ZnSb/Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction for flexible near-infrared photodetector arrays

Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography technology.The single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals heterojunction.Thin polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles.Moreover,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.

Two-step growth of β-Ga_(2)O_(3) on c-plane sapphire using MOCVD for solar-blind photodetector

In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.

CuO–TiO_(2) based self-powered broad band photodetector

An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube furnace on a 40 nm TiO_(2)thin film deposited on a p-type Si(100)substrate.The CuO–TiO_(2)/TiO_(2)/p-Si(100)devices exhibited excellent rectification characteristics under dark and individual photoillumination conditions.The devices showed remarkable photo-response under broadband(300–1100 nm)light illumination at zero bias voltage,indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations.The maximum response of the devices is observed at 300 nm for an illumination power of 10 W.The response and recovery times were calculated as 86 ms and 78 ms,respectively.Moreover,under a small bias,the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions.The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices.Under illumination conditions,the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO_(2)/TiO_(2)interface.These characteristics make the CuO–TiO_(2)/TiO_(2)broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.

High responsivity photodetectors based on graphene/WSe_(2) heterostructure by photogating effect

Graphene, with its zero-bandgap electronic structure, is a highly promising ultra-broadband light absorbing material.However, the performance of graphene-based photodetectors is limited by weak absorption efficiency and rapid recombination of photoexcited carriers, leading to poor photodetection performance. Here, inspired by the photogating effect, we demonstrated a highly sensitive photodetector based on graphene/WSe_(2) vertical heterostructure where the WSe_(2) layer acts as both the light absorption layer and the localized grating layer. The graphene conductive channel is induced to produce more carriers by capacitive coupling. Due to the strong light absorption and high external quantum efficiency of multilayer WSe_(2), as well as the high carrier mobility of graphene, a high photocurrent is generated in the vertical heterostructure. As a result, the photodetector exhibits ultra-high responsivity of 3.85×10~4A/W and external quantum efficiency of 1.3 × 10~7%.This finding demonstrates that photogating structures can effectively enhance the sensitivity of graphene-based photodetectors and may have great potential applications in future optoelectronic devices.

Lewis acid-doped transition metal dichalcogenides for ultraviolet–visible photodetectors

Ultraviolet photodetectors(UV PDs)are widely used in civilian,scientific,and military fields due to their high sensitivity and low false alarm rates.We present a temperature-dependent Lewis acid p-type doping method for transition metal dichalcogenides(TMDs),which can effectively be used to extend the optical response range.The p-type doping based on surface charge transfer involves the chemical adsorption of the Lewis acid SnCl_(4)as a light absorption layer on the surface of WS_(2),significantly enhancing its UV photodetection performance.Under 365 nm laser irradiation,WS_(2)PDs exhibit response speed of 24 ms/20 ms,responsivity of 660 mA/W,detectivity of 3.3×10^(11)Jones,and external quantum efficiency of 226%.Moreover,we successfully apply this doping method to other TMDs materials(such as MoS_(2),MoSe_(2),and WSe_(2))and fabricate WS_(2) lateral p–n heterojunction PDs.

Highly Sensitive Photodetectors Based on WS_(2) Quantum Dots/GaAs Heterostructures

The performance of the photodetector is significantly impacted by the inherent surface faults in GaAs nanowires(NWs).We combined three-dimensional(3D)gallium arsenide nanowires with zero-dimensional(0D)WS_(2) quantum dot(QDs)materials in a simple and convenient way to form a heterogeneous structure.Various performance enhancements have been realized through the formation of typeⅡenergy bands in heterostructures,opening up new research directions for the future development of photodetector devices.This work successfully fabricated a high-sensitivity photodetector based on WS_(2)QDs/GaAs NWs heterostructure.Under 660 nm laser excitation,the photodetector exhibits a responsivity of 368.07 A/W,a detectivity of 2.7×10^(12)Jones,an external quantum efficiency of 6.47×10^(2)%,a low-noise equivalent power of 2.27×10^(-17)W·Hz^(-1/2),a response time of 0.3 s,and a recovery time of 2.12 s.This study provides a new solution for the preparation of high-performance GaAs detectors and promotes the development of optoelectronic devices for GaAs NWs.

WSe2纳米结构的合成及减摩性能研究

将W粉和Se粉按一定比例混合,直接密封在石英管中加热或高能球磨、压片,在Ar气氛中加热,得到了不同形貌的WSe2纳米结构.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和透射电子显微镜(TEM、HRTEM)分析了WSe2纳米结构的组成、微观形貌和组织形态;利用UMT-2摩擦试验机考察了WSe2作为HVI500液体基础油添加剂的摩擦磨损性能.研究结果表明:直接密封加热得到的产物为棒状WSe2纳米材料,最小棒直径为6 nm;球磨、压片后加热得到WSe2纳米颗粒,颗粒的平均尺寸在50 nm以下,二者都具有层状结构和良好的结晶性.添加质量分数5%的WSe2纳米材料作为基础油添加剂能够显著降低摩擦系数,减少磨损,增强了材料抗疲劳磨损能力.

