Structure,ferroelectric,and enhanced fatigue properties of sol–gel-processed new Bi-based perovskite thin films of Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)

Bi-based perovskite ferroelectric thin films have wide applications in electronic devices due to their excellent ferroelectric properties.New Bi-based perovskite thin films Bi(Cu_(1/2)Ti_(1/2))O_(3)–PbTiO_(3)(BCT–PT) are deposited on Pt(111)/Ti/SiO_(2)/Si substrates in the present study by the traditional sol–gel method.Their structures and related ferroelectric and fatigue characteristics are studied in-depth.The BCT–PT thin films exhibit good crystallization within the phase-pure perovskite structure,besides,they have a predominant(100) orientation together with a dense and homogeneous microstructure.The remnant polarization(2P_(r)) values at 30 μC/cm^(2) and 16 μC/cm^(2) are observed in 0.1BCT–0.9PT and 0.2BCT–0.8PT thin films,respectively.More intriguingly,although the polarization values are not so high,0.2BCT–0.8PT thin films show outstanding polarization fatigue properties,with a high switchable polarization of 93.6% of the starting values after 10^(8) cycles,indicating promising applications in ferroelectric memories.

Enhanced Electrical Properties of Bi_(2−x)Sb_(x)Te_(3) Nanoflake Thin Films Through Interface Engineering

The structure–property relationship at interfaces is difficult to probe for thermoelectric materials with a complex interfacial microstructure.Designing thermoelectric materials with a simple,structurally-uniform interface provides a facile way to understand how these interfaces influence the transport properties.Here,we synthesized Bi_(2−x)Sb_(x)Te_(3)(x=0,0.1,0.2,0.4)nanoflakes using a hydrothermal method,and prepared Bi_(2−x)Sb_(x)Te_(3) thin films with predominantly(0001)interfaces by stacking the nanoflakes through spin coating.The influence of the annealing temperature and Sb content on the(0001)interface structure was systematically investigated at atomic scale using aberration-corrected scanning transmission electron microscopy.Annealing and Sb doping facilitate atom diffusion and migration between adjacent nanoflakes along the(0001)interface.As such it enhances interfacial connectivity and improves the electrical transport properties.Interfac reactions create new interfaces that increase the scattering and the Seebeck coefficient.Due to the simultaneous optimization of electrical conductivity and Seebeck coefficient,the maximum power factor of the Bi_(1.8)Sb_(0.2)Te_(3) nanoflake films reaches 1.72 mW m^(−1)K^(−2),which is 43%higher than that of a pure Bi_(2)Te_(3) thin film.

Target effects on electrical properties and laser induced voltages of La_(0.72)Ca_(0.28)MnO_3 thin films prepared by pulsed laser deposition

La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 （100） single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process.

占空比对脉冲电镀Ni-Co-Al_(2)O_(3)-WS_(2)复合镀层摩擦学性能的影响

为提高CrNi3MoVA钢的耐磨性能,用脉冲电沉积法在CrNi3MoVA钢表面制备了Ni-Co-Al_(2)O_(3)-WS_(2)复合镀层,利用扫描电镜(SEM)和X射线衍射仪(XRD)分析镀层的表面形貌和物相结构,用纳米压痕仪和往复式摩擦磨损试验机测试镀层的纳米力学性能与摩擦学性能。结果表明:Ni-Co-Al_(2)O_(3)-WS_(2)复合镀层表面呈结节状凸起,随着占空比的增加,镀层表面结节密度减少,(111)晶面择优取向更加明显。占空比为0.1的复合镀层拥有最高的硬度7.24GPa,最低的平均摩擦系数0.38和体积磨损率1.52×10^(-4) mm^(3)·(N·m)^(-1)。镀层中的n-Al_(2)O_(3)颗粒会支撑在摩擦面上减少摩擦副间的接触面积,同时与n-WS_(2)颗粒与在剪切作用下脱落形成润滑膜,发挥协同减磨作用提高镀层摩擦学性能。

Intercalating Ultrathin MoO_3 Nanobelts into MXene Film with Ultrahigh Volumetric Capacitance and Excellent Deformation for High-Energy-Density Devices

