Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to fin...Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nbx Si1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current–voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.展开更多
Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microw...Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microwave. By selecting different parts of the array, it can output a voltage from 1 μV to 256 μV. The flat region of the voltage steps is over 200 μA.This kind of array is useful for potential microvolt applications.展开更多
Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage....Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage.For almost all applications,high-quality JJ arrays must be realized in a small chip area.This study proposes vertically quadruplestacked Nb/(NbxSi1-x/Nb)4 JJs to increase the integration density of junctions in an array.The current–voltage(I–V)characteristics of a single stack of Nb/(NbxSi1??x/Nb)4 JJs have been measured at 4.2 K.The uniformity of junctions in one stack and the uniformity of several stacks over the entire 2 inches wafer have been analyzed.By optimizing the fabrication parameters,a large-scale quadruple-stacked Nb/(NbxSi1??x/Nb)4 array consisting of 400000 junctions is realized.Good DC I–V characteristics are obtained,indicating the good uniformity of the large-scale array.展开更多
基金Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAK15B00)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401418)the Basic Research Foundation of National Institute of Metrology of China(Grant No.20-AKY1415)
文摘Owing to the adjustable characteristics and superior etching properties of co-sputtered Nbx Si1-x film, we are trying to fabricate Nb/Nbx Si1-x/Nb Josephson junction arrays for voltage standard. It is important to find the suitable Nbx Si1-x barrier for the junctions. Josephson junctions with different barrier content are fabricated. Current–voltage characteristics are measured and analyzed. It is demonstrated in this paper that critical current can be adjusted by using different barrier content and thickness. Shapiro steps of five hundred junctions in series are observed.
基金Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China(Grant No.2011BAK15B00)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61401418)the Basic Research Foundation of National Institute of Metrology of China(Grant No.20-AKY1415)
文摘Josephson junction array chips for microvolt applications have been designed and fabricated. A voltage step as small as 1 μV has been observed for a single junction in the array when it is driven by 483.59 MHz microwave. By selecting different parts of the array, it can output a voltage from 1 μV to 256 μV. The flat region of the voltage steps is over 200 μA.This kind of array is useful for potential microvolt applications.
基金National Key R&D Program of China(Grant No.2016YFF0200402).
文摘Large-scale Josephson junction(JJ)arrays are essential in many applications,especially quantum voltage standards application for which hundreds of thousands of junctions are required to realize a high quantum voltage.For almost all applications,high-quality JJ arrays must be realized in a small chip area.This study proposes vertically quadruplestacked Nb/(NbxSi1-x/Nb)4 JJs to increase the integration density of junctions in an array.The current–voltage(I–V)characteristics of a single stack of Nb/(NbxSi1??x/Nb)4 JJs have been measured at 4.2 K.The uniformity of junctions in one stack and the uniformity of several stacks over the entire 2 inches wafer have been analyzed.By optimizing the fabrication parameters,a large-scale quadruple-stacked Nb/(NbxSi1??x/Nb)4 array consisting of 400000 junctions is realized.Good DC I–V characteristics are obtained,indicating the good uniformity of the large-scale array.
