The effect ofelectromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such ...The effect ofelectromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such polarization charge density in device performance is numerically investigated and further compared with the experimental results of internal quantum efficiency of three different devices in consideration.展开更多
文摘The effect ofelectromechanical fields, i.e., polarization fields, on the efficiency droop of GaN-based light-emitting diodes is presented using both experimental and numerical analyses. The role of incorporating such polarization charge density in device performance is numerically investigated and further compared with the experimental results of internal quantum efficiency of three different devices in consideration.
