A three-dimensional electrical-thermal coupling model based on the finite element method is applied to study thermal properties of implant-defined vertical cavity surface emitting laser (VCSEL) arrays. Several param...A three-dimensional electrical-thermal coupling model based on the finite element method is applied to study thermal properties of implant-defined vertical cavity surface emitting laser (VCSEL) arrays. Several parameters including inter-element spacing, scales, injected current density and substrate temperature are considered. The actual temperatures obtained through experiment are in excellent agreement with the calculated results, which proves the accuracy of the model. Due to the serious thermal problem, it is essential to design arrays of low self-heating. The analysis can provide a foundation for designing VCSEL arrays in the future.展开更多
Far-field properties dependent on array scale, separation, element width and emitted wavelength are system atically analyzed theoretically and experimentally. An array model based on the finite-difference method is es...Far-field properties dependent on array scale, separation, element width and emitted wavelength are system atically analyzed theoretically and experimentally. An array model based on the finite-difference method is established to simulate the far-field profile of the coherent arrays. Some important conclusions are obtained. To achieve a higher quality beam, it is necessary to decrease separation between elements, or to increase the element width. Higher brightness can be achieved in the array with larger scale. Emitted wavelength also has an influence on the far-field profile. These analyses can be extended to the future design of coherent vertical cavity surface emitting laser arrays.展开更多
The polarization of traditional photonic crystal(PC) vertical cavity surface emitting laser(VCSEL) is uncontrollable,resulting in the bit error increasing easily.Elliptical hole photonic crystal can control the tr...The polarization of traditional photonic crystal(PC) vertical cavity surface emitting laser(VCSEL) is uncontrollable,resulting in the bit error increasing easily.Elliptical hole photonic crystal can control the transverse mode and polarization of VCSEL efficiently.We analyze the far field divergence angle,and birefringence of elliptical hole PC VCSEL.When the ratio of minor axis to major axis b/a = 0.7,the PC VCSEL can obtain single mode and polarization.According to the simulation results,we fabricate the device successfully.The output power is 1.7 mW,the far field divergence angle is less than 10°,and the side mode suppression ratio is over 30 dB.The output power in the Y direction is 20 times that in the X direction.展开更多
Beam steering in implant defined coherently coupled vertical cavity surface emitting laser (VCSEL) arrays is simulated using the FDTD solution software. Angular deflection dependent on relative phase differences amo...Beam steering in implant defined coherently coupled vertical cavity surface emitting laser (VCSEL) arrays is simulated using the FDTD solution software. Angular deflection dependent on relative phase differences among elements, inter-element spacing, element size and emitted wavelength is analyzed detailedly and systematically. We design and fabricate 1×2 implant defined VCSEL arrays for optimum beam steering performance. Electroni- cally controlled beam steering with a maximum deflection angle of 1.6° is successfully achieved in the 1 × 2 VCSEL arrays. The percentage of the power in the central lobe is above 39% when steering. The results show that the steering is controllable. Compared with other beam steering methods, the fabrication process is simple and of low cost.展开更多
In this work, the characteristics of the photonic crystal tunneling injection quantum dot vertical cavity surface emitting lasers(Ph C-TIQD-VCSEL) are studied through analyzing a modified modulation transfer functio...In this work, the characteristics of the photonic crystal tunneling injection quantum dot vertical cavity surface emitting lasers(Ph C-TIQD-VCSEL) are studied through analyzing a modified modulation transfer function. The function is based on the rate equations describing the carrier dynamics at different energy levels of dot and injector well. Although the frequency modulation response component associated with carrier dynamics in wetting layer(WL) and at excited state(ES) levels of dots limits the total bandwidth in conventional QD-VCSEL, our study shows that it can be compensated for by electron tunneling from the injector well into the dot in TIQD structure. Carrier back tunneling time is one of the most important parameters, and by increment of that, the bias current dependence of the total bandwidth will be insignificant. It is proved that at high bias current, the limitation of the WL-ES level plays an important role in reducing the total bandwidth and results in rollovers on 3-d B bandwidth-I curves. In such a way, for smaller air hole diameter of photonic crystal, the effect of this reduction is stronger.展开更多
Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region...Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.展开更多
A review is presented of the state-of-the-art in vertical cavity semiconductor optical amplifiers (VCSOAs), focusing in particular on recent developments in theoretical analysis, wavelengths of operation, materials sy...A review is presented of the state-of-the-art in vertical cavity semiconductor optical amplifiers (VCSOAs), focusing in particular on recent developments in theoretical analysis, wavelengths of operation, materials systems, potential applications and a design example.展开更多
It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally diff...It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty h, deriving the parameters relat^i~g to the quantum well structure. In this paper, we describe an efl:icient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AllnGaAs-AIGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.展开更多