The restacking hindrance of MXene films restricts their development for high volumetric energy density of flexible supercapacitors toward applications in miniature,portable,wearable or implantable electronic devices.A valid solution is construction of rational heterojunction to achieve a synergistic property enhancement.The introduction of spacers such as graphene,CNTs,cellulose and the like demonstrates limited enhancement in rate capability.The combination of currently reported pseudocapacitive materials and MXene tends to express the potential capacitance of pseudocapacitive materials rather than MXene,leading to low volumetric capacitance.Therefore,it is necessary to exploit more ideal candidate materials to couple with MXene for fully expressing both potentials.Herein,for the first time,high electrochemically active materials of ultrathin MoO3 nanobelts are intercalated into MXene films.In the composites,MoO3 nanobelts not only act as pillaring components to prevent restacking of MXene nanosheets for fully expressing the MXene pseudocapacitance in acidic environment but also provide considerable pseudocapacitive contribution.As a result,the optimal M/MoO3 electrode not only achieves a breakthrough in volumetric capacitance(1817 F cm-3 and 545 F g-1),but also maintains good rate capability and excellent flexibility.Moreover,the corresponding symmetric supercapacitor likewise shows a remarkable energy density of 44.6 Wh L-1(13.4 Wh kg-1),rendering the flexible electrode a promising candidate for application in high-energy-density energy storage devices.

WS_(2)-WO_(3)复合材料光催化降解亚甲基蓝的研究

染料污染物进入水资源系统后,难以被自然降解,危害人体健康。光催化氧化技术由于可直接利用光能、无二次污染、减少能源消耗等特点成为治理废水的有效方法。通过调控合成温度和时间,对比研究不同WS_(2)-WO_(3)复合材料对亚甲基蓝溶液光催化降解的效率。结果显示,400℃煅烧1 h得到的复合材料在降解20 mg/L亚甲基蓝溶液时表现出最佳降解效果,降解速率分别是200℃、300℃、500℃和600℃煅烧1 h所得材料的1.73、1.93、1.79和2.39倍。

Er^(3+) Doped BaTiO_3 Optical-Waveguide Thin Films Elaborated by Sol-Gel Method

Erbium doped BaTiO 3 optical-waveguide films on Pyrex substrate was elaborated successfully through sol-gel method. BaTiO 3 is well crystallized when the film is annealed at 650 ℃ in air circumstance. The so-prepared films with 13 layers have comparatively lower refractive index than bulk BaTiO 3, and it can support two TM and TE modes. Photoluminescence and up-conversion luminescence spectra proved the successful doping of rare earth ions.

Transfer film effects induced by 3D-printed polyether-ether-ketone with excellent tribological properties for joint prosthesis

Based on the building principle of additive manufacturing,printing orientation mainly determines the tribological properties of joint prostheses.In this study,we created a polyether-ether-ketone(PEEK)joint prosthesis using fused filament fabrication and investigated the effects of printing orientation on its tribological properties using a pin-on-plate tribometer in 25% newborn calf serum.An ultrahigh molecular weight polyethylene transfer film is formed on the surface of PEEK due to the mechanical capture of wear debris by the 3D-printed groove morphology,which is significantly impacted by the printing orientation of PEEK.When the printing orientation was parallel to the sliding direction of friction,the number and size of the transfer film increased due to higher steady stress.This transfer film protected the matrix and reduced the friction coefficient and wear rate of friction pairs by 39.13%and 74.33%,respectively.Furthermore,our findings provide a novel perspective regarding the role of printing orientation in designing knee prostheses,facilitating its practical applications.

Preparation of Thin Film Composite Nanofiltration Membrane by Interfacial Polymerization with 3,5-Diaminobenzoylpiperazine and Trimesoyl Chloride

A new aromatic diamine,3,5-diaminobenzoylpiperazine （3,5-DABP）,was synthesized from 3,5-diaminobenzoic acid and 1-formyl piperazine.The structure of 3,5-DABP was identified by FT-IR spectra and 1H NMR spectra.With 3,5-DABP as aqueous monomer and trimesoyl chloride （TMC） as organic monomer,thin film composite （TFC） nanofiltration membranes were prepared by interfacial polymerization technology.The salt rejection order of these TFC membranes is Na2SO4MgSO4MgCl2NaCl.This sequence indicates that the membranes are negatively charged.

电化学沉积WS_(3)薄膜及其忆阻特性研究

对基于二维材料的垂直阵列忆阻器进行了研究。面对二维材料生长窗口狭窄,难以制备大面积单晶等挑战,通过可控电化学沉积沉积了大面积WS_(3)薄膜。基于WS_(3)薄膜制备了垂直阵列结构忆阻器件。对2×2的4个忆阻器单元进行I-V特性扫描,均展现出了双极性忆阻特性。开关寿命达1.5×10^(4)次,对于仿神经训练脉冲信号有着明显的响应。大面积二维材料的制备与稳定的忆阻性能为高集成度忆阻器件提供了关键的电学参数与广阔的应用前景。

Preparation of WO3 thin films by dip film-drawing for photoelectrochemical performance

