By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length a...By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.展开更多
Concentration of elements or element groups in a geological body is the result of multiple stages of rockforming and ore-forming geological processes.An ore-forming element group can be identified by PCA(principal com...Concentration of elements or element groups in a geological body is the result of multiple stages of rockforming and ore-forming geological processes.An ore-forming element group can be identified by PCA(principal component analysis)and be separated into two components using BEMD(bi-dimensional empirical mode decomposition):(1)a high background component which represents the ore-forming background developed in rocks through various geological processes favorable for mineralization(i.e.magmatism,sedimentation and/or metamorphism);(2)the anomaly component which reflects the oreforming anomaly that is overprinted on the high background component developed during mineralization.Anomaly components are used to identify ore-finding targets more effectively than ore-forming element groups.Three steps of data analytical procedures are described in this paper;firstly,the application of PCA to establish the ore-forming element group;secondly,using BEMD on the o re-forming element group to identify the anomaly components created by different types of mineralization processes;and finally,identifying ore-finding targets based on the anomaly components.This method is applied to the Tengchong tin-polymetallic belt to delineate ore-finding targets,where four targets for Sn(W)and three targets for Pb-Zn-Ag-Fe polymetallic mineralization are identified and defined as new areas for further prospecting.It is shown that BEMD combined with PCA can be applied not only in extracting the anomaly component for delineating the ore-finding target,but also in extracting the residual component for identifying its high background zone favorable for mineralization from its oreforming element group.展开更多
文摘By complementing the equivalent oxide thickness （EOT） of a 1.7nm nitride/oxynitride （N/O） stack gate dielectric （EOT- 1.7nm） with a W/TiN metal gate electrode,metal gate CMOS devices with sub-100nm gate length are fabricated in China for the first time. The key technologies adopted to restrain SCE and to improve drive ability include a 1.7nm N/O stack gate dielectric, non-CMP planarization technology, a T-type refractory W/TiN metal stack gate electrode, and a novel super steep retrograde channel doping using heavy ion implantation and a double sidewall scheme. Using these optimized key technologies, high performance 95nm metal gate CMOS devices with excellent SCE and good driving ability are fabricated. Under power supply voltages of VDS ± 1.5V and VGS± 1.8V,drive currents of 679μA/μm for nMOS and - 327μA/μm for pMOS are obtained. A subthreshold slope of 84.46mV/dec, DIBL of 34.76mV/V, and Vth of 0.26V for nMOS, and a subthreshold slope of 107.4mV/dec,DIBL of 54.46mV/V, and Vth of 0.27V for pMOS are achieved. These results show that the combined technology has indeed thoroughly eliminated the boron penetration phenomenon and polysilicon depletion effect ,effectively reduced gate tunneling leakage, and improved device reliability.
基金funded by the Na-tional Natural Science Foundation of China(Grant Nos.41672329,41272365)the National Key Research and Development Project of China(Grant No.2016YFC0600509)the Project of China Geological Survey(Grant No.1212011120341)
文摘Concentration of elements or element groups in a geological body is the result of multiple stages of rockforming and ore-forming geological processes.An ore-forming element group can be identified by PCA(principal component analysis)and be separated into two components using BEMD(bi-dimensional empirical mode decomposition):(1)a high background component which represents the ore-forming background developed in rocks through various geological processes favorable for mineralization(i.e.magmatism,sedimentation and/or metamorphism);(2)the anomaly component which reflects the oreforming anomaly that is overprinted on the high background component developed during mineralization.Anomaly components are used to identify ore-finding targets more effectively than ore-forming element groups.Three steps of data analytical procedures are described in this paper;firstly,the application of PCA to establish the ore-forming element group;secondly,using BEMD on the o re-forming element group to identify the anomaly components created by different types of mineralization processes;and finally,identifying ore-finding targets based on the anomaly components.This method is applied to the Tengchong tin-polymetallic belt to delineate ore-finding targets,where four targets for Sn(W)and three targets for Pb-Zn-Ag-Fe polymetallic mineralization are identified and defined as new areas for further prospecting.It is shown that BEMD combined with PCA can be applied not only in extracting the anomaly component for delineating the ore-finding target,but also in extracting the residual component for identifying its high background zone favorable for mineralization from its oreforming element group.