The characteristics of the photonic crystal vertical cavity surface emitting lasers(PhC-VCSELs) were investigated by using the full vector finite-difference time-domain(FDTD) method through the transverse mode los...The characteristics of the photonic crystal vertical cavity surface emitting lasers(PhC-VCSELs) were investigated by using the full vector finite-difference time-domain(FDTD) method through the transverse mode loss analysis. PhC-VCSELs with different photonic crystal structures were analyzed theoretically and experimentally. Through combining the dual mode confinement of oxide aperture and seven-point-defect photonic crystal structure, the PhC-VCSELs with low threshold current of 0.9 mA and maximum output power of 3.1 mW operating in single fundamental mode were demonstrated. Mode loss analysis method was proven as a reliable and useful way to analyze and optimize the PhC-VCSELs.展开更多
In this paper, stable single-mode operation at high temperatures is produced by the surface-relief-integrated vertical cavity surface emitting laser(VCSEL). The gain-cavity mode detuning technique is employed to rea...In this paper, stable single-mode operation at high temperatures is produced by the surface-relief-integrated vertical cavity surface emitting laser(VCSEL). The gain-cavity mode detuning technique is employed to realize high operating temperatures for the VCSEL. The surface relief is etched in the centre of the top side as a mode discriminator for the fundamental mode output, and the threshold current minimum is 1.94 mA at high temperatures by the gain-cavity mode detuning technique. Maximum single-fundamental-mode output power of 0.45 mW at 80℃ is obtained, and the side mode suppression ratios(SMSRs) are more than 30 dB with increasing temperature and current, respectively.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61376049,61076044,61107026,61204011and U1037602the Natural Science Foundation of Beijing under Grant Nos 4132006,4102003,and 4112006+1 种基金the Scientific Research Fund Project of Municipal Education Commission of Beijing under Grant No KM201210005004the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20121103110018
文摘A three-dimensional electrical-thermal coupling model based on the finite element method is applied to study thermal properties of implant-defined vertical cavity surface emitting laser (VCSEL) arrays. Several parameters including inter-element spacing, scales, injected current density and substrate temperature are considered. The actual temperatures obtained through experiment are in excellent agreement with the calculated results, which proves the accuracy of the model. Due to the serious thermal problem, it is essential to design arrays of low self-heating. The analysis can provide a foundation for designing VCSEL arrays in the future.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61376049,61076044,61107026 and 61204011the Scientific Research Fund Project of Municipal Education Commission of Beijing under Grant No PXM2014-014204-07-000018
文摘Far-field properties dependent on array scale, separation, element width and emitted wavelength are system atically analyzed theoretically and experimentally. An array model based on the finite-difference method is established to simulate the far-field profile of the coherent arrays. Some important conclusions are obtained. To achieve a higher quality beam, it is necessary to decrease separation between elements, or to increase the element width. Higher brightness can be achieved in the array with larger scale. Emitted wavelength also has an influence on the far-field profile. These analyses can be extended to the future design of coherent vertical cavity surface emitting laser arrays.
基金Project supported by the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402)the Beijing Municipal Natural Science Foundation,China (Grant Nos. 4092007,4112006,4102003,and 4132006)+1 种基金the National Natural Science Foundation of China (Grant Nos. 61076044,61036002,61036009,and 60978067)the Doctoral Fund of the Ministry of Education of China (Grant No. 20121103110018)
文摘The polarization of traditional photonic crystal(PC) vertical cavity surface emitting laser(VCSEL) is uncontrollable,resulting in the bit error increasing easily.Elliptical hole photonic crystal can control the transverse mode and polarization of VCSEL efficiently.We analyze the far field divergence angle,and birefringence of elliptical hole PC VCSEL.When the ratio of minor axis to major axis b/a = 0.7,the PC VCSEL can obtain single mode and polarization.According to the simulation results,we fabricate the device successfully.The output power is 1.7 mW,the far field divergence angle is less than 10°,and the side mode suppression ratio is over 30 dB.The output power in the Y direction is 20 times that in the X direction.
基金Supported by the‘Supporting First Action’Joint Foundation for Outstanding Postdoctoral Program under Grant Nos Y7YBSH0001 and Y7BSH14001the National Natural Science Foundation of China under Grant No 61434006the National Key Basic Research Program of China under Grant No 2017YFB0102302
文摘Beam steering in implant defined coherently coupled vertical cavity surface emitting laser (VCSEL) arrays is simulated using the FDTD solution software. Angular deflection dependent on relative phase differences among elements, inter-element spacing, element size and emitted wavelength is analyzed detailedly and systematically. We design and fabricate 1×2 implant defined VCSEL arrays for optimum beam steering performance. Electroni- cally controlled beam steering with a maximum deflection angle of 1.6° is successfully achieved in the 1 × 2 VCSEL arrays. The percentage of the power in the central lobe is above 39% when steering. The results show that the steering is controllable. Compared with other beam steering methods, the fabrication process is simple and of low cost.
