Z-scheme semiconductors are a promising class of photocatalysts for hydrogen generation.In this work,Z-scheme semiconductors composed of WO3-x quantum dots supported on TiO2（WO3-xQDS/TiO2） were fabricated by solvoth...Z-scheme semiconductors are a promising class of photocatalysts for hydrogen generation.In this work,Z-scheme semiconductors composed of WO3-x quantum dots supported on TiO2（WO3-xQDS/TiO2） were fabricated by solvothermal and hydrogen-reduction methods.Characterization by transmission electron microscopy and X-ray diffraction indicated that the amount and size of the WO3-x QDs could be tuned by modulating the addition of the W precursor.Evidence from X-ray photoelectron spectroscopy and photoluminescence spectroscopy suggested that the hydrogen reduction of the composite induced the formation of oxygen vacancy（W^5＋/Vo） defects in WO3.These defects led to ohmic contact between WO3-x and TiO2,which altered the charge-transfer pathway from type Ⅱ heterojunction to Z-scheme,and maintained the highly reductive and oxidative ability of TiO2 and WO3-x,respectively.Therefore,the Z-scheme sample showed 1.3-fold higher photoactivity than pure TiO2 in hydrogen generation.These results suggest that the formation of W^5＋/Vo defects at the interface is highly beneficial for the fabrication of Z-scheme photocatalysts.展开更多
基金supported by the National Natural Science Foundation of China (21506156, 21676193)the Tianjin Municipal Natural Science Foundation (15JCZDJC37300, 16JCQNJC05200)~~
文摘Z-scheme semiconductors are a promising class of photocatalysts for hydrogen generation.In this work,Z-scheme semiconductors composed of WO3-x quantum dots supported on TiO2（WO3-xQDS/TiO2） were fabricated by solvothermal and hydrogen-reduction methods.Characterization by transmission electron microscopy and X-ray diffraction indicated that the amount and size of the WO3-x QDs could be tuned by modulating the addition of the W precursor.Evidence from X-ray photoelectron spectroscopy and photoluminescence spectroscopy suggested that the hydrogen reduction of the composite induced the formation of oxygen vacancy（W^5＋/Vo） defects in WO3.These defects led to ohmic contact between WO3-x and TiO2,which altered the charge-transfer pathway from type Ⅱ heterojunction to Z-scheme,and maintained the highly reductive and oxidative ability of TiO2 and WO3-x,respectively.Therefore,the Z-scheme sample showed 1.3-fold higher photoactivity than pure TiO2 in hydrogen generation.These results suggest that the formation of W^5＋/Vo defects at the interface is highly beneficial for the fabrication of Z-scheme photocatalysts.