单层WSe2、MoSe2激子发光的压力诱导K-Λ交互转变

采用机械剥离法在金刚石对顶砧中制备了单层WSe_2和MoSe_2样品,利用高压微区荧光光谱测量技术,在氩传压介质环境下对其激子发光行为进行了高压调控研究。其中单层WSe_2的中性和负电激子演化趋势在2. 43 GPa处出现拐点,单层MoSe_2中性激子发光在3. 7 GPa处发生了劈裂。结合第一性原理计算分析,确认该不连续现象的产生机制为压力诱导的导带底K-Λ交互转变。该结果可以扩大至整个二维层状材料体系,为发展激子器件垫定基础。

单层与双层WSe2纳米片层的光致发光

采用气相沉积法制备了WSe2二维纳米材料,对其低温光致发光谱进行了研究。结果表明:随着WSe2层数的增加,其光致发光强度单调下降;当WSe2层数从单层增加为双层时,其发光强度急剧下降,表明其能带结构已从直接带隙转变为间接带隙。进一步研究了双层WSe2的变温光致发光谱,发现随着温度的升高,双层WSe2发光峰中A峰峰位的变化基本符合半导体带隙的温度变化规律,而I峰峰位红移与温度基本成线性关系,表明双层WSe2同时存在间接和直接跃迁,且直接跃迁和间接跃迁特性不同。

稀土元素Er掺杂提高WSe2纳米薄膜的光电特性

采用热蒸发法在Si片上沉积稀土元素Er掺杂的WSe2薄膜,研究了Er^3+掺杂对WSe2薄膜表面形貌、晶体结构﹑光致发光光谱、光吸收特性和电学特性的影响。研究发现薄膜在(004)晶面呈柱状择优生长,Er^3+掺杂不仅没有改变WSe2的晶体结构,还使薄膜结晶性显著增强,提高了光吸收特性,明显增加了光致发光强度。同时发现Er^3+掺杂WSe2薄膜的电子迁移率为未掺杂的4倍多。当光照强度由0增加到25 mW/cm^2时,Er^3+掺杂的WSe2/Si异质结的Ⅰ-Ⅴ曲线由整流特性逐步变成线性,相同偏压下光电流增加了约3倍,并且光电导灵敏度也明显增加。随着加热温度的升高,电导显著增大,电阻表现负温度系数。表明WSe2/Si异质结对温度和光强具有非常高的灵敏度,在高效率的温度传感器和光电探测器等方面有良好的应用前景。

Room-temperature sputtered electrocatalyst WSe2 nanomaterials for hydrogen evolution reaction

The low-temperature physical vapor deposition process of atomically thin two-dimensional transition metal dichalcogenide(2D TMD) has been gaining attention owing to the cost-effective production of diverse electrochemical catalysts for hydrogen evolution reaction(HER) applications. We, herein, propose a simple route toward the cost-effective physical vapor deposition process of 2D WSe2 layered nanofilms as HER electrochemical catalysts using RF magnetron sputtering at room temperature(<27℃). By controlling the variable sputtering parameters, such as RF power and deposition time, the loading amount and electrochemical surface area(ECSA) of WSe2 films deposited on carbon paper can be carefully determined. The surface of the sputtered WSe2 films are partially oxidized, which may cause spherical-shaped particles. Regardless of the loading amount of WSe2, Tafel slopes of WSe2 electrodes in the HER test are narrowly distributed to be ~120–138 mV dec-1, which indicates the excellent reproducibility of intrinsic catalytic activity. By considering the trade-off between the loading amount and ECSA, the best HER performance is clearly observed in the 200 W-15 min sample with an overpotential of 220 mV at a current density of 10 mA cm-2. Such a simple sputtering method at low temperature can be easily expanded to other 2D TMD electrochemical catalysts, promising potentially practical electrocatalysts.

固相烧结合成WSe2纳米棒的微观形貌及摩擦学性能

将钨粉和硒粉按物质的量比为1∶2.2混合并球磨后,再在600~800℃进行固相烧结合成了纳米WSe2,对其微观形貌进行表征;然后将在600℃合成的WSe2纳米棒作为润滑油添加剂加入到HVI500基础油中,研究了它的摩擦学性能。结果表明：在700,800℃合成的纳米WSe2为片状,在600℃合成的纳米WSe2为棒状,该纳米棒的直径约为500nm,长约为800nm;与HVI500基础油相比,2%WSe2纳米棒＋HVI500基础油的摩擦因数约降低了40%,具有较好的减摩作用。

Enhanced photoresponse performance in Ga/Ga_2O_3 nanocomposite solar-blind ultraviolet photodetectors

