Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied dur...Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxidation,decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique （DECT）. The cleaning effects of DECT were compared with the RCA cleaning technique, including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique.展开更多
For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respecti...For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respectively.Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity（WIWNU） and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.展开更多
文摘Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxidation,decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique （DECT）. The cleaning effects of DECT were compared with the RCA cleaning technique, including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique.
基金Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan,China(No.2009ZX02308)the Hebei Natural Science Foundation of China(No.E2013202247)the Natural Science Foundation of Hebei Province,China(No.E2014202147)
文摘For improving the polishing performance, in this article, the roles of a nonionic surfactant（Fatty alcohol polyoxyethylene ether） and H2O2 were investigated in the chemical mechanical planarization process, respectively.Firstly, the effects of the nonionic surfactant on the within-wafer non-uniformity（WIWNU） and the surface roughness were mainly analyzed. In addition, the passivation ability of the slurry, which had no addition of BTA, was also discussed from the viewpoint of the static etch rate, electrochemical curve and residual step height under different concentrations of H2O2. The experimental results distinctly revealed that the nonionic surfactant introduced in the slurry improved the WIWNU and surface roughness, and that a 2 vol% was considered as an appropriate concentration relatively. When the concentration of H2O2 surpasses 3 vol%, the slurry will possess a relatively preferable passivation ability, which can effectively decrease the step height and contribute to acquiring a flat and smooth surface. Hence, based on the result of these experiments, the influences of the nonionic surfactant and H2O2 are further understood, which means the properties of slurry can be improved.
