Two-dimensional(2D)transition metal dichalcogenides(TMD)are atomically thin semiconductors with promising optoelectronic applications across the visible spectrum.However,their intrinsically weak light absorption and t...Two-dimensional(2D)transition metal dichalcogenides(TMD)are atomically thin semiconductors with promising optoelectronic applications across the visible spectrum.However,their intrinsically weak light absorption and the low photoluminescence quantum yield(PLQY)restrict their performance and potential use,especially in ultraviolet(UV)wavelength light ranges.Quantum dots(QD)derived from 2D materials(2D/QD)provide efficient light absorption and emission of which energy can be tuned for desirable light wavelength.In this study,we greatly enhanced the photon absorption and PLQY of monolayer(1L)tungsten disulfide(WS_(2))in the UV range via hybridization with 2D/QD,particularly titanium nitride MXene QD(Ti_(2)N MQD)and graphitic carbon nitride QD(GCNQD).With the hybridization of MQD or GCNQD,1LWS_(2)showed a maximum PL enhancement by 15 times with 300 nm wavelength excitation,while no noticeable enhancement was observed when the excitation photon energy was less than the bandgap of the QD,indicating that UV absorption by the QD played a crucial role in enhancing the light emission of 1L-WS_(2)in our 0D/2D hybrid system.Our findings present a convenient method for enhancing the photo-response of 1L-WS_(2)to UV light and offer exciting possibilities for harvesting UV energy using 1L-TMD.展开更多
The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum ...The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.展开更多
The 2 D nanomaterials have achieved the superlubrication property whatever in solid or liquid lubrication in recent years.However,whether or not the nanosheets can stably disperse in oils and smoothly enter into the a...The 2 D nanomaterials have achieved the superlubrication property whatever in solid or liquid lubrication in recent years.However,whether or not the nanosheets can stably disperse in oils and smoothly enter into the asperity of friction pairs is crucial for exerting the function of antifriction.The structure of 2 D QDs is desirable for addressing these issues due to its smaller 3 D size.In this study,we developed a facile preparation process for WS_(2) QDs with uniform 2 nm size from nanosheets via hydrothermal-assisted grinding approach.The structure of the as-obtained WS_(2) QDs was determined by a series of characterizations.The results showed that the as-obtained WS_(2) QDs exhibited the typical spectrum features of nanosized quantum dot.The results of the tribological performance in grease verified that the average friction coefficient(ACOFs) and wear volume(AWVs) were decreased by 7.89% and 63.90%relative to grease,respectively,exhibiting a preferable friction reducing and wear resistance.展开更多
基金supported by National Research Foundation of Korea (NRF)funded by the Ministry of Education (2021R1A6A1A03039696,2022R1A2C2009412)
文摘Two-dimensional(2D)transition metal dichalcogenides(TMD)are atomically thin semiconductors with promising optoelectronic applications across the visible spectrum.However,their intrinsically weak light absorption and the low photoluminescence quantum yield(PLQY)restrict their performance and potential use,especially in ultraviolet(UV)wavelength light ranges.Quantum dots(QD)derived from 2D materials(2D/QD)provide efficient light absorption and emission of which energy can be tuned for desirable light wavelength.In this study,we greatly enhanced the photon absorption and PLQY of monolayer(1L)tungsten disulfide(WS_(2))in the UV range via hybridization with 2D/QD,particularly titanium nitride MXene QD(Ti_(2)N MQD)and graphitic carbon nitride QD(GCNQD).With the hybridization of MQD or GCNQD,1LWS_(2)showed a maximum PL enhancement by 15 times with 300 nm wavelength excitation,while no noticeable enhancement was observed when the excitation photon energy was less than the bandgap of the QD,indicating that UV absorption by the QD played a crucial role in enhancing the light emission of 1L-WS_(2)in our 0D/2D hybrid system.Our findings present a convenient method for enhancing the photo-response of 1L-WS_(2)to UV light and offer exciting possibilities for harvesting UV energy using 1L-TMD.
文摘The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.
基金funded by Jiangsu Province Six Talent Peaks Project(No.2014-XCL-013)Jiangsu Industrial-academic-research Prospective Joint Project(No.BY2016069-02)the Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions and Top-notch Academic Programs Project of Jiangsu Higher Education Institutions(No.PPZY2015B112)。
文摘The 2 D nanomaterials have achieved the superlubrication property whatever in solid or liquid lubrication in recent years.However,whether or not the nanosheets can stably disperse in oils and smoothly enter into the asperity of friction pairs is crucial for exerting the function of antifriction.The structure of 2 D QDs is desirable for addressing these issues due to its smaller 3 D size.In this study,we developed a facile preparation process for WS_(2) QDs with uniform 2 nm size from nanosheets via hydrothermal-assisted grinding approach.The structure of the as-obtained WS_(2) QDs was determined by a series of characterizations.The results showed that the as-obtained WS_(2) QDs exhibited the typical spectrum features of nanosized quantum dot.The results of the tribological performance in grease verified that the average friction coefficient(ACOFs) and wear volume(AWVs) were decreased by 7.89% and 63.90%relative to grease,respectively,exhibiting a preferable friction reducing and wear resistance.
