Influence of substrate bias voltage on the microstructure of nc-SiO_x:H film

Amorphous silicon oxide containing nanocrystalline silicon grain（nc-SiOx：H） films are prepared by a plasmaenhanced chemical vapor deposition technique at different negative substrate bias voltages.The influence of the bias voltage applied to the substrate on the microstructure is investigated.The analysis of x-ray diffraction spectra evidences the in situ growth of nanocrystalline Si.The grain size can be well controlled by varying the substrate bias voltage,and the largest size is obtained at 60 V.Fourier transform infrared spectra studies on the microstructure evolutions of the nc-SiOx：H films suggest that the absorption peak intensities,which are related to the defect densities,can be well controlled.It can be attributed to the fact that the negative bias voltage provides a useful way to change the energies of the particles in the deposition process,which can provide sufficient driving force for the diffusion and movement for the species on the growing surface and effectively passivate the dangling bonds.Also the larger grain size and lower band gap,which will result in better photosensitivity,can also be obtained with a moderate substrate bias voltage of 60 V.

EFFECT OF GRID BIAS ON DEPOSITION OF NANOCRYSTALLINE DIAMOND FILMS

A positive grid bias and a negative substrate bias voltages are applied to the self-made hot filament chemical vapor deposited （HFCVD） system. The high quality nanocrystalline diamond （NCD） film is successfully deposited by double bias voltage nucleation and grid bias voltage growth. The Micro-Raman XRD SEM and AFM are used to investigate the diamond grain size, microstructure, surface morphology, and nucleation density. Results show that the obtained NCD has grain size of about 20 nm. The effect of grid bias voltage on the nucleation and the diamond growth is studied. Experimental results and theoretical analysis show that the positive grid bias increases the plasma density near the hot filaments, enhances the diamond nucleation, keeps the nanometer size of the diamond grains, and improves the quality of diamond film.

Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology（SB） is reported.The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field.The substrate bias strengthens the charge share effect of the drift region near the source,and the vertical electric field peak under the drain is decreased,which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region.The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97%compared with a conventional LDMOS,while maintaining a low on-resistance.

Backgating effect in GaAs FETs with a channel–semi-insulating substrate boundary

This study focuses on modeling the effects of deep hole traps, mainly the effect of the substrate（backgating effect） in a GaAs transistor MESFT. This effect is explained by the existence, at the interface, of a space charge zone. Any modulation in this area leads to response levels trapping the holes therein to the operating temperature. We subsequently developed a model treating the channel substrate interface as an N–P junction, allowing us to deduce the time dependence of the component parameters of the total resistance R ds, the pinch-off voltage V P, channel resistance, fully open R co and the parasitic series resistance R S to bind the effect trap holes H1and H0. When compared with the experimental results, the values of the R DS（t S/ model for both traps show that there is an agreement between theory and experiment; it has inferred parameter traps, namely the density and the time constant of the trap. This means that a space charge region exists at the channel–substrate interface and that the properties can be approximated to an N–P junction.

Tribological properties of multilayer tetrahedral amorphous carbon coatings deposited by filtered cathodic vacuum arc deposition

Tetrahedral amorphous carbon(ta‐C)has emerged as an excellent coating material for improving the reliability of application components under high normal loads.Herein,we present the results of our investigations regarding the mechanical and tribological properties of a 2‐μm‐thick multilayer ta‐C coating on high‐speed steel substrates.Multilayers composed of alternating soft and hard layers are fabricated using filtered a cathodic vacuum arc with alternating substrate bias voltages(0 and 100 V or 0 and 150 V).The thickness ratio is discovered to be 1:3 for the sp2‐rich and sp3‐rich layers.The results show that the hardness and elastic modulus of the multilayer ta‐C coatings increase with the sp3 content of the hard layer.The hardness reached approximately 37 GPa,whereas an improved toughness and a higher adhesion strength(>29 N)are obtained.The friction performance(μ=0.07)of the multilayer coating is similar to that of the single layer ta‐C thick coating,but the wear rate(0.13×10^(–6) mm^(3)/(N∙m))improved under a high load of 30 N.We further demonstrate the importance of the multilayer structure in suppressing crack propagation and increasing the resistance to plastic deformation(H3/E2)ratio.