Corn rod-like WO<sub>3</sub> nanomaterials were successfully synthesized by a simple hydrothermal method. The morphology, structure and optical absorption properties of the prepared samples were characteri...Corn rod-like WO<sub>3</sub> nanomaterials were successfully synthesized by a simple hydrothermal method. The morphology, structure and optical absorption properties of the prepared samples were characterized by SEM, XRD, FTIR and UV-Vis-DRS. The WO<sub>3</sub> materials were corn rod-like morphology with about 800 nm for length and 150 nm for diameter, especially there were plenty of corn particles (about 20 nm) on the surface of corn rods. The X-ray diffraction peaks of the products corresponded with WO<sub>3</sub> standard card, and the characteristic peak of W-O bond was found in the infrared spectrum. The absorption band edge of the products was about 480 nm, indicating their potential visible-light-induced photocatalytic activity. In situ FTIR technology research showed that the prepared WO<sub>3</sub> nanomaterials had visible photocatalytic activity to gas-phase toluene. After a photocatalytic reaction for 8 hours toluene was effectively degraded, and carboxylic acid and aldehyde could be regarded as the intermediate products, and CO<sub>2</sub> was produced as the final product during the reaction process.展开更多
Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode ...Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
文摘Corn rod-like WO<sub>3</sub> nanomaterials were successfully synthesized by a simple hydrothermal method. The morphology, structure and optical absorption properties of the prepared samples were characterized by SEM, XRD, FTIR and UV-Vis-DRS. The WO<sub>3</sub> materials were corn rod-like morphology with about 800 nm for length and 150 nm for diameter, especially there were plenty of corn particles (about 20 nm) on the surface of corn rods. The X-ray diffraction peaks of the products corresponded with WO<sub>3</sub> standard card, and the characteristic peak of W-O bond was found in the infrared spectrum. The absorption band edge of the products was about 480 nm, indicating their potential visible-light-induced photocatalytic activity. In situ FTIR technology research showed that the prepared WO<sub>3</sub> nanomaterials had visible photocatalytic activity to gas-phase toluene. After a photocatalytic reaction for 8 hours toluene was effectively degraded, and carboxylic acid and aldehyde could be regarded as the intermediate products, and CO<sub>2</sub> was produced as the final product during the reaction process.
基金This work was supported by the High Level Talents Project Fund of Hainan Basic and Applied Research Program(NATURAL SCIENCE)(Grant No.2019RC118).
文摘Antimony selenide(Sb_(2)Se_(3))is an emerging solar cell material.Here,we demonstrate that an organic small molecule of 4,4',4''-tris(carbazol-9-yl)-triphenylamine(TCTA)can efficiently passivate the anode interface of the Sb_(2)Se_(3)solar cell.We fabricated the device by the vacuum thermal evaporation,and took ITO/TCTA(3.0 nm)/Sb_(2)Se_(3)(50 nm)/C60(5.0 nm)/Alq3(3.0 nm)/Al as the device architecture,where Alq3 is the tris(8-hydroxyquinolinato)aluminum.By introducing a TCTA layer,the open-circuit voltage is raised from 0.36 to 0.42 V,and the power conversion efficiency is significantly improved from 3.2%to 4.3%.The TCTA layer not only inhibits the chemical reaction between the ITO and Sb_(2)Se_(3)during the annealing process but it also blocks the electron diffusion from Sb_(2)Se_(3)to ITO anode.The enhanced performance is mainly attributed to the suppression of the charge recombination at the anode interface.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