Here we report the WO3 thin films on F-doped SnO2 conducting glass (FTO) substrates which were prepared by using dip film-drawing method. Dip film-drawing was a simple, convenient, economical method and in largescale to prepare photoanodes for future applications. The FTO substrates were dipped in tungstic acid solution then film-drawn included 3, 6, 9, 12 and 15 times for prepared different thicknesses of WO3 thin film photoanodes. Then the photoa no des were employed as the electrodes in photoelectrochemical property Keywords: WO3 thin films Dip film-drawing Photoelectrochemical Thicknesses Large-scale measurements, which include scan linear sweep, repeated on/off illumination cycles, electrochemical impedanee spectroscopy and incident phot on to current conversion efficiency, respectively. The results showed that the WO3 thin films dipped 9 times with 175 nm thicknesses had the best photoelectrochemical performance of 0.067 mA·cm^-2 at 1.23 V versus RHE.

Correlation between lithium storage and diffusion properties and electrochromic characteristics of WO_3 thin films

As essential electrochromic（EC） materials are related to energy savings in fenestration technology,tungsten oxide（WO3） films have been intensively studied recently.In order to achieve better understanding of the mechanism of EC properties,and thus facilitate optimization of device performance,clarification of the correlation between cation storage and transfer properties and the coloration performance is needed.In this study,transparent polycrystalline and amorphous WO3 thin films were deposited on SnO2：F-coated glass substrates by the pulsed laser deposition technique.Investigation into optical transmittance in a wavelength range of 400-800 nm measured at a current density of 130 μA·cm-2 with the applied potential ranging from 3.2 to 2.2 V indicates that polycrystalline films have a larger optical modulation of ～ 30% at 600 nm and a larger coloration switch time of 95 s in the whole wavelength range compared with amorphous films（～ 24% and 50 s）.Meanwhile,under the same conditions,polycrystalline films show a larger lithium storage capacity corresponding to a Li/W ratio of 0.5,a smaller lithium diffusion coefficient（2×10-12cm2·s-1 for Li/W=0.24） compared with the amorphous ones,which have a Li/W ratio of 0.29 and a coefficient of ～2.5×10-11cm2·s-1 as Li/W=0.24.These results demonstrate that the large optical modulation relates to the large lithium storage capacity,and the fast coloration transition is associated with fast lithium diffusion.

Preparation,Characterization and Photothermal Study of PVA/Ti_(2)O_(3) Composite Films

In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).

Fluorescence Enhancement of Metal-Capped Perovskite CH3NH3PbI3 Thin Films

We fabricate nano-structural metal films to improve photoluminescence of perovskite films. When the perovskite film is placed on an ammonia-treated alumina film, stronger photoluminescence is found due to local field en- hancement effects. In addition, the oxide spacer layer between the metal （e.g., AI, Ag and Au） substrate and the perovskite film plays an important role. The simulations and experiments imply that the enhancement is related to surface plasmons of nano-structural metals.

Interfacial built-in electric field and crosslinking pathways enabling WS_(2)/Ti_(3)C_(2)T_(x) heterojunction with robust sodium storage at low temperature

Developing efficient energy storage for sodium-ion batteries(SIBs)by creating high-performance heterojunctions and understanding their interfacial interaction at the atomic/molecular level holds promise but is also challenging.Besides,sluggish reaction kinetics at low temperatures restrict the operation of SIBs in cold climates.Herein,cross-linking nanoarchitectonics of WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,featuring built-in electric field(BIEF),have been developed,employing as a model to reveal the positive effect of heterojunction design and BIEF for modifying the reaction kinetics and electrochemical activity.Particularly,the theoretical analysis manifests the discrepancy in work functions leads to the electronic flow from the electron-rich Ti_(3)C_(2)T_(x) to layered WS_(2),spontaneously forming the BIEF and“ion reservoir”at the heterogeneous interface.Besides,the generation of cross-linking pathways further promotes the transportation of electrons/ions,which guarantees rapid diffusion kinetics and excellent structure coupling.Consequently,superior sodium storage performance is obtained for the WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,with only 0.2%decay per cycle at 5.0 A g^(-1)(25℃)up to 1000 cycles and a high capacity of 293.5 mA h g^(-1)(0.1A g^(-1)after 100 cycles)even at-20℃.Importantly,the spontaneously formed BIEF,accompanied by“ion reservoir”,in heterojunction provides deep understandings of the correlation between structure fabricated and performance obtained.

