We present in this paper a new formulation of the iterative method FWCIP “Fast Wave Concept Iterative Process” based on the wave concept. It calculates the electromagnetic parameters of a planar structure including ...We present in this paper a new formulation of the iterative method FWCIP “Fast Wave Concept Iterative Process” based on the wave concept. It calculates the electromagnetic parameters of a planar structure including a via-hole. This is modelled by the electromagnetic field that it creates in the structure. The validation of results found by this new formulation is ensured by comparison with those obtained by HFSS “high frequency structural simulator” software from Ansoft. They show that they are in good agreement.展开更多
A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photor...A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2 and Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 μm/min was obtained and the etched profiles were op- timized.展开更多
文摘We present in this paper a new formulation of the iterative method FWCIP “Fast Wave Concept Iterative Process” based on the wave concept. It calculates the electromagnetic parameters of a planar structure including a via-hole. This is modelled by the electromagnetic field that it creates in the structure. The validation of results found by this new formulation is ensured by comparison with those obtained by HFSS “high frequency structural simulator” software from Ansoft. They show that they are in good agreement.
基金Supported by the National Natural Science Foundation of China (Grant No. 60506012)Beijing Education Committee Project (Grant No. KZ200510005003)+2 种基金Beijing Municipal Talented Person Education Plan Item (Grant No. 05002015200504)Beijing Municipal Scientific New-star Plan (Grant No. 2005A11)the Hi-Tech Research and Development Program of China (Grant No. 2006AA03A121)
文摘A high etch rate GaAs via-hole process was studied in an inductively coupled plasma system using Cl2/BCl3 gas system. The effects of process parameters on the GaAs etch rate were investigated. The influences of photoresist SiO2 and Ni masks on the resultant profiles were also studied by scanning electron microscopy. A maximum etch rate of 8.9 μm/min was obtained and the etched profiles were op- timized.