文摘In this work, the characteristics of the photonic crystal tunneling injection quantum dot vertical cavity surface emitting lasers(Ph C-TIQD-VCSEL) are studied through analyzing a modified modulation transfer function. The function is based on the rate equations describing the carrier dynamics at different energy levels of dot and injector well. Although the frequency modulation response component associated with carrier dynamics in wetting layer(WL) and at excited state(ES) levels of dots limits the total bandwidth in conventional QD-VCSEL, our study shows that it can be compensated for by electron tunneling from the injector well into the dot in TIQD structure. Carrier back tunneling time is one of the most important parameters, and by increment of that, the bias current dependence of the total bandwidth will be insignificant. It is proved that at high bias current, the limitation of the WL-ES level plays an important role in reducing the total bandwidth and results in rollovers on 3-d B bandwidth-I curves. In such a way, for smaller air hole diameter of photonic crystal, the effect of this reduction is stronger.
基金This work was supported by the National Natural Science Foundation of China(Nos.U21A20493,62104204,and 62234011)the National Key Research and Development Program of China(No.2017YFE0131500)the President’s Foundation of Xiamen University(No.20720220108).
文摘Room temperature low threshold lasing of green GaNbased vertical cavity surface emitting laser(VCSEL)was demonstrated under continuous wave(CW)operation.By using self-formed InGaN quantum dots(QDs)as the active region,the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm^(-2),the lowest ever reported.The QD epitaxial wafer featured with a high IQE of 69.94%and theδ-function-like density of states plays an important role in achieving low threshold current.Besides,a short cavity of the device(~4.0λ)is vital to enhance the spontaneous emission coupling factor to 0.094,increase the gain coefficient factor,and decrease the optical loss.To improve heat dissipation,AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding.The results provide important guidance to achieving high performance GaN-based VCSELs.
文摘A review is presented of the state-of-the-art in vertical cavity semiconductor optical amplifiers (VCSOAs), focusing in particular on recent developments in theoretical analysis, wavelengths of operation, materials systems, potential applications and a design example.
文摘It is important to determine quantitatively the internal carrier loss arising from heating and barrier height variation in a vertical-cavity surface-emitting quantum well laser (VCSEL). However, it is generally difficult to realize this goal using purely theoretical formulas due to difficulty h, deriving the parameters relat^i~g to the quantum well structure. In this paper, we describe an efl:icient approach to characterizing and calculating the carrier loss due to the heating and the barrier height change in the VCSEL. In the method, the thermal carrier loss mechanism is combined with gain measurement and calculation. The carrier loss is re-characterized in a calculable form by constructing the threshold current and gain detuning-related loss current using the measured gain data and then substituting them for the quantum well-related parameters in the formula. The result can be expressed as a product of an exponential weight factor linked to the barrier height change and the difference between the threshold current and gain detuning-related loss current. The gain variation at cavity frequency due to thermal carrier loss and gain detuning processes is measured by using an AllnGaAs-AIGaAs VCSEL structure. This work provides a useful approach to analysing threshold and loss properties of the VCSEL, particularly, gain offset design for high temperature operation of VCSELs.
基金supported by the National Basic Research Program of China(Grant Nos.2010CB934104,2009CB320300,and 2011CBA00608)the National Natural Foundation of China(Grant Nos.61604007,61378058,61376049,61575008,and 61574011)
文摘The characteristics of the photonic crystal vertical cavity surface emitting lasers(PhC-VCSELs) were investigated by using the full vector finite-difference time-domain(FDTD) method through the transverse mode loss analysis. PhC-VCSELs with different photonic crystal structures were analyzed theoretically and experimentally. Through combining the dual mode confinement of oxide aperture and seven-point-defect photonic crystal structure, the PhC-VCSELs with low threshold current of 0.9 mA and maximum output power of 3.1 mW operating in single fundamental mode were demonstrated. Mode loss analysis method was proven as a reliable and useful way to analyze and optimize the PhC-VCSELs.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61434005,61474118,11674314,51672264,and 11404326)the Science and Technology Program of Jilin Province,China(Grant No.20150203011GX)+1 种基金the Science and Technology Program of Changchun City,China(Grant No.15SS02)the Youth Innovation Promotion Association of China(Grant No.2017260)
文摘In this paper, stable single-mode operation at high temperatures is produced by the surface-relief-integrated vertical cavity surface emitting laser(VCSEL). The gain-cavity mode detuning technique is employed to realize high operating temperatures for the VCSEL. The surface relief is etched in the centre of the top side as a mode discriminator for the fundamental mode output, and the threshold current minimum is 1.94 mA at high temperatures by the gain-cavity mode detuning technique. Maximum single-fundamental-mode output power of 0.45 mW at 80℃ is obtained, and the side mode suppression ratios(SMSRs) are more than 30 dB with increasing temperature and current, respectively.