Preparation and Characterization of SrTiO_3 Thin Film on Functional Organic Self-Assembled Monolayers

SrTiO3 thin film was successfully prepared on the functionalized organic self-assembled monolayers（SAMs） by the Liquid Phase Deposition（LPD） method.The as-prepared samples were characterized by X-ray diffraction（XRD）,atomic force microscope（AFM）,scanning electron microscopy（SEM） and metallographic microscope.Measurement of contact angle showed that the hydrophobe substrate was changed into hydrophile by UV irradiation.AFM photographs of octadecyl-trichloro-silane self-assembled monolayer（OTS-SAM） surface approved that UV irradiation did change the morphology of OTS monolayer and provided evidence for the conversion of hydrophilic characteristic.Photographs of Metallographic Microscope showed that OTS-SAM had an active effect on the deposition of SrTiO3 thin film.XRD and SEM indicated that the thin film was of pure cubic phase SrTiO3 and composed of nanosized grains with a size in the range of 100-500 nm.The formation mechanism of the SrTiO3 film was proposed.

Facile Synthesis of Nanocrystalline Cr_2O_3 Thin Film

A novel and facile synthesis route for the manufacture of transparent and uniform self-assembled nanocrystalline Cr2O3 （nc-Cr2O3） thin films with different morphology was reported, utilizing chromium nitrate as the inorganic source and triblock copolymer F127 as the morphology-directing agent by the evaporation-induced assembly （EIA） method. X-ray powder diffraction （XRD）, thermogravimetry-differential scanning calorimetry （TG-DSC）, N2-sorption, scanning electron microscopy （SEM） and transmission electron microscopy （TEM） were used to characterize the as-prepared nc-Cr2O3 thin films. The Cr2O3 thin film with different morphology was obtained by changing the relative humidity. The possible formation mechanism of the nc-Cr2O3 thin films with different morphologies was discussed.

Synthesis and Electrical Characterization of BaTiO3 Thin Films on Si(100)

BaTiO3 thin film has been deposited on Si(100) substrate using sol-gel process and deposited by using spin – coating technique. The BaTiO3/Si(100) structures were studied by structural and electrical characteristics. The X-ray diffrac-tion of BaTiO3/Si(100) shows that the diffraction peaks become increasing sharp with increasing calcination tempera-tures indicating the enhance crystallinity of the films. Scanning electron microscopy of BaTiO3 thin films shows the crack free and uniform nature. The capacitance-voltage measurement of BaTiO3 thin film deposited on Si(100) an-nealed at 600℃ shows large frequency dispersion in the accumulation region. The current-voltage measurement of BaTiO3/Si shows the ideality factor was approaches to unity at 600℃.

Preparation and electrical properties of BaPbO_3 thin film

BaPbO3 thin films were deposited on Al2O3 substrates by sol-gel spin-coating and rapid thermal annealing. The microstructure and phase of BaPbO3 thin films were determined by X-ray diffractometry, scanning electrons microscopy and energy dispersive X-ray spectrometry. The influence of annealing temperature and annealing time on sheet resistance of the thin films was investigated. The results show that heat treatment, including annealing temperature and time, causes notable change in molar ratio of Pb to Ba, resulting in the variations of sheet resistance. The variation of electrical properties demonstrates that the surface state of the film changes from two-dimensional behavior to three-dimensional behavior with the increase of film thickness. Crack-free BaPbO3 thin films with grain size of 90 nm can be obtained by a rapid thermal annealing at 700 ℃ for 10 min. And the BaPbO3 films with a thickness of 2.5 μm has a sheet resistance of 35 Ω·-1.

Structural and electrical properties of SrTiO3 thin films as insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures

SrTiOs （STO） thin films were deposited on p-Si（100） substrates at various substrate temperatures from 300℃ to 700℃ by radio frequency （RF） magnetron sputtering technique. Their structure and electrical properties were investigated. It was found that the transition from amorphous phase to polycrystalline phase occurred at the substrate temperatures 300-400℃. Their crystallinity became better when the substrate temperatures further increased. The dielectric and leakage current measurements were carried out by using the Si/STO/Pt metal-insulator-semiconductor （MIS） structures at room temperature. It was found that the fixed charge density decreased and both the interface trap density and the dielectric constant increased when the substrate temperatures were increased. The leakage current mechanisms for STO MIS structures with STO films prepared at 700℃ followed the space charge limited current （SCLC） under the low applied electric field and the Poole-Frenkel emission under the high one. In addition, the resistivity for films prepared at 700℃ was higher than 10^11Ω.cm under the voltage lower than 10V （corresponding to the electric field of 1.54×10^3kV.cm^-1）. It suggested that the STO films prepared at 700℃ were suitable for acting as the insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures.