In this study, to fabricate dual-pore scaffolds with interconnected pores, Non-solvent Induced Phase Separation （NIPS） and Wire-Network Molding （WNM） techniques were combined. First, a mold with uniform slits was ...In this study, to fabricate dual-pore scaffolds with interconnected pores, Non-solvent Induced Phase Separation （NIPS） and Wire-Network Molding （WNM） techniques were combined. First, a mold with uniform slits was prepared, and needles were inserted into the mold. Subsequently, polycaprolactone （PCL） pellets were dissolved in tetrahydrofuran （THF） at a specified ratio. The slurry was mixed using hot plate stirrer at 1200 rpm for 24 hours at 40 ~C. The PCL slurry was subsequently injected into the mold. Thereafter, to exchange the THF （solvent） with the ethanol （non-solvent）, the mold was soaked in an ethanol bath. After removing the mold from the ethanol bath, the needles were removed from the mold. Consequently, dual-pore scaffold with interconnected pores was obtained. The surface morphology of the fabricated scaffolds were observed using Scanning Electron Microscope （SEM）. Moreover, cell culture experiments were performed using the CCK-8 assay, and the characteristics of cells grown on the dual-pore scaffolds were assessed and were compared with the NIPS-based 3D plotting scaffold.展开更多
An accelerated evaluation method for the SRAM cell write margin is proposed using the conventional Write Noise Margin (WNM) definition based on the “butterfly curve”. The WNM is measured under a lower word line volt...An accelerated evaluation method for the SRAM cell write margin is proposed using the conventional Write Noise Margin (WNM) definition based on the “butterfly curve”. The WNM is measured under a lower word line voltage than the power supply voltage VDD. A lower word line voltage is chosen in order to make the access transistor operate in the saturation mode over a wide range of threshold voltage variation. The final WNM at the VDD word line voltage, the Accelerated Write Noise Margin (AWNM), is obtained by shifting the measured WNM at the lower word line voltage. The WNM shift amount is determined from the measured WNM dependence on the word line voltage. As a result, the cumulative frequency of the AWNM displays a normal distribution. Together with the maximum likelihood method, a normal distribution of the AWNM drastically improves development efficiency because the write failure probability can be estimated from a small number of samples. The effectiveness of the proposed method is verified using the Monte Carlo simulation.展开更多
文摘In this study, to fabricate dual-pore scaffolds with interconnected pores, Non-solvent Induced Phase Separation （NIPS） and Wire-Network Molding （WNM） techniques were combined. First, a mold with uniform slits was prepared, and needles were inserted into the mold. Subsequently, polycaprolactone （PCL） pellets were dissolved in tetrahydrofuran （THF） at a specified ratio. The slurry was mixed using hot plate stirrer at 1200 rpm for 24 hours at 40 ~C. The PCL slurry was subsequently injected into the mold. Thereafter, to exchange the THF （solvent） with the ethanol （non-solvent）, the mold was soaked in an ethanol bath. After removing the mold from the ethanol bath, the needles were removed from the mold. Consequently, dual-pore scaffold with interconnected pores was obtained. The surface morphology of the fabricated scaffolds were observed using Scanning Electron Microscope （SEM）. Moreover, cell culture experiments were performed using the CCK-8 assay, and the characteristics of cells grown on the dual-pore scaffolds were assessed and were compared with the NIPS-based 3D plotting scaffold.
文摘An accelerated evaluation method for the SRAM cell write margin is proposed using the conventional Write Noise Margin (WNM) definition based on the “butterfly curve”. The WNM is measured under a lower word line voltage than the power supply voltage VDD. A lower word line voltage is chosen in order to make the access transistor operate in the saturation mode over a wide range of threshold voltage variation. The final WNM at the VDD word line voltage, the Accelerated Write Noise Margin (AWNM), is obtained by shifting the measured WNM at the lower word line voltage. The WNM shift amount is determined from the measured WNM dependence on the word line voltage. As a result, the cumulative frequency of the AWNM displays a normal distribution. Together with the maximum likelihood method, a normal distribution of the AWNM drastically improves development efficiency because the write failure probability can be estimated from a small number of samples. The effectiveness of the proposed method is verified using the Monte Carlo simulation.