In the present work, we explore the solar-blind ultraviolet（UV） photodetectors（PDs） with enhanced photoresponse,fabricated on Ga/Ga2O3 nanocomposite films. Through pre-burying metal Ga layers and thermally post-annealing the laminated Ga2 O3/Ga/Ga2O3 structures, Ga/Ga2O3 nanocomposite films incorporated with Ga nanospheres are obtained. For the prototype PD, it is found that the photocurrent and photoresponsivity will first increase and then decrease monotonically with the thickness of the pre-buried Ga layer increasing. Each of all PDs shows a spectrum response peak at 260 nm, demonstrating the ability to detect solar-blind UV light. Adjustable photoresponse enhancement factors are achieved by means of the surface plasmon in the nanocomposite films. The PD with a 20 nm thick Ga interlayer exhibits the best solar-blind UV photoresponse characteristics with an extremely low dark current of 8.52 p A at 10-V bias, a very high light-to-dark ratio of ～ 8 × 10~5, a large photoresponsivity of 2.85 A/W at 15-V bias, and a maximum enhancement factor of ～ 220. Our research provides a simple and practical route to high performance solar-blind UV PDs and potential applications in the field of optoelectronics.

Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga_(2)O_(3)

Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.

Single photon-chiral phonon entanglement in monolayer WSe2

Entanglement is a defining feature of quantum physics with no classical analog. On the one hand, it is a powerful concept used in the fundamental study of quantum systems, many-body physics and even black hole physics. On the other hand, it is a key resource in quantum communication and information processing. Entanglement has been realized between photons[1], ions[2], spins[3], quantum dots[4] and even larger objects such as macroscopic diamonds[5]. Entanglement involving macroscopic objects is particularly intriguing and holds promise for novel quantum technologies. In a recent paper[6] published in Nature Physics, Srivastava and coworkers have unveiled an intriguing entanglement between collective and macroscopic vibration involving billions of atoms of the crystal (phonon) and a single optical excitation of a quantum dot (QD) in monolayer WSe2 (Fig. 1(a)). This is the first report on single photon entangled with phonon.

尺寸效应对MoS2/WSe2范德华异质结构层间与俄歇复合的界面调控

为探索界面工程对二维材料范德华异质结构中载流子复合率的影响,本工作基于界面键弛豫理论和费米黄金定则,建立了范德华异质结俄歇和层间复合率与各结构组元尺寸之间的理论模型。结果表明,MoS2/WSe2异质结的俄歇复合寿命随着组元尺寸的增大而增加,且异质结的俄歇复合率远小于相应的单组元体系。在MoS2/WSe2双层异质结中引入薄h-BN插层后,体系的层间复合率和俄歇复合率随h-BN厚度的增加而分别呈现减小和增大的趋势;在组元处于单层MoS2和WSe2情况下,当界面插层h-BN厚度达到9.1 nm时,俄歇复合率将趋于5.3 ns^-1。该研究结果为二维过渡金属硫族化合物基异质结光电器件的优化设计提供了一种理论依据。

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.

A self-powered ultraviolet photodetector based on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction with low noise and stable photoresponse

A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)film.The results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV light.Moreover,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and voltages.At zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,respectively.In general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

First-principles analysis of phonon thermal transport properties of two-dimensional WS2/WSe2 heterostructures

The van der Waals(vdW)heterostructures of bilayer transition metal dichalcogenide obtained by vertically stacking have drawn increasing attention for their enormous potential applications in semiconductors and insulators.Here,by using the first-principles calculations and the phonon Boltzmann transport equation(BTE),we studied the phonon transport properties of WS2/WSe2 bilayer heterostructures(WS2/WSe2-BHs).The lattice thermal conductivity of the ideal WS2/WSe2-BHs crystals at room temperature(RT)was 62.98 W/mK,which was clearly lower than the average lattice thermal conductivity of WS2 and WSe2 single layers.Another interesting finding is that the optical branches below 4.73 THz and acoustic branches have powerful coupling,mainly dominating the lattice thermal conductivity.Further,we also noticed that the phonon mean free path(MFP)of the WS2/WSe2-BHs(233 nm)was remarkably attenuated by the free-standing monolayer WS2(526 nm)and WSe2(1720 nm),leading to a small significant size effect of the WS2/WSe2-BHs.Our results systematically demonstrate the low optical and acoustic phonon modes-dominated phonon thermal transport in heterostructures and give a few important guidelines for the synthesis of van der Waals heterostructures with excellent phonon transport properties.

High performance Cu2O film/ZnO nanowires self-powered photodetector by electrochemical deposition

Self-powered photodetectors based on nanomaterials have attracted lots of attention for several years due to their various advantages.In this paper,we report a high performance Cu2O/ZnO self-powered photodetector fabricated by using electrochemical deposition.ZnO nanowires arrays grown on indium-tin-oxide glass are immersed in Cu2O film to construct type-Ⅱband structure.The Cu2O/ZnO photodetector exhibits a responsivity of 0.288 mA/W at 596 nm without bias.Compared with Cu2O photoconductive detector,the responsivity of the Cu2O/ZnO self-powered photodetector is enhanced by about two times at 2 V bias.It is attributed to the high power conversion efficiency and the efficient separation of the photogenerated electron-hole pairs,which are provided by the heterojunction.The outstanding comprehensive performances make the Cu2O film/ZnO nanowires self-powered photodetector have great potential applications.