four-stage cascaded VOA is 88.38 d B.The chip is also tested in a quantum key distribution(QKD)system to generate signal and decoy states.The mean photon number after attenuation of the four-stage cascaded VOA is less than 0.1,which can meet the requirement of QKD.展开更多
A compact variable optical attenuator, covering C and L bands with over 50 dB attenuation range, is realized using a single liquid crystal cell with a tilted fused silica coating compensating the cell's small resi...A compact variable optical attenuator, covering C and L bands with over 50 dB attenuation range, is realized using a single liquid crystal cell with a tilted fused silica coating compensating the cell's small residual birefringence.展开更多
SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with...SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.展开更多
基金the National Key Research and Development Program of China(Grant No.2019YFB2203504)Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB43000000)the Natural Science Foundation of Anhui Province,China(Grant No.1908085QF274)。
文摘A four-stage cascaded variable optical attenuator(VOA)with a large attenuation range is presented.The VOA is based on a Mach–Zehnder interferometer(MZI)and fabricated in a silica-based planar lightwave circuit(PLC)platform.The thermo-optic effect is used to achieve intensity modulation.The measured maximum attenuation of the four-stage cascaded VOA is 88.38 d B.The chip is also tested in a quantum key distribution(QKD)system to generate signal and decoy states.The mean photon number after attenuation of the four-stage cascaded VOA is less than 0.1,which can meet the requirement of QKD.
文摘A compact variable optical attenuator, covering C and L bands with over 50 dB attenuation range, is realized using a single liquid crystal cell with a tilted fused silica coating compensating the cell's small residual birefringence.
基金This work was supported by the National“973"Project of China(Grant No,G2000-03-66)the National“863”Project(Grant No.2002AA3 12060)of the Ministry of Science and Technology of Chinathe National Natural Science Foundation of China(Grant Nos.69896260 and 60336010).
文摘SOI (silicon-on-insulator) is a new material with a lot of important perform- ances such as large index difference, low transmission loss. Fabrication processes for SOI based optoelectronic devices are compatible with conventional IC processes. Having the potential of OEIC monolithic integration, SOI based optoelectronic devices have shown many good characteristics and become more and more attractive recently. In this paper, the recent progresses of SOI waveguide devices in our research group are presented. By highly effective numerical simulation, the single mode conditions for SOI rib waveguides with rectangular and trapezoidal cross-section were accurately investigated. Using both chemical anisotropic wet etching and plasma dry etching techniques, SOI single mode rib waveguide, MMI coupler, VOA (variable optical attenuator), 2×2 thermal-optical switch were successfully designed and fabricated. Based on these, 4×4 and 8×8 SOI optical waveguide integrated switch matrixes are demonstrated for the first time.
