The achievement of chemical diversity and performance regulation of MAX phases primarily relies on solid solution approaches.However,the reported A-site solid solution is undervalued due to their expected chemical dis...The achievement of chemical diversity and performance regulation of MAX phases primarily relies on solid solution approaches.However,the reported A-site solid solution is undervalued due to their expected chemical disorder and compliance with Vegard’s law,as well as discontinuous composition and poor purity.Herein,we synthesized high-purity Ti_(2)(Sn_(x)Al_(1−x))C(x=0–1)solid solution by the feasible pressureless sintering,enabling us to investigate their property evolution upon the A-site composition.The formation mechanism of Ti_(2)(Sn_(x)Al_(1−x))C was revealed by thermal analysis,and crystal parameters were determined by Rietveld refinement of X-ray diffraction(XRD).The lattice constant(a)adheres to Vegard’s law,while the lattice constant(c)and internal free parameter(zM)have noticeable deviations from the law,which is caused by the significant nonlinear distortion of Ti_(6)C octahedron as Al atoms are substituted by Sn atoms.Also,the deviation also results in nonlinear changes in their physicochemical properties,which means that the solid solution often exhibits better performance than end members,such as hardness,electrical conductivity,and corrosion resistance.This work offers insights into the deviation from Vegard’s law observed in the A-site solid solution and indicates that the solid solution with enhanced performance may be obtained by tuning the A-site composition.展开更多
Cadmium Cobalt Sulphide (CdxCo1-xS) thin film was deposited on microscopic glass substrate using chemical bath deposition technique at room temperature from aqueous solutions of Cadmium Chloride, Cobalt Chloride and T...Cadmium Cobalt Sulphide (CdxCo1-xS) thin film was deposited on microscopic glass substrate using chemical bath deposition technique at room temperature from aqueous solutions of Cadmium Chloride, Cobalt Chloride and Thiourea in which ammonium solution was used as complexing agents. The optical properties were characterized using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200 - 1000 nm. We report the deposition and optimization of the growth parameter with respect to time which showed that the band gap energy and the composition verified from the extended Vegard’s law are highly dependent on deposition time. The average transmittance of the film in VIS-NIR region ranges between 30% and 78% with absorbance range of 0.15 - 0.47 within the same wavelength range. The film was also observed to exhibit poor reflectance (11 x = 0.75;0.83 and 0.94), respectively. Other optical and dielectric properties of the films were also characterized. Based on the exhibited properties of the film, it can be concluded that it is a promising material for selective coatings for solar cells;effective coatings for poultry houses;use as antireflective coating materials, and for fabrication of optoelectronic devices.展开更多
In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with t...In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.展开更多
基金This work was financially supported by the National Natural Science Foundation of China(No.52171033)the Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.KYCX22_0247).
文摘The achievement of chemical diversity and performance regulation of MAX phases primarily relies on solid solution approaches.However,the reported A-site solid solution is undervalued due to their expected chemical disorder and compliance with Vegard’s law,as well as discontinuous composition and poor purity.Herein,we synthesized high-purity Ti_(2)(Sn_(x)Al_(1−x))C(x=0–1)solid solution by the feasible pressureless sintering,enabling us to investigate their property evolution upon the A-site composition.The formation mechanism of Ti_(2)(Sn_(x)Al_(1−x))C was revealed by thermal analysis,and crystal parameters were determined by Rietveld refinement of X-ray diffraction(XRD).The lattice constant(a)adheres to Vegard’s law,while the lattice constant(c)and internal free parameter(zM)have noticeable deviations from the law,which is caused by the significant nonlinear distortion of Ti_(6)C octahedron as Al atoms are substituted by Sn atoms.Also,the deviation also results in nonlinear changes in their physicochemical properties,which means that the solid solution often exhibits better performance than end members,such as hardness,electrical conductivity,and corrosion resistance.This work offers insights into the deviation from Vegard’s law observed in the A-site solid solution and indicates that the solid solution with enhanced performance may be obtained by tuning the A-site composition.
文摘Cadmium Cobalt Sulphide (CdxCo1-xS) thin film was deposited on microscopic glass substrate using chemical bath deposition technique at room temperature from aqueous solutions of Cadmium Chloride, Cobalt Chloride and Thiourea in which ammonium solution was used as complexing agents. The optical properties were characterized using the absorbance and transmission measurement from Unico UV-2102 PC spectrophotometer, at normal incidence of light in the wavelength range of 200 - 1000 nm. We report the deposition and optimization of the growth parameter with respect to time which showed that the band gap energy and the composition verified from the extended Vegard’s law are highly dependent on deposition time. The average transmittance of the film in VIS-NIR region ranges between 30% and 78% with absorbance range of 0.15 - 0.47 within the same wavelength range. The film was also observed to exhibit poor reflectance (11 x = 0.75;0.83 and 0.94), respectively. Other optical and dielectric properties of the films were also characterized. Based on the exhibited properties of the film, it can be concluded that it is a promising material for selective coatings for solar cells;effective coatings for poultry houses;use as antireflective coating materials, and for fabrication of optoelectronic devices.
文摘在Si(001)衬底上,以高质量的弛豫Ge薄膜作为缓冲层,先后生长Sn组分x分别为2.5%,5.2%和7.8%的完全应变的三层Ge_(1-x)Sn_x合金薄膜.在Si(001)衬底上直接生长了x分别为0.005,0.016,0.044,0.070和0.155的五个弛豫Ge_(1-x)Sn_x样品.通过卢瑟福背散射谱、高分辨X射线衍射和X射线倒易空间图等方法测量了Ge_(1-x)Sn_x合金的组分与晶格常数.实验得到的晶格常数相对Vegard定律具有较大的正偏离,弯曲系数b=0.211 A.
基金supported by Korea Research Institute of Standards and Science(KRISS–2019–GP2019-0014)。
文摘In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.